Pagina 174 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7325TRPBF	Infineon Technologies	MOSFET 2P-CH 12V 7.8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione37.788	Logic Level Gate	12V	7.8A	24 mOhm @ 7.8A, 4.5V	900mV @ 250µA	33nC @ 4.5V	2020pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4606L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 8SOIC FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione315.720	Standard	30V	6A	30 mOhm @ 6A, 10V	2.4V @ 250µA	6nC @ 10V	310pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AON7812	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 6A FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 4.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (3x3)	pacchetto: 8-PowerSMD, Flat Leads	Azione6.000	Standard	30V	6A	14.5 mOhm @ 6A, 10V	2.2V @ 250µA	15nC @ 10V	600pF @ 15V	4.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (3x3)
AO5804E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 0.5A SC89-6L FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Power - Max: 280mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	pacchetto: SOT-563, SOT-666	Azione609.540	Logic Level Gate	20V	500mA	550 mOhm @ 500mA, 4.5V	1V @ 250µA	1nC @ 4.5V	45pF @ 10V	280mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
MVDF2C03HDR2G	ON Semiconductor	MOSFET N/P-CH 30V 4.1A/3A 8SOIC FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione3.328	Logic Level Gate	30V	4.1A, 3A	70 mOhm @ 3A, 10V	3V @ 250µA	16nC @ 10V	630pF @ 24V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI7925DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.8A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	pacchetto: PowerPAK? 1212-8 Dual	Azione6.816	Logic Level Gate	12V	4.8A	42 mOhm @ 6.5A, 4.5V	1V @ 250µA	12nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
FDS6982S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione1.039.716	Logic Level Gate	30V	6.3A, 8.6A	28 mOhm @ 6.3A, 10V	3V @ 250µA	12nC @ 5V	2040pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6544BDQ-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 3.7A 8-TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione314.652	Logic Level Gate	30V	3.7A, 3.8A	43 mOhm @ 3.8A, 10V	3V @ 250µA	15nC @ 10V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDW2520C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 6A/4.4A 8TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1325pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione14.760	Logic Level Gate	20V	6A, 4.4A	18 mOhm @ 6A, 4.5V	1.5V @ 250µA	20nC @ 4.5V	1325pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
BSS138DWQ-13	Diodes Incorporated	MOSFET 2NCH 50V 200MA SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione4.992	Standard	50V	200mA	3.5 Ohm @ 220mA, 10V	1.5V @ 250µA	-	50pF @ 10V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SQJB80EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 80V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione2.944	Standard	80V	30A (Tc)	19 mOhm @ 8A, 10V	2.5V @ 250µA	32nC @ 10V	1400pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI4966DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione618.240	Logic Level Gate	20V	-	25 mOhm @ 7.1A, 4.5V	1.5V @ 250µA	50nC @ 4.5V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD110802SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.2V Vgs(th) (Max) @ Id: 220mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	pacchetto: 16-SOIC (0.154", 3.90mm Width)	Azione6.192	Standard	10.6V	-	500 Ohm @ 4.2V	220mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SQJQ900E-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V PWRPAK8X8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V Power - Max: 135W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 8 x 8 Dual Supplier Device Package: PowerPAK? 8 x 8 Dual	pacchetto: PowerPAK? 8 x 8 Dual	Azione4.144	Standard	40V	100A (Tc)	3.9 mOhm @ 20A, 10V	2.5V @ 250µA	120nC @ 10V	5900pF @ 20V	135W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 8 x 8 Dual	PowerPAK? 8 x 8 Dual
STL8DN10LF3	STMicroelectronics	MOSFET 2N-CH 100V 20A 5X6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V Power - Max: 70W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	pacchetto: 8-PowerVDFN	Azione2.880	Logic Level Gate	100V	20A	35 mOhm @ 4A, 10V	3V @ 250µA	20.5nC @ 10V	970pF @ 25V	70W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
SIZ920DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 40A PWRPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Power - Max: 39W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	pacchetto: 6-PowerPair?	Azione110.244	Standard	30V	40A	7.1 mOhm @ 18.9A, 10V	2.5V @ 250µA	35nC @ 10V	1260pF @ 15V	39W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
SI4532DY	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 3.9A/3.5A 8-SO FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione1.058.136	Standard	30V	3.9A, 3.5A	65 mOhm @ 3.9A, 10V	3V @ 250µA	15nC @ 10V	235pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ202EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 12V 20A/60A PPAK SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric	pacchetto: PowerPAK? SO-8 Dual	Azione29.082	Standard	12V	20A, 60A	6.5 mOhm @ 15A, 10V	2V @ 250µA	22nC @ 10V	975pF @ 6V	27W, 48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual Asymmetric
DMN4034SSD-13	Diodes Incorporated	MOSFET 2N-CH 40V 4.8A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione5.488	Logic Level Gate	40V	4.8A	34 mOhm @ 6A, 10V	3V @ 250µA	18nC @ 10V	453pF @ 20V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN2041LSD-13	Diodes Incorporated	MOSFET 2N-CH 20V 7.63A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.63A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 1.16W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione15.552	Logic Level Gate	20V	7.63A	28 mOhm @ 6A, 4.5V	1.2V @ 250µA	15.6nC @ 10V	550pF @ 10V	1.16W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NX3008PBKS,115	Nexperia USA Inc.	MOSFET 2P-CH 30V 0.2A 6TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Power - Max: 445mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione93.270	Logic Level Gate	30V	200mA	4.1 Ohm @ 200mA, 4.5V	1.1V @ 250µA	0.75nC @ 4.5V	46pF @ 15V	445mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
FDS4559	Fairchild/ON Semiconductor	MOSFET N/P-CH 60V 4.5A/3.5A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione154.764	Logic Level Gate	60V	4.5A, 3.5A	55 mOhm @ 4.5A, 10V	3V @ 250µA	18nC @ 10V	650pF @ 25V	1W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTMFC013NP10M5L	onsemi	MOSFET N/P-CH 100V 9A 8WDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V Power - Max: 2.7W (Ta), 102W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (5x6)	pacchetto: -	Request a Quote	-	100V	9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)	13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V	3V @ 158µA, 4V @ 158µA	23nC @ 4.5V, 30nC @ 10V	1345pF @ 50V, 2443pF @ 50V	2.7W (Ta), 102W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-WDFN (5x6)
2N7002DW-G	onsemi	MOSFET 2N-CH 60V 0.115A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	pacchetto: -	Azione15.432	-	60V	115mA (Ta)	2Ohm @ 500mA, 10V	2V @ 250µA	-	50pF @ 25V	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
BSS138AKDW-TPQ2	Micro Commercial Co	MOSFET 2N-CH 50V 0.22A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	50V	220mA	2Ohm @ 500mA, 10V	1.45V @ 250µA	-	22.8pF @ 25V	350mW	-55°C ~ 150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
FDC6561AN-NB5S007A	onsemi	MOSFET 2N-CH 30V 2.5A SSOT6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT™-6	pacchetto: -	Request a Quote	Logic Level Gate	30V	2.5A (Ta)	95mOhm @ 2.5A, 10V	3V @ 250µA	3.2nC @ 5V	220pF @ 15V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT™-6
PJS6815_S1_00001	Panjit International Inc.	MOSFET 2P-CH 20V 3.6A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 756pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	pacchetto: -	Request a Quote	-	20V	3.6A (Ta)	57mOhm @ 3.6A, 4.5V	1.2V @ 250µA	18nC @ 4.5V	756pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
DMN33D9LV-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 430mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Azione8.880	-	30V	350mA (Ta)	2.4Ohm @ 250mA, 10V	1.4V @ 100µA	1.23nC @ 10V	48pF @ 5V	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563

IRF7325TRPBF

Infineon Technologies

MOSFET 2P-CH 12V 7.8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione37.788

Logic Level Gate

12V

7.8A

24 mOhm @ 7.8A, 4.5V

900mV @ 250µA

33nC @ 4.5V

2020pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4606L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 8SOIC

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione315.720

Standard

30V

6A

30 mOhm @ 6A, 10V

2.4V @ 250µA

6nC @ 10V

310pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AON7812

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6A

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 4.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (3x3)

pacchetto: 8-PowerSMD, Flat Leads

Azione6.000

Standard

30V

6A

14.5 mOhm @ 6A, 10V

2.2V @ 250µA

15nC @ 10V

600pF @ 15V

4.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (3x3)

AO5804E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 0.5A SC89-6L

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 280mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

pacchetto: SOT-563, SOT-666

Azione609.540

Logic Level Gate

20V

500mA

550 mOhm @ 500mA, 4.5V

1V @ 250µA

1nC @ 4.5V

45pF @ 10V

280mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

MVDF2C03HDR2G

ON Semiconductor

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione3.328

Logic Level Gate

30V

4.1A, 3A

70 mOhm @ 3A, 10V

3V @ 250µA

16nC @ 10V

630pF @ 24V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI7925DN-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 4.8A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

pacchetto: PowerPAK? 1212-8 Dual

Azione6.816

Logic Level Gate

12V

4.8A

42 mOhm @ 6.5A, 4.5V

1V @ 250µA

12nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

FDS6982S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione1.039.716

Logic Level Gate

30V

6.3A, 8.6A

28 mOhm @ 6.3A, 10V

3V @ 250µA

12nC @ 5V

2040pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI6544BDQ-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 3.7A 8-TSSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione314.652

Logic Level Gate

30V

3.7A, 3.8A

43 mOhm @ 3.8A, 10V

3V @ 250µA

15nC @ 10V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDW2520C

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 6A/4.4A 8TSSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1325pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione14.760

Logic Level Gate

20V

6A, 4.4A

18 mOhm @ 6A, 4.5V

1.5V @ 250µA

20nC @ 4.5V

1325pF @ 10V

600mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

BSS138DWQ-13

Diodes Incorporated

MOSFET 2NCH 50V 200MA SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione4.992

Standard

50V

200mA

3.5 Ohm @ 220mA, 10V

1.5V @ 250µA

-

50pF @ 10V

200mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SQJB80EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 80V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione2.944

Standard

80V

30A (Tc)

19 mOhm @ 8A, 10V

2.5V @ 250µA

32nC @ 10V

1400pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI4966DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione618.240

Logic Level Gate

20V

-

25 mOhm @ 7.1A, 4.5V

1.5V @ 250µA

50nC @ 4.5V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ALD110802SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

Azione6.192

Standard

10.6V

-

500 Ohm @ 4.2V

220mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

SQJQ900E-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V PWRPAK8X8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V
Power - Max: 135W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 8 x 8 Dual
Supplier Device Package: PowerPAK? 8 x 8 Dual

pacchetto: PowerPAK? 8 x 8 Dual

Azione4.144

Standard

40V

100A (Tc)

3.9 mOhm @ 20A, 10V

2.5V @ 250µA

120nC @ 10V

5900pF @ 20V

135W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? 8 x 8 Dual

STL8DN10LF3

STMicroelectronics

MOSFET 2N-CH 100V 20A 5X6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V
Power - Max: 70W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

pacchetto: 8-PowerVDFN

Azione2.880

Logic Level Gate

100V

20A

35 mOhm @ 4A, 10V

3V @ 250µA

20.5nC @ 10V

970pF @ 25V

70W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

SIZ920DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 40A PWRPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Power - Max: 39W, 100W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

pacchetto: 6-PowerPair?

Azione110.244

Standard

30V

40A

7.1 mOhm @ 18.9A, 10V

2.5V @ 250µA

35nC @ 10V

1260pF @ 15V

39W, 100W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

SI4532DY

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 3.9A/3.5A 8-SO

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione1.058.136

Standard

30V

3.9A, 3.5A

65 mOhm @ 3.9A, 10V

3V @ 250µA

15nC @ 10V

235pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ202EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 12V 20A/60A PPAK SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric

pacchetto: PowerPAK? SO-8 Dual

Azione29.082

Standard

12V

20A, 60A

6.5 mOhm @ 15A, 10V

2V @ 250µA

22nC @ 10V

975pF @ 6V

27W, 48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

PowerPAK? SO-8 Dual Asymmetric

DMN4034SSD-13

Diodes Incorporated

MOSFET 2N-CH 40V 4.8A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione5.488

Logic Level Gate

40V

4.8A

34 mOhm @ 6A, 10V

3V @ 250µA

18nC @ 10V

453pF @ 20V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN2041LSD-13

Diodes Incorporated

MOSFET 2N-CH 20V 7.63A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.63A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 1.16W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione15.552

Logic Level Gate

20V

7.63A

28 mOhm @ 6A, 4.5V

1.2V @ 250µA

15.6nC @ 10V

550pF @ 10V

1.16W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NX3008PBKS,115

Nexperia USA Inc.

MOSFET 2P-CH 30V 0.2A 6TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Power - Max: 445mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione93.270

Logic Level Gate

30V

200mA

4.1 Ohm @ 200mA, 4.5V

1.1V @ 250µA

0.75nC @ 4.5V

46pF @ 15V

445mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

FDS4559

Fairchild/ON Semiconductor

MOSFET N/P-CH 60V 4.5A/3.5A 8-SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione154.764

Logic Level Gate

60V

4.5A, 3.5A

55 mOhm @ 4.5A, 10V

3V @ 250µA

18nC @ 10V

650pF @ 25V

1W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTMFC013NP10M5L

onsemi

MOSFET N/P-CH 100V 9A 8WDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Power - Max: 2.7W (Ta), 102W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (5x6)

pacchetto: -

Request a Quote

-

100V

9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)

13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V

3V @ 158µA, 4V @ 158µA

23nC @ 4.5V, 30nC @ 10V

1345pF @ 50V, 2443pF @ 50V

2.7W (Ta), 102W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-WDFN (5x6)

2N7002DW-G

onsemi

MOSFET 2N-CH 60V 0.115A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

pacchetto: -

Azione15.432

-

60V

115mA (Ta)

2Ohm @ 500mA, 10V

2V @ 250µA

-

50pF @ 25V

200mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

BSS138AKDW-TPQ2

Micro Commercial Co

MOSFET 2N-CH 50V 0.22A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

Request a Quote

-

50V

220mA

2Ohm @ 500mA, 10V

1.45V @ 250µA

-

22.8pF @ 25V

350mW

-55°C ~ 150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

FDC6561AN-NB5S007A

onsemi

MOSFET 2N-CH 30V 2.5A SSOT6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6

pacchetto: -

Request a Quote

Logic Level Gate

30V

2.5A (Ta)

95mOhm @ 2.5A, 10V

3V @ 250µA

3.2nC @ 5V

220pF @ 15V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT™-6

PJS6815_S1_00001

Panjit International Inc.

MOSFET 2P-CH 20V 3.6A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 756pF @ 10V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

pacchetto: -

Request a Quote

-

20V

3.6A (Ta)

57mOhm @ 3.6A, 4.5V

1.2V @ 250µA

18nC @ 4.5V

756pF @ 10V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

DMN33D9LV-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.35A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Power - Max: 430mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacchetto: -

Azione8.880

-

30V

350mA (Ta)

2.4Ohm @ 250mA, 10V

1.4V @ 100µA

1.23nC @ 10V

48pF @ 5V

430mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563