Pagina 157 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  157/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7389TR
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione13.944
Logic Level Gate
30V
-
29 mOhm @ 5.8A, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AON2800
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4.5A 6DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-DFN-EP (2x2)
pacchetto: 6-WDFN Exposed Pad
Azione11.724
Logic Level Gate
20V
4.5A
47 mOhm @ 4A, 4.5V
1.2V @ 250µA
6nC @ 4.5V
435pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-DFN-EP (2x2)
hot SI4226DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 25V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione960.504
Standard
25V
8A
19.5 mOhm @ 7A, 4.5V
2V @ 250µA
36nC @ 10V
1255pF @ 15V
3.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDS4953
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione158.856
Logic Level Gate
30V
5A
55 mOhm @ 5A, 10V
3V @ 250µA
9nC @ 5V
528pF @ 15V
900mW
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI1988DH-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione5.376
Logic Level Gate
20V
1.3A
168 mOhm @ 1.4A, 4.5V
1V @ 250µA
4.1nC @ 8V
110pF @ 10V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
SP8M8TB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/4.5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.976
Logic Level Gate
30V
6A, 4.5A
30 mOhm @ 6A, 10V
2.5V @ 1mA
7.2nC @ 5V
520pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
BSL806NH6327XTSA1
Infineon Technologies

MOSFET N-CH TSOP6-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V
  • Vgs(th) (Max) @ Id: 750mV @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione3.488
Logic Level Gate, 1.8V Drive
20V
2.3A (Ta)
57 mOhm @ 2.3A, 2.5V
750mV @ 11µA
1.7nC @ 2.5V
259pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
FMM50-025TF
IXYS

MOSFET 2N-CH 250V 30A I4-PAC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
  • Power - Max: 125W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
pacchetto: i4-Pac?-5
Azione4.960
Standard
250V
30A
50 mOhm @ 25A, 10V
4.5V @ 250µA
78nC @ 10V
4000pF @ 25V
125W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
EFC6617R-A-TF
ON Semiconductor

MOSFET N-CH DUAL 2.5V 6CSP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.120
-
-
-
-
-
-
-
-
-
-
-
-
hot LN60A01ES-LF-Z
Monolithic Power Systems Inc.

MOSFET 3N-CH 600V 0.08A 8SOIC

  • FET Type: 3 N-Channel, Common Gate
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -20°C ~ 125°C (TJ)
  • Mounting Type: -
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione30.000
Standard
600V
80mA
190 Ohm @ 10mA, 10V
1.2V @ 250µA
-
-
1.3W
-20°C ~ 125°C (TJ)
-
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI1900DL-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 0.59A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 590mA
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione363.516
Logic Level Gate
30V
590mA
480 mOhm @ 590mA, 10V
3V @ 250µA
1.4nC @ 10V
-
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
hot IRF7307TRPBF
Infineon Technologies

MOSFET N/P-CH 20V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione413.652
Logic Level Gate
20V
5.2A, 4.3A
50 mOhm @ 2.6A, 4.5V
700mV @ 250µA
20nC @ 4.5V
660pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDS6898A
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.4A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione107.844
Logic Level Gate
20V
9.4A
14 mOhm @ 9.4A, 4.5V
1.5V @ 250µA
23nC @ 4.5V
1821pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO4800B
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione12.352.788
Logic Level Gate
30V
6.9A
27 mOhm @ 6.9A, 10V
1.5V @ 250µA
7nC @ 4.5V
630pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
2N7002BKS,115
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.3A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 295mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione151.056
Logic Level Gate
60V
300mA
1.6 Ohm @ 500mA, 10V
2.1V @ 250µA
0.6nC @ 4.5V
50pF @ 10V
295mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
hot FDC6305N
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 2.7A SSOT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione266.388
Logic Level Gate
20V
2.7A
80 mOhm @ 2.7A, 4.5V
1.5V @ 250µA
5nC @ 4.5V
310pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
hot SI1026X-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 0.305A SC89-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
pacchetto: SOT-563, SOT-666
Azione1.139.760
Logic Level Gate
60V
305mA
1.4 Ohm @ 500mA, 10V
2.5V @ 250µA
0.6nC @ 4.5V
30pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
NTE2960
NTE Electronics, Inc

MOSFET 2N-CH 900V 7A TO220

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
  • Power - Max: 40W
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220 Full Pack
pacchetto: -
Request a Quote
-
900V
7A
2Ohm @ 3A, 10V
4V @ 1mA
-
1380pF @ 25V
40W
-55°C ~ 150°C
Through Hole
TO-220-3 Full Pack
TO-220 Full Pack
DMN3060LVT-7
Diodes Incorporated

MOSFET 2N-CH 30V 3.6A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacchetto: -
Request a Quote
-
30V
3.6A (Ta)
60mOhm @ 3.1A, 10V
1.8V @ 250µA
11.3nC @ 10V
395pF @ 15V
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMC2053UFDBQ-7
Diodes Incorporated

MOSFET N/P-CH 20V 4.6A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
  • Power - Max: 820mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: -
Request a Quote
-
20V
4.6A (Ta), 3.1A (Ta)
35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
1V @ 250µA
7.7nC @ 10V, 12.7nC @ 8V
369pF @ 10V, 440pF @ 10V
820mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
UPA2561T1H-T1-AT
Renesas Electronics Corporation

MOSFET 2N-CH 20V 4.5A 8VSOF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
  • Power - Max: 2.2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-VSOF
pacchetto: -
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Logic Level Gate
20V
4.5A
50mOhm @ 2A, 4.5V
1.5V @ 1mA
5.4nC @ 4.5V
455pF @ 10V
2.2W
-
Surface Mount
8-SMD, Flat Lead
8-VSOF
DMC3032LFDB-13
Diodes Incorporated

MOSFET N/P-CH 30V 5.3A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: -
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-
30V
5.3A (Ta), 3.4A (Ta)
30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
2V @ 250µA, 2.1V @ 250µA
10.6nC @ 10V, 7.8nC @ 10V
500pF @ 15V, 336pF @ 25V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN62D2UDM-7
Diodes Incorporated

2N7002 FAMILY SOT26 T&R 3K

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: -
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-
60V
440mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.8nC @ 4.5V
41pF @ 30V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
SI1036X-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 0.61A SC89-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
  • Power - Max: 220mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
pacchetto: -
Azione28.047
-
30V
610mA (Ta)
540mOhm @ 500mA, 4.5V
1V @ 250µA
1.2nC @ 4.5V
36pF @ 15V
220mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
CAB008M12GM3
Wolfspeed, Inc.

SIC 2N-CH 1200V

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 46mA
  • Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione120
-
1200V (1.2kV)
-
10.4mOhm @ 150A, 15V
3.6V @ 46mA
472nC @ 15V
13600pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
SQJ560EP-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 60V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
pacchetto: -
Azione17.970
-
60V
30A (Tc), 18A (Tc)
12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
2.5V @ 250µA
30nC @ 10V, 45nC @ 10V
1650pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
XP4509AGM
YAGEO XSEMI

MOSFET N AND P-CH 30V 11.2A 8A

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, 2000pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
pacchetto: -
Azione2.970
-
30V
11.2A (Ta), 8A (Ta)
10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V
3V @ 250µA
19.2nC @ 4.5V
1140pF @ 25V, 2000pF @ 25V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SO
DMC3020UDVW-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
  • Power - Max: 1.18W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
pacchetto: -
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-
30V
20A (Tc), 17A (Tc)
31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
1.85V @ 250µA, 2.1V @ 250µA
8.8nC @ 10V, 13.6nC @ 10V
383pF @ 15V, 782pF @ 15V
1.18W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)