Pagina 156 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  156/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot SI4816DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.3A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W, 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione147.948
Logic Level Gate
30V
5.3A, 7.7A
22 mOhm @ 6.3A, 10V
2V @ 250µA
12nC @ 5V
-
1W, 1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI6969DQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione72.000
Logic Level Gate
12V
-
34 mOhm @ 4.6A, 4.5V
450mV @ 250µA (Min)
40nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MP6K31TR
Rohm Semiconductor

MOSFET 2N-CH 60V 2A MPT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: MPT6
pacchetto: 6-SMD, Flat Leads
Azione7.808
Logic Level Gate
60V
2A
290 mOhm @ 2A, 10V
2.5V @ 1mA
2nC @ 5V
110pF @ 10V
2W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
MPT6
hot CSD75205W1015
Texas Instruments

MOSFET 2P-CH 20V 1.2A 6DSBGA

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V
  • Power - Max: 750mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFBGA, DSBGA
  • Supplier Device Package: 6-DSBGA (1x1.5)
pacchetto: 6-UFBGA, DSBGA
Azione17.808
Logic Level Gate
20V
1.2A
120 mOhm @ 1A, 4.5V
850mV @ 250µA
2.2nC @ 4.5V
265pF @ 10V
750mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFBGA, DSBGA
6-DSBGA (1x1.5)
TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
pacchetto: 8-SOIC (0.173", 4.40mm Width)
Azione2.704
Logic Level Gate
20V
6A
20 mOhm @ 4.8A, 4V
1.2V @ 200µA
22nC @ 5V
2010pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
hot MMDF2N02ER2
ON Semiconductor

MOSFET 2N-CH 25V 3.6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione884.412
Logic Level Gate
25V
3.6A
100 mOhm @ 2.2A, 10V
3V @ 250µA
30nC @ 10V
532pF @ 16V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRF7316PBF
Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.696
Logic Level Gate
30V
4.9A
58 mOhm @ 4.9A, 10V
1V @ 250µA
34nC @ 10V
710pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD110808PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
  • Vgs(th) (Max) @ Id: 820mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
pacchetto: 16-DIP (0.300", 7.62mm)
Azione6.880
Standard
10.6V
12mA, 3mA
500 Ohm @ 4.8V
820mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
DMN63D8LDW-13
Diodes Incorporated

MOSFET 2N-CH 30V 0.22A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione6.384
Logic Level Gate
30V
220mA
2.8 Ohm @ 250mA, 10V
1.5V @ 250µA
870nC @ 10V
22pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
CSD87334Q3DT
Texas Instruments

MOSFET 2N-CH 30V 20A 8SON

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
  • Power - Max: 6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-VSON (3.3x3.3)
pacchetto: 8-PowerTDFN
Azione5.600
Standard
30V
-
6 mOhm @ 12A, 8V
1.2V @ 250µA
8.3nC @ 4.5V
1260pF @ 15V
6W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-VSON (3.3x3.3)
SI7540DP-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 12V 7.6A PPAK SO-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione4.432
Logic Level Gate
12V
7.6A, 5.7A
17 mOhm @ 11.8A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot CSD87352Q5D
Texas Instruments

MOSFET 2N-CH 30V 25A 8SON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
  • Power - Max: 8.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: 8-LSON (5x6)
pacchetto: 8-PowerLDFN
Azione29.172
Logic Level Gate
30V
25A
-
1.15V @ 250µA
12.5nC @ 4.5V
1800pF @ 15V
8.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
8-LSON (5x6)
hot SIZ300DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 11A POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A, 28A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
  • Power - Max: 16.7W, 31W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair?
pacchetto: 8-PowerWDFN
Azione15.360
Logic Level Gate
30V
11A, 28A
24 mOhm @ 9.8A, 10V
2.4V @ 250µA
12nC @ 10V
400pF @ 15V
16.7W, 31W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair?
ALD111933SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.9V
  • Vgs(th) (Max) @ Id: 3.35V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione13.740
Standard
10.6V
-
500 Ohm @ 5.9V
3.35V @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot FDMS3602AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 15A/26A POWER56

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15A, 26A
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V
  • Power - Max: 2.2W, 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
pacchetto: 8-PowerTDFN
Azione48.240
Logic Level Gate
25V
15A, 26A
5.6 mOhm @ 15A, 10V
3V @ 250µA
27nC @ 10V
1770pF @ 13V
2.2W, 2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
hot SI9933CDY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 4A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione62.304
Logic Level Gate
20V
4A
58 mOhm @ 4.8A, 4.5V
1.4V @ 250µA
26nC @ 10V
665pF @ 10V
3.1W
-50°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
TT8J13TCR
Rohm Semiconductor

MOSFET 2P-CH 12V 2.5A TSST8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
pacchetto: 8-SMD, Flat Lead
Azione4.672
Logic Level Gate, 1.5V Drive
12V
2.5A
62 mOhm @ 2.5A, 4.5V
1V @ 1mA
16nC @ 4.5V
2000pF @ 6V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
hot SI7998DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 25A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A, 30A
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
  • Power - Max: 22W, 40W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione6.108
Logic Level Gate
30V
25A, 30A
9.3 mOhm @ 15A, 10V
2.5V @ 250µA
26nC @ 10V
1100pF @ 15V
22W, 40W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
BUK9K134-100EX
Nexperia USA Inc.

MOSFET 2N-CH 100V 8.5A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A
  • Rds On (Max) @ Id, Vgs: 159 mOhm @ 5A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
  • Power - Max: 32W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: SOT-1205, 8-LFPAK56
Azione25.836
Logic Level Gate
100V
8.5A
159 mOhm @ 5A, 5V
2.1V @ 1mA
7.4nC @ 5V
755pF @ 25V
32W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot PHC2300,118
Nexperia USA Inc.

MOSFET N/P-CH 300V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 340mA, 235mA
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 102pF @ 50V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione15.012
Logic Level Gate
300V
340mA, 235mA
6 Ohm @ 170mA, 10V
2V @ 1mA
6.24nC @ 10V
102pF @ 50V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IPG20N04S4L18AATMA1
Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V
  • Power - Max: 26W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
pacchetto: -
Azione14.310
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40V
20A (Tc)
18mOhm @ 17A, 10V
2.2V @ 8µA
15nC @ 10V
1071pF @ 25V
26W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PG-TDSON-8-10
SH8KA4TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 9A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione7.245
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30V
9A (Ta)
21.4mOhm @ 9A, 10V
2.5V @ 1mA
15.5nC @ 10V
640pF @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FDD8424H-F085A
onsemi

MOSFET N/P-CH 40V 9A/6.5A TO252

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252 (DPAK)
pacchetto: -
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Logic Level Gate
40V
9A, 6.5A
24mOhm @ 9A, 10V
3V @ 250µA
20nC @ 10V
1000pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
TO-252 (DPAK)
NVMJD7D4N04CLTWG
onsemi

MOSFET N-CH 40V LFPAK56

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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SIZ346DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 17A/30A 8PWR33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
  • Power - Max: 16W, 16.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
pacchetto: -
Azione11.772
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30V
17A (Tc), 30A (Tc)
28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
2.2V @ 250µA, 2.4V @ 250µA
5nC @ 4.5V, 9nC @ 4.5V
325pF @ 15V, 650pF @ 15V
16W, 16.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
ECH8654-TL-HX
onsemi

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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BUK9MHH-65PNN-518
Nexperia USA Inc.

MOSFET 2N-CH 65V 15A 20SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 65V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V
  • Power - Max: 5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
pacchetto: -
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Logic Level Gate
65V
15A (Tc)
10.6mOhm @ 10A, 10V
2V @ 1mA
44.6nC @ 5V
3643pF @ 25V
5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SO
FDS8958A-F085
onsemi

MOSFET N/P-CH 30V 7A/5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5A
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
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Logic Level Gate
30V
7A, 5A
28mOhm @ 7A, 10V
3V @ 250µA
16nC @ 10V
575pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC