Pagina 171 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  171/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot MCH6660-TL-H
ON Semiconductor

MOSFET N/P-CH 20V 2A/1.5A MCPH6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
  • Rds On (Max) @ Id, Vgs: 136 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-MCPH
pacchetto: 6-SMD, Flat Leads
Azione40.200
Logic Level Gate
20V
2A, 1.5A
136 mOhm @ 1A, 4.5V
-
1.8nC @ 4.5V
128pF @ 10V
800mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
6-MCPH
SI6981DQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.1A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione4.176
Logic Level Gate
20V
4.1A
31 mOhm @ 4.8A, 4.5V
900mV @ 300µA
25nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
GWM160-0055X1-SMDSAM
IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
pacchetto: 17-SMD, Gull Wing
Azione2.544
Standard
55V
150A
3.3 mOhm @ 100A, 10V
4.5V @ 1mA
105nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL?
hot FDMC3300NZA
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 8A POWER33

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 10V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-Power33 (3x3)
pacchetto: 8-PowerVDFN
Azione274.740
Logic Level Gate
20V
8A
26 mOhm @ 8A, 4.5V
1.5V @ 250µA
12nC @ 4.5V
815pF @ 10V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-Power33 (3x3)
AUIRFN8458TR
Infineon Technologies

MOSFET 2N-CH 40V 43A 8PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PQFN (5x6)
pacchetto: 8-PowerTDFN
Azione3.120
Standard
40V
43A (Tc)
10 mOhm @ 26A, 10V
3.9V @ 25µA
33nC @ 10V
1060pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PQFN (5x6)
IPG20N10S436AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 16µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
  • Power - Max: 43W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
pacchetto: 8-PowerVDFN
Azione7.920
Standard
100V
20A
36 mOhm @ 17A, 10V
3.5V @ 16µA
15nC @ 10V
990pF @ 25V
43W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
BSO612CVGHUMA1
Infineon Technologies

MOSFET N/P-CH 60V 2A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 2A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.232
Standard
60V
3A, 2A
120 mOhm @ 3A, 10V
4V @ 20µA
15.5nC @ 10V
340pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
HCT802TX
TT Electronics/Optek Technology

MOSFET N/P-CH 90V 2A/1.1A SMD

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 2A, 1.1A
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-SMD
pacchetto: 6-SMD, No Lead
Azione3.616
Standard
90V
2A, 1.1A
5 Ohm @ 1A, 10V
2.5V @ 1mA
-
70pF @ 25V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
6-SMD
ALD1110ESAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1.01V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 600mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.640
Standard
10V
-
500 Ohm @ 5V
1.01V @ 1µA
-
2.5pF @ 5V
600mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI4670DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione19.176
Logic Level Gate
25V
8A
23 mOhm @ 7A, 10V
2.2V @ 250µA
18nC @ 10V
680pF @ 13V
2.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMN67D8LDW-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione4.080
Standard
60V
230mA
5 Ohm @ 500mA, 10V
2.5V @ 250µA
0.82nC @ 10V
22pF @ 25V
320mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
ALD110804PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V
  • Vgs(th) (Max) @ Id: 420mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
pacchetto: 16-DIP (0.300", 7.62mm)
Azione7.200
Standard
10.6V
12mA, 3mA
500 Ohm @ 4.4V
420mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
hot BSD235CH6327XTSA1
Infineon Technologies

MOSFET N/P-CH 20V SOT363

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacchetto: 6-VSSOP, SC-88, SOT-363
Azione1.220.280
Logic Level Gate
20V
950mA, 530mA
350 mOhm @ 950mA, 4.5V
1.2V @ 1.6µA
0.34nC @ 4.5V
47pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
hot CSD87588N
Texas Instruments

MOSFET 2N-CH 30V 25A 5PTAB

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V
  • Power - Max: 6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-XFLGA
  • Supplier Device Package: 5-PTAB (3x2.5)
pacchetto: 5-XFLGA
Azione118.620
Logic Level Gate
30V
25A
9.6 mOhm @ 15A, 10V
1.9V @ 250µA
4.1nC @ 4.5V
736pF @ 15V
6W
-55°C ~ 150°C (TJ)
Surface Mount
5-XFLGA
5-PTAB (3x2.5)
CSD87588NT
Texas Instruments

MOSFET 2N-CH 30V 25A 5PTAB

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V
  • Power - Max: 6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-LGA
  • Supplier Device Package: 5-PTAB (5x3.5)
pacchetto: 5-LGA
Azione4.992
Logic Level Gate
30V
25A
9.6 mOhm @ 15A, 10V
1.9V @ 250µA
4.1nC @ 4.5V
736pF @ 15V
6W
-55°C ~ 150°C (TJ)
Surface Mount
5-LGA
5-PTAB (5x3.5)
FDPC5030SG
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V PWRCLIP56

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A, 25A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
  • Power - Max: 1W, 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Power Clip 56
pacchetto: 8-PowerWDFN
Azione7.216
Standard
30V
17A, 25A
5 mOhm @ 17A, 10V
3V @ 250µA
24nC @ 10V
1715pF @ 15V
1W, 1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
Power Clip 56
WAS530M12BM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 630A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 127mA
  • Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
630A (Tc)
3.47mOhm @ 530A, 15V
3.6V @ 127mA
1362nC @ 15V
38900pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
VEC2819-S-TL-E
onsemi

PCH+SBD 1.8V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
FTD2019S-TL-E
onsemi

NCH+NCH 2.5V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMP3164LVT-7
Diodes Incorporated

MOSFET 2P-CH 2.8A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacchetto: -
Azione11.910
-
-
2.8A (Ta)
95mOhm @ 2.7A, 10V
2.1V @ 250µA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
SQJ204EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 12V 20A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
pacchetto: -
Azione27.000
-
12V
20A (Tc), 60A (Tc)
8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
1.5V @ 250µA
20nC @ 10V, 50nC @ 10V
1400pF @ 6V, 3700pF @ 6V
27W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
ADP360120W3
STMicroelectronics

SIC 6N-CH 1200V 379A ACEPACK

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 379A (Tj)
  • Rds On (Max) @ Id, Vgs: 3.45mOhm @ 360A, 18V
  • Vgs(th) (Max) @ Id: 4.4V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 944nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 28070pF @ 800V
  • Power - Max: 704W (Tj)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: ACEPACK
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1200V (1.2kV)
379A (Tj)
3.45mOhm @ 360A, 18V
4.4V @ 40mA
944nC @ 18V
28070pF @ 800V
704W (Tj)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
ACEPACK
SPF0004
Sanken Electric USA Inc.

MOSFET 2N-CH 275V 6A 20HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 275V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
  • Power - Max: 2.5W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-PowerSOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-HSOP
pacchetto: -
Azione135
-
275V
6A (Ta)
260mOhm @ 6A, 10V
2.6V @ 1mA
-
960pF @ 10V
2.5W (Tc)
150°C (TJ)
Surface Mount
20-PowerSOIC (0.295", 7.50mm Width)
20-HSOP
DMN2024UVT-7
Diodes Incorporated

MOSFET 2N-CH 20V 7A TSOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-23-6
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20V
7A (Ta)
24mOhm @ 6.5A, 4.5V
900mV @ 250µA
7.1nC @ 4.5V
647pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-23-6
UM6X1NA-T8PQ2
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
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30V
500mA
750mOhm @ 300mA, 10V
1.5V @ 250µA
1.28nC @ 10V
28pF @ 15V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMNH6065SPDWQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 27A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
  • Power - Max: 2.4W (Ta), 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type R)
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60V
27A (Tc)
65mOhm @ 15A, 10V
3V @ 250µA
9.5nC @ 10V
466pF @ 25V
2.4W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
PowerDI5060-8 (Type R)
DI4A7P06SQ2
Diotec Semiconductor

MOSFET SO8 P -60V -4.7A 0.075OHM

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V
  • Power - Max: 3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
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Logic Level Gate
60V
4.7A (Ta)
75mOhm @ 5A, 10V
2.3V @ 250µA
8.5nC @ 10V
525pF @ 30V
3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
CAB450M12XM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 450A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 450A
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 132mA
  • Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
  • Power - Max: 850W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Azione1.170
-
1200V (1.2kV)
450A
3.7mOhm @ 450A, 15V
3.6V @ 132mA
1330nC @ 15V
38000pF @ 800V
850W
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module