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A team from the Massachusetts Institute of Technology (MIT) has successfully developed a novel nanometer-scale 3D transistor using ultra-thin semiconductor materials. This transistor is the smallest 3D transistor known to date, with performance and functionality that can match or even exceed current silicon-based transistors. It is expected to open new pathways for the development of high-performance, energy-efficient electronic products. The related paper was published in the Nature Electronics journal on the 5th.

Scientists at the Korea Institute of Materials Science have developed an ultra-thin composite film capable of absorbing over 99% of electromagnetic waves across various frequencies, including 5G, 6G, WiFi, and radar for autonomous vehicles, which could significantly enhance the reliability of wireless communication. The findings were published in Advanced Functional Materials.

On October 22, the Semiconductor Industry Association (SEMI) released its 2024 silicon shipment forecast report in California. The report predicts that after a significant decline of 14.3% in 2023, global silicon wafer shipments will experience a smaller year-on-year drop of 2.4% in 2024.

Developers now have access to enhanced storage and advanced functionalities with the STM32C0 microcontroller (MCU), enabling more sophisticated capabilities in resource-constrained and cost-sensitive embedded applications.

STMicroelectronics has introduced its new Page EEPROM, which combines the energy efficiency and durability of EEPROM technology with the storage capacity and read/write speed of flash memory. This hybrid memory solution is ideal for applications that face extreme space and power constraints, providing embedded systems with storage options that meet rising demands for both capacity and performance.

X-FAB Silicon Foundries (“X-FAB”), a globally recognized leader in analog/mixed-signal semiconductor foundries, today announced the release of four new high-performance photodiodes on its 180nm CMOS process platform, XS018, which is specially optimized for optical sensor applications. This addition expands the options available for photodetectors and strengthens X-FAB's already extensive product portfolio.

Bourns, Inc., a globally recognized manufacturer of power, protection, and sensing solutions, has introduced the SA2-A Series high-voltage Gas Discharge Tube (GDT). As the latest addition to Bourns' extensive AEC-Q200 compliant product lineup, the SA2-A Series is specifically engineered to meet the stringent requirements of harsh environments, ensuring exceptional reliability, durability, and regulatory compliance.

The gate driver power supplies for Silicon Carbide (SiC) and Gallium Nitride (GaN) devices must meet the unique biasing requirements of these wide-bandgap semiconductors. This article discusses the key factors to consider when designing gate driver power supplies for SiC and GaN applications.

STMicroelectronics has announced that its STSAFE-TPM Trusted Platform Module (TPM) has achieved FIPS 140-3 certification, making it one of the first standardized cryptographic modules on the market to receive this certification.

Silicon Carbide (SiC) is revolutionizing the power electronics field by delivering exceptional efficiency, increased power density, and improved thermal performance, especially in automotive applications such as main drives, onboard chargers, and battery charging stations.