Pagina 153 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7555TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 4.3A MICRO8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Azione523.824	Logic Level Gate	20V	4.3A	55 mOhm @ 4.3A, 4.5V	1.2V @ 250µA	15nC @ 5V	1066pF @ 10V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
IRF9910TR	Infineon Technologies	MOSFET 2N-CH 20V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A, 12A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione5.296	Logic Level Gate	20V	10A, 12A	13.4 mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	900pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ECH8651R-R-TL-H	ON Semiconductor	MOSFET 2N-CH 24V 10A ECH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	pacchetto: 8-SMD, Flat Lead	Azione5.408	-	-	-	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	8-ECH
SI1903DL-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 0.41A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 410mA Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione482.988	Logic Level Gate	20V	410mA	995 mOhm @ 410mA, 4.5V	1.5V @ 250µA	1.8nC @ 4.5V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
FDZ2553N	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 9.6A BGA FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.6A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1299pF @ 10V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 18-WFBGA Supplier Device Package: 18-BGA (2.5x4)	pacchetto: 18-WFBGA	Azione4.848	Logic Level Gate	20V	9.6A	14 mOhm @ 9.6A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1299pF @ 10V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	18-WFBGA	18-BGA (2.5x4)
APTC90AM60SCTG	Microsemi Corporation	MOSFET 2N-CH 900V 59A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione7.648	Super Junction	900V	59A	60 mOhm @ 52A, 10V	3.5V @ 6mA	540nC @ 10V	13600pF @ 100V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM10DHM05G	Microsemi Corporation	MOSFET 2N-CH 100V 278A SP6 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 278A Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione3.088	Standard	100V	278A	5 mOhm @ 125A, 10V	4V @ 5mA	700nC @ 10V	20000pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
SLA5065 LF830	Sanken	MOSFET 4N-CH 60V 7A 15-SIP FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Power - Max: 4.8W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 15-SIP Supplier Device Package: 15-SIP	pacchetto: 15-SIP	Azione4.944	Standard	60V	7A	100 mOhm @ 3.5A, 10V	2V @ 250µA	-	660pF @ 10V	4.8W	150°C (TJ)	Through Hole	15-SIP	15-SIP
SI4936CDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione508.092	Logic Level Gate	30V	5.8A	40 mOhm @ 5A, 10V	3V @ 250µA	9nC @ 10V	325pF @ 15V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTLUD4C26NTBG	ON Semiconductor	MOSFET 2N-CH 30V 9.1A 6UDFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 2.63W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	pacchetto: 6-UDFN Exposed Pad	Azione2.736	Standard	30V	9.1A (Ta)	21 mOhm @ 6A, 10V	1.1V @ 250µA	9nC @ 4.5V	460pF @ 15V	2.63W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-UDFN (2x2)
EMH2417R-TL-H	ON Semiconductor	MOSFET 2N-CH 12V 11A EMH8 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-383FL, EMH8	pacchetto: 8-SMD, Flat Lead	Azione7.424	Logic Level Gate, 2.5V Drive	12V	11A	10 mOhm @ 5A, 4.5V	1.3V @ 1mA	16nC @ 4.5V	-	1.3W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-383FL, EMH8
BUK9K6R8-40EX	Nexperia USA Inc.	MOSFET 2N-CH 40V 40A 56LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power - Max: 64W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	pacchetto: SOT-1205, 8-LFPAK56	Azione7.664	Logic Level Gate	40V	40A	6.1 mOhm @ 10A, 10V	2.1V @ 1mA	22.2nC @ 5V	3000pF @ 25V	64W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
AON7810	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 6A 8DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 14 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (3x3)	pacchetto: 8-PowerSMD, Flat Leads	Azione60.000	Logic Level Gate	30V	6A	14 mOhm @ 6A, 10V	2.3V @ 250µA	12.2nC @ 10V	542pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (3x3)
APTMC120TAM33CTPAG	Microsemi Corporation	MOSFET 6N-CH 1200V 78A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 2.2V @ 3mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 148nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 1000V Power - Max: 370W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione7.152	Standard	1200V (1.2kV)	78A	33 mOhm @ 60A, 20V	2.2V @ 3mA (Typ)	148nC @ 20V	2850pF @ 1000V	370W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
NX138BKSX	Nexperia USA Inc.	NX138BKS/SC-88/REEL 7" Q1/T1 * FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione3.568	Standard	60V	210mA (Ta)	3.5 Ohm @ 200mA, 10V	1.5V @ 250µA	0.7nC @ 10V	20pF @ 30V	320mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
UM6K33NTN	Rohm Semiconductor	MOSFET 2N-CH 50V 0.2A UMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione5.504	Logic Level Gate, 1.2V Drive	50V	200mA	2.2 Ohm @ 200mA, 4.5V	1V @ 1mA	-	25pF @ 10V	120mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
DMN2004DMK-7	Diodes Incorporated	MOSFET 2N-CH 20V 0.54A SOT-26 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 225mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	pacchetto: SOT-23-6	Azione1.473.516	Logic Level Gate	20V	540mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	-	150pF @ 16V	225mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
NDC7002N	Fairchild/ON Semiconductor	MOSFET 2N-CH 50V 0.51A SSOT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 510mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione2.258.820	Logic Level Gate	50V	510mA	2 Ohm @ 510mA, 10V	2.5V @ 250µA	1nC @ 10V	20pF @ 25V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
SP8M21FRATB	Rohm Semiconductor	MOSFET N/P-CH 45V 6A/4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V Power - Max: 2W Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Azione7.500	-	45V	6A (Ta), 4A (Ta)	25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V	2.5V @ 1mA	21.6nC @ 5V, 28nC @ 5V	1400pF @ 10V, 2400pF @ 10V	2W	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSFQ3712	Good-Ark Semiconductor	MOSFET N/P-CH 30V 8A/5.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V Power - Max: 2.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Azione8.793	-	30V	8A (Tc), 5.5A (Tc)	20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V	2.5V @ 250µA	6nC @ 4.5V, 7nC @ 4.5V	500pF @ 25V, 810pF @ 15V	2.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ECH8601R-TL-EX	onsemi	NCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN61D9UDWQ-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.318A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 318mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Azione8.712	-	60V	318mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.6nC @ 4.5V	39pF @ 30V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN62D4LDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 0.261A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	60V	261mA (Ta)	3Ohm @ 200mA, 10V	2V @ 250µA	1.04nC @ 10V	41pF @ 30V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PJT7808_R2_00001	EMO Inc.	MOSFET 2N-CH 20V 0.5A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V	900mV @ 250µA	1.4nC @ 4.5V	67pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
UPA677TB-T1-A	Renesas Electronics Corporation	MOSFET 2N-CH 20V 0.35A SC-88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 570mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 10V Power - Max: 200mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88	pacchetto: -	Request a Quote	Logic Level Gate	20V	350mA	570mOhm @ 300mA, 4.5V	-	-	28pF @ 10V	200mW	-	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88
NP29N06QDK-E1-AY	Renesas Electronics Corporation	MOSFET 2N-CH 60V 30A 8HSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power - Max: 1W (Ta), 44W (Tc) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-HSON (5x5.4)	pacchetto: -	Azione14.820	-	60V	30A (Ta)	20mOhm @ 15A, 10V	2.5V @ 250µA	24nC @ 10V	1500pF @ 25V	1W (Ta), 44W (Tc)	175°C	Surface Mount	8-PowerLDFN	8-HSON (5x5.4)
DMC3401LDW-13	Diodes Incorporated	MOSFET N/P-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, 800pC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, 19pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Azione59.325	-	30V	800mA (Ta), 550mA (Ta)	400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V	1.6V @ 250µA, 2.6V @ 250µA	1.2nC @ 10V, 800pC @ 10V	50pF @ 15V, 19pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
FDC6308P	Fairchild Semiconductor	MOSFET 2P-CH 20V 1.7A SSOT6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT™-6	pacchetto: -	Request a Quote	-	20V	1.7A (Ta)	180mOhm @ 1.7A, 4.5V	1.5V @ 250µA	5nC @ 4.5V	265pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT™-6

IRF7555TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 4.3A MICRO8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Azione523.824

Logic Level Gate

20V

4.3A

55 mOhm @ 4.3A, 4.5V

1.2V @ 250µA

15nC @ 5V

1066pF @ 10V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

IRF9910TR

Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione5.296

Logic Level Gate

20V

10A, 12A

13.4 mOhm @ 10A, 10V

2.55V @ 250µA

11nC @ 4.5V

900pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ECH8651R-R-TL-H

ON Semiconductor

MOSFET 2N-CH 24V 10A ECH8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

pacchetto: 8-SMD, Flat Lead

Azione5.408

-

Surface Mount

8-SMD, Flat Lead

8-ECH

SI1903DL-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 0.41A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 410mA
Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione482.988

Logic Level Gate

20V

410mA

995 mOhm @ 410mA, 4.5V

1.5V @ 250µA

1.8nC @ 4.5V

-

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

FDZ2553N

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.6A BGA

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.6A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1299pF @ 10V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-WFBGA
Supplier Device Package: 18-BGA (2.5x4)

pacchetto: 18-WFBGA

Azione4.848

Logic Level Gate

20V

9.6A

14 mOhm @ 9.6A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

1299pF @ 10V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

18-WFBGA

18-BGA (2.5x4)

APTC90AM60SCTG

Microsemi Corporation

MOSFET 2N-CH 900V 59A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione7.648

Super Junction

900V

59A

60 mOhm @ 52A, 10V

3.5V @ 6mA

540nC @ 10V

13600pF @ 100V

462W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTM10DHM05G

Microsemi Corporation

MOSFET 2N-CH 100V 278A SP6

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 278A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione3.088

Standard

100V

278A

5 mOhm @ 125A, 10V

4V @ 5mA

700nC @ 10V

20000pF @ 25V

780W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SLA5065 LF830

Sanken

MOSFET 4N-CH 60V 7A 15-SIP

FET Type: 4 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Power - Max: 4.8W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 15-SIP
Supplier Device Package: 15-SIP

pacchetto: 15-SIP

Azione4.944

Standard

60V

7A

100 mOhm @ 3.5A, 10V

2V @ 250µA

-

660pF @ 10V

4.8W

150°C (TJ)

Through Hole

15-SIP

SI4936CDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione508.092

Logic Level Gate

30V

5.8A

40 mOhm @ 5A, 10V

3V @ 250µA

9nC @ 10V

325pF @ 15V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTLUD4C26NTBG

ON Semiconductor

MOSFET 2N-CH 30V 9.1A 6UDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power - Max: 2.63W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-UDFN (2x2)

pacchetto: 6-UDFN Exposed Pad

Azione2.736

Standard

30V

9.1A (Ta)

21 mOhm @ 6A, 10V

1.1V @ 250µA

9nC @ 4.5V

460pF @ 15V

2.63W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-UDFN (2x2)

EMH2417R-TL-H

ON Semiconductor

MOSFET 2N-CH 12V 11A EMH8

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-383FL, EMH8

pacchetto: 8-SMD, Flat Lead

Azione7.424

Logic Level Gate, 2.5V Drive

12V

11A

10 mOhm @ 5A, 4.5V

1.3V @ 1mA

16nC @ 4.5V

-

1.3W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-383FL, EMH8

BUK9K6R8-40EX

Nexperia USA Inc.

MOSFET 2N-CH 40V 40A 56LFPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

pacchetto: SOT-1205, 8-LFPAK56

Azione7.664

Logic Level Gate

40V

40A

6.1 mOhm @ 10A, 10V

2.1V @ 1mA

22.2nC @ 5V

3000pF @ 25V

64W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

AON7810

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6A 8DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (3x3)

pacchetto: 8-PowerSMD, Flat Leads

Azione60.000

Logic Level Gate

30V

6A

14 mOhm @ 6A, 10V

2.3V @ 250µA

12.2nC @ 10V

542pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (3x3)

APTMC120TAM33CTPAG

Microsemi Corporation

MOSFET 6N-CH 1200V 78A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 3mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 148nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 1000V
Power - Max: 370W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione7.152

Standard

1200V (1.2kV)

78A

33 mOhm @ 60A, 20V

2.2V @ 3mA (Typ)

148nC @ 20V

2850pF @ 1000V

370W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

NX138BKSX

Nexperia USA Inc.

NX138BKS/SC-88/REEL 7" Q1/T1 *

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione3.568

Standard

60V

210mA (Ta)

3.5 Ohm @ 200mA, 10V

1.5V @ 250µA

0.7nC @ 10V

20pF @ 30V

320mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

UM6K33NTN

Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A UMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione5.504

Logic Level Gate, 1.2V Drive

50V

200mA

2.2 Ohm @ 200mA, 4.5V

1V @ 1mA

-

25pF @ 10V

120mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

DMN2004DMK-7

Diodes Incorporated

MOSFET 2N-CH 20V 0.54A SOT-26

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Power - Max: 225mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

pacchetto: SOT-23-6

Azione1.473.516

Logic Level Gate

20V

540mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

-

150pF @ 16V

225mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

NDC7002N

Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 0.51A SSOT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 510mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione2.258.820

Logic Level Gate

50V

510mA

2 Ohm @ 510mA, 10V

2.5V @ 250µA

1nC @ 10V

20pF @ 25V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

SP8M21FRATB

Rohm Semiconductor

MOSFET N/P-CH 45V 6A/4A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: -

Azione7.500

-

45V

6A (Ta), 4A (Ta)

25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V

2.5V @ 1mA

21.6nC @ 5V, 28nC @ 5V

1400pF @ 10V, 2400pF @ 10V

2W

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SSFQ3712

Good-Ark Semiconductor

MOSFET N/P-CH 30V 8A/5.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V
Power - Max: 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: -

Azione8.793

-

30V

8A (Tc), 5.5A (Tc)

20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V

2.5V @ 250µA

6nC @ 4.5V, 7nC @ 4.5V

500pF @ 25V, 810pF @ 15V

2.5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ECH8601R-TL-EX

onsemi

NCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

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-

DMN61D9UDWQ-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.318A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
Power - Max: 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

Azione8.712

-

60V

318mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.6nC @ 4.5V

39pF @ 30V

370mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMN62D4LDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 0.261A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 330mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

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-

60V

261mA (Ta)

3Ohm @ 200mA, 10V

2V @ 250µA

1.04nC @ 10V

41pF @ 30V

330mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PJT7808_R2_00001

EMO Inc.

MOSFET 2N-CH 20V 0.5A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

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-

20V

500mA (Ta)

400mOhm @ 500mA, 4.5V

900mV @ 250µA

1.4nC @ 4.5V

67pF @ 10V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

UPA677TB-T1-A

Renesas Electronics Corporation

MOSFET 2N-CH 20V 0.35A SC-88

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 570mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 10V
Power - Max: 200mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88

pacchetto: -

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Logic Level Gate

20V

350mA

570mOhm @ 300mA, 4.5V

-

28pF @ 10V

200mW

-

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88

NP29N06QDK-E1-AY

Renesas Electronics Corporation

MOSFET 2N-CH 60V 30A 8HSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Power - Max: 1W (Ta), 44W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-HSON (5x5.4)

pacchetto: -

Azione14.820

-

60V

30A (Ta)

20mOhm @ 15A, 10V

2.5V @ 250µA

24nC @ 10V

1500pF @ 25V

1W (Ta), 44W (Tc)

175°C

Surface Mount

8-PowerLDFN

8-HSON (5x5.4)

DMC3401LDW-13

Diodes Incorporated

MOSFET N/P-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, 800pC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, 19pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

Azione59.325

-

30V

800mA (Ta), 550mA (Ta)

400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V

1.6V @ 250µA, 2.6V @ 250µA

1.2nC @ 10V, 800pC @ 10V

50pF @ 15V, 19pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

FDC6308P

Fairchild Semiconductor

MOSFET 2P-CH 20V 1.7A SSOT6

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6

pacchetto: -

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-

20V

1.7A (Ta)

180mOhm @ 1.7A, 4.5V

1.5V @ 250µA

5nC @ 4.5V

265pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT™-6