Pagina 203 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  203/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF7905PBF
Infineon Technologies

MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
  • Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.440
Logic Level Gate
30V
7.8A, 8.9A
21.8 mOhm @ 7.8A, 10V
2.25V @ 25µA
6.9nC @ 4.5V
600pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI4920DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.080
Logic Level Gate
30V
-
25 mOhm @ 6.9A, 10V
1V @ 250µA (Min)
23nC @ 5V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTSM120TAM33CTPAG
Microsemi Corporation

POWER MODULE - SIC

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 408nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7680pF @ 1000V
  • Power - Max: 714W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
pacchetto: SP6
Azione6.992
Silicon Carbide (SiC)
1200V (1.2kV)
112A (Tc)
33 mOhm @ 60A, 20V
3V @ 3mA
408nC @ 20V
7680pF @ 1000V
714W
-40°C ~ 175°C (TJ)
Chassis Mount
SP6
SP6
DMC4040SSDQ-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V SO-8 T&R 2

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
  • Power - Max: 17.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.504
Logic Level Gate
40V
7.5A (Ta)
25 mOhm @ 3A, 10V
1.8V @ 250µA
16nC @ 4.5V
1790pF @ 20V
17.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SIZ900DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 24A POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A, 28A
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V
  • Power - Max: 48W, 100W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair?
  • Supplier Device Package: 6-PowerPair?
pacchetto: 6-PowerPair?
Azione125.028
Logic Level Gate
30V
24A, 28A
7.2 mOhm @ 19.4A, 10V
2.4V @ 250µA
45nC @ 10V
1830pF @ 15V
48W, 100W
-55°C ~ 150°C (TJ)
Surface Mount
6-PowerPair?
6-PowerPair?
FDS4559_F085
Fairchild/ON Semiconductor

MOSFET N/P-CH 60V 4.5A/3.5A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.416
Logic Level Gate
60V
4.5A, 3.5A
55 mOhm @ 4.5A, 10V
3V @ 250µA
18nC @ 10V
650pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDMA1025P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.1A MLP2X2

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
pacchetto: 6-VDFN Exposed Pad
Azione176.376
Logic Level Gate
20V
3.1A
155 mOhm @ 3.1A, 4.5V
1.5V @ 250µA
4.8nC @ 4.5V
450pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-MicroFET (2x2)
TT8J3TR
Rohm Semiconductor

4V DRIVE PCH+PCH MOSFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
pacchetto: 8-SMD, Flat Lead
Azione22.722
-
30V
2.5A
84 mOhm @ 2.5A, 10V
2.5V @ 1mA
4.8nC @ 5V
460pF @ 15V
1.25W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
TT8K1TR
Rohm Semiconductor

MOSFET 2N-CH 20V 2.5A TSST8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
pacchetto: 8-SMD, Flat Lead
Azione25.026
Logic Level Gate, 1.5V Drive
20V
2.5A
72 mOhm @ 2.5A, 4.5V
1V @ 1mA
3.6nC @ 4.5V
260pF @ 10V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
hot IRF7351PBF
Infineon Technologies

MOSFET 2N-CH 60V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.952
Logic Level Gate
60V
8A
17.8 mOhm @ 8A, 10V
4V @ 50µA
36nC @ 10V
1330pF @ 30V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7103TRPBF
Infineon Technologies

MOSFET 2N-CH 50V 3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione749.892
Standard
50V
3A
130 mOhm @ 3A, 10V
3V @ 250µA
30nC @ 10V
290pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot BSS138DW-7-F
Diodes Incorporated

MOSFET 2N-CH 50V 0.2A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione219.012
Logic Level Gate
50V
200mA
3.5 Ohm @ 220mA, 10V
1.5V @ 250µA
-
50pF @ 10V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
ECH8602R-TL-H
onsemi

NCH+NCH 2.5V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMC2710UV-13
Diodes Incorporated

MOSFET N/P-CH 20V 1.1A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
  • Power - Max: 460mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Request a Quote
-
20V
1.1A (Ta), 800mA (Ta)
400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V, 0.7nC @ 4.5V
42pF @ 16V, 49pF @ 16V
460mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NXV08B800DT1
onsemi

MOSFET 80V APM17-MDC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 0.46mOhm @ 160A, 12V
  • Vgs(th) (Max) @ Id: 4.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
  • Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
  • Supplier Device Package: APM17-MDC
pacchetto: -
Request a Quote
-
80V
-
0.46mOhm @ 160A, 12V
4.6V @ 1mA
502nC @ 12V
30150pF @ 40V
-
-40°C ~ 125°C (TA)
Through Hole
17-PowerDIP Module (1.390", 35.30mm)
APM17-MDC
QH8K26TR
Rohm Semiconductor

MOSFET 2N-CH 40V 7A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: -
Azione4.902
-
40V
7A (Ta)
38mOhm @ 7A, 10V
2.5V @ 1mA
2.9nC @ 5V
275pF @ 20V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
NVMJD5D4N04CTWG
onsemi

MOSFET N-CH 40V LFPAK56

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
AOC3868
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XDFN
  • Supplier Device Package: 6-DFN (2.7x1.8)
pacchetto: -
Request a Quote
-
-
-
-
1.1V @ 250µA
50nC @ 4.5V
-
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
6-XDFN
6-DFN (2.7x1.8)
BSM400D12P3G002
Rohm Semiconductor

SIC 2N-CH 1200V 400A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 5.6V @ 109.2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 10V
  • Power - Max: 1570W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Azione6
-
1200V (1.2kV)
400A (Tc)
-
5.6V @ 109.2mA
-
17000pF @ 10V
1570W (Tc)
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
DMN2024UFU-7
Diodes Incorporated

MOSFET 2N-CH 20V 7.5A/21A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 21A (Tc)
  • Rds On (Max) @ Id, Vgs: 20.2mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
  • Power - Max: 810mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
pacchetto: -
Request a Quote
-
20V
7.5A (Ta), 21A (Tc)
20.2mOhm @ 6.5A, 4.5V
950mV @ 250µA
14.8nC @ 10V
647pF @ 10V
810mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
DMN3401LDWQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Request a Quote
-
30V
800mA (Ta)
400mOhm @ 590mA, 10V
1.6V @ 250µA
1.2nC @ 10V
50pF @ 15V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
FDS9958-F085
onsemi

MOSFET 2P-CH 60V 2.9A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
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Logic Level Gate
60V
2.9A
105mOhm @ 2.9A, 10V
3V @ 250µA
23nC @ 10V
1020pF @ 30V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
BUK9MFF-65PSS-518
Nexperia USA Inc.

MOSFET 2N-CH 65V 13.6A 20SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 65V
  • Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3052pF @ 25V
  • Power - Max: 4.75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
pacchetto: -
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Logic Level Gate
65V
13.6A (Tc)
12.3mOhm @ 10A, 10V
2V @ 1mA
40.2nC @ 5V
3052pF @ 25V
4.75W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SO
STL64DN4F7AG
STMicroelectronics

MOSFET 2N-CH 40V 40A POWERFLAT

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V
  • Power - Max: 57W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat™ (5x6)
pacchetto: -
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-
40V
40A (Tc)
8.5mOhm @ 20A, 10V
4V @ 250µA
9.8nC @ 10V
637pF @ 25V
57W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerFlat™ (5x6)
DMT3006LDV-13
Diodes Incorporated

MOSFET 2N-CH 30V 25A POWERDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
pacchetto: -
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-
30V
25A (Tc)
10mOhm @ 9A, 10V
3V @ 250µA
16.7nC @ 10V
1155pF @ 15V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
DMC67D8UFDB-7
Diodes Incorporated

MOSFET 41V-60V U-DFN2020-6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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DMN62D0UV-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.49A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 490mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
  • Power - Max: 470mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Azione8.067
Logic Level Gate
60V
490mA (Ta)
2Ohm @ 100mA, 4.5V
1V @ 250µA
0.5nC @ 4.5V
32pF @ 30V
470mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
HP8KC6TB1
Rohm Semiconductor

60V 23A, DUAL NCH+NCH, HSOP8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
  • Power - Max: 3W (Ta), 21W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
pacchetto: -
Azione7.500
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60V
8.5A (Ta), 23A (Tc)
27mOhm @ 8.5A, 10V
2.5V @ 1mA
7.6nC @ 10V
460pF @ 30V
3W (Ta), 21W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP