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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  168/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NX7002AKS/ZLX
Nexperia USA Inc.

MOSFET SS SC-88

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.056
-
-
-
-
-
-
-
-
-
-
-
-
FDS8958B_G
Fairchild/ON Semiconductor

MOSFET N/P-CH 8SOIC

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.816
-
-
-
-
-
-
-
-
-
-
-
-
TPC8221-H,LQ(S
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 6A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.808
Standard
30V
6A
25 mOhm @ 3A, 10V
2.3V @ 100µA
12nC @ 10V
830pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SI5915DC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 8V 3.4A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
pacchetto: 8-SMD, Flat Lead
Azione360.000
Logic Level Gate
8V
3.4A
70 mOhm @ 3.4A, 4.5V
450mV @ 250µA (Min)
9nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
NTZD3154NT2G
ON Semiconductor

MOSFET 2N-CH 20V 0.54A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione2.064
Standard
20V
540mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
2.5nC @ 4.5V
150pF @ 16V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot SI6983DQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 4.6A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione72.000
Logic Level Gate
20V
4.6A
24 mOhm @ 5.4A, 4.5V
1V @ 400µA
30nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI6924AEDQ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 28V 4.1A 8-TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 28V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione6.672
Logic Level Gate
28V
4.1A
33 mOhm @ 4.6A, 4.5V
1.5V @ 250µA
10nC @ 4.5V
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SI5947DU-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 6A 8PWRPAK

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Power - Max: 10.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
pacchetto: PowerPAK? ChipFET? Dual
Azione4.464
Logic Level Gate
20V
6A
58 mOhm @ 3.6A, 4.5V
1.5V @ 250µA
17nC @ 10V
480pF @ 10V
10.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
hot SI4567DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 40V 5A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
  • Power - Max: 2.75W, 2.95W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione743.064
Standard
40V
5A, 4.4A
60 mOhm @ 4.1A, 10V
2.2V @ 250µA
12nC @ 10V
355pF @ 20V
2.75W, 2.95W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSL306NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 30V 2.3A 6TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione6.560
Logic Level Gate, 4.5V Drive
30V
2.3A
57 mOhm @ 2.3A, 10V
2V @ 11µA
1.6nC @ 5V
275pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
APTC80H29SCTG
Microsemi Corporation

MOSFET 4N-CH 800V 15A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
  • Power - Max: 156W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
pacchetto: SP4
Azione3.328
Standard
800V
15A
290 mOhm @ 7.5A, 10V
3.9V @ 1mA
91nC @ 10V
2254pF @ 25V
156W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
SI4900DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 5.3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.160
Logic Level Gate
60V
5.3A
58 mOhm @ 4.3A, 10V
3V @ 250µA
20nC @ 10V
665pF @ 15V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NVMD4N03R2G
ON Semiconductor

MOSFET 2N-CH 30V 4A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.312
Logic Level Gate
30V
4A
60 mOhm @ 4A, 10V
3V @ 250µA
16nC @ 10V
400pF @ 20V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
CAS325M12HM2
Cree/Wolfspeed

MOSFET 2N-CH 1200V 444A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 105mA
  • Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3000W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: Module
Azione6.992
Silicon Carbide (SiC)
1200V (1.2kV)
444A (Tc)
4.3 mOhm @ 400A, 20V
4V @ 105mA
1127nC @ 20V
-
3000W
175°C (TJ)
-
Module
Module
hot ZXMN2A04DN8TA
Diodes Incorporated

MOSFET 2N-CH 20V 5.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione539.508
Logic Level Gate
20V
5.9A
25 mOhm @ 5.9A, 4.5V
700mV @ 250µA (Min)
22.1nC @ 5V
1880pF @ 10V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
UPA2379T1P-E1-A
Renesas Electronics America

MOSFET 2N-CH 12V

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.8W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFLGA
  • Supplier Device Package: 6-EFLIP-LGA (2.17x1.47)
pacchetto: 6-XFLGA
Azione45.894
Logic Level Gate, 2.5V Drive
-
-
-
-
20nC @ 4V
-
1.8W
150°C (TJ)
Surface Mount
6-XFLGA
6-EFLIP-LGA (2.17x1.47)
CAS300M12BM2
Cree/Wolfspeed

MOSFET 2N-CH 1200V 404A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 404A
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 300A, 20V
  • Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V
  • Power - Max: 1660W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module, Screw Terminals
  • Supplier Device Package: Module
pacchetto: Module, Screw Terminals
Azione5.248
Standard
1200V (1.2kV)
404A
5.7 mOhm @ 300A, 20V
2.3V @ 15mA (Typ)
1025nC @ 20V
11700pF @ 600V
1660W
150°C (TJ)
Chassis Mount
Module, Screw Terminals
Module
hot SI1902DL-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 0.66A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA
  • Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione2.961.552
Logic Level Gate
20V
660mA
385 mOhm @ 660mA, 4.5V
1.5V @ 250µA
1.2nC @ 4.5V
-
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
IRF7313TRPBF-1
Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
-
30V
6.5A (Ta)
29mOhm @ 5.8A, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DI035N06PQ2
Diotec Semiconductor

IC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V
  • Power - Max: 35.7W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: TDSON-8-4
pacchetto: -
Request a Quote
Logic Level Gate
60V
35A (Tc)
15mOhm @ 12A, 10V
2.5V @ 250µA
14.6nC @ 10V
782pF @ 30V
35.7W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
TDSON-8-4
AOE6932
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 55A/85A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
  • Power - Max: 24W, 52W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x6)
pacchetto: -
Azione8.766
-
30V
55A (Tc), 85A (Tc)
5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
2.2V @ 250µA, 1.9V @ 250µA
15nC @ 4.5V, 50nC @ 4.5V
1150pF @ 15V, 4180pF @ 15V
24W, 52W
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (5x6)
VEC2820-TL-E
onsemi

NCH+NCH 1.8 DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
2N7002KDW-HF
Comchip Technology

MOSFET 2N-CH 60V 0.34A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione9.000
-
60V
340mA (Ta)
5Ohm @ 500mA, 10V
2.5V @ 1mA
-
40pF @ 10V
150mW (Ta)
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
UPA2590T1H-T2-AT
Renesas Electronics Corporation

MOSFET N/P-CH 30V 4.5A 8VSOF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
  • Power - Max: 1.24W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-VSOF
pacchetto: -
Request a Quote
Logic Level Gate
30V
4.5A
50mOhm @ 2A, 10V
2.5V @ 1mA
6.6nC @ 10V
310pF @ 10V
1.24W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-VSOF
SP8M4FRATB
Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Request a Quote
-
30V
9A (Ta), 7A (Ta)
18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
2.5V @ 1mA
15nC @ 5V, 25nC @ 5V
1190pF @ 10V, 2600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
F423MR12W1M1PB11BPSA1
Infineon Technologies

MOSFET 4N-CH 1200V 50A AG-EASY1B

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id: 5.5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 3.68nF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B-2
pacchetto: -
Azione9
-
1200V (1.2kV)
50A
22.5mOhm @ 50A, 15V
5.5V @ 20mA
124nC @ 15V
3.68nF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1B-2
FDMS8860AS
Fairchild Semiconductor

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MSCM20XM16F4G
Microchip Technology

MOSFET 200V 77A SP4

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP4
pacchetto: -
Azione18
-
200V
77A (Tc)
-
-
-
-
-
-
Chassis Mount
Module
SP4