Pagina 13 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI4952DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 25V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione183.744	Logic Level Gate	25V	8A	23 mOhm @ 7A, 10V	2.2V @ 250µA	18nC @ 10V	680pF @ 13V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7958DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 7.2A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.2A Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione15.876	Logic Level Gate	40V	7.2A	16.5 mOhm @ 11.3A, 10V	3V @ 250µA	75nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
APTM50TDUM65PG	Microsemi Corporation	MOSFET 6N-CH 500V 51A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione5.952	Standard	500V	51A	78 mOhm @ 25.5A, 10V	5V @ 2.5mA	140nC @ 10V	7000pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
VWM350-0075P	IXYS	MOSFET 6N-CH 75V 340A V2 FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 340A Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 250A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: V2-PAK Supplier Device Package: V2-PAK	pacchetto: V2-PAK	Azione6.672	Standard	75V	340A	3.3 mOhm @ 250A, 10V	4V @ 2mA	450nC @ 10V	-	-	-40°C ~ 175°C (TJ)	Through Hole	V2-PAK	V2-PAK
FDZ2554P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 6.5A BGA FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 18-WFBGA Supplier Device Package: 18-BGA (2.5x4)	pacchetto: 18-WFBGA	Azione68.400	Logic Level Gate	20V	6.5A	28 mOhm @ 6.5A, 4.5V	1.5V @ 250µA	20nC @ 4.5V	1900pF @ 10V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	18-WFBGA	18-BGA (2.5x4)
STS3DNE60L	STMicroelectronics	MOSFET 2N-CH 60V 3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione336.732	Logic Level Gate	60V	3A	80 mOhm @ 1.5A, 10V	1V @ 250µA	13.5nC @ 4.5V	815pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM20DHM16T3G	Microsemi Corporation	MOSFET 2N-CH 200V 104A SP3 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione4.480	Standard	200V	104A	19 mOhm @ 52A, 10V	5V @ 2.5mA	140nC @ 10V	7220pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SI7872DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6.4A PPAK SO-8 FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione1.201.320	Logic Level Gate	30V	6.4A	22 mOhm @ 7.5A, 10V	3V @ 250µA	11nC @ 4.5V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI4916DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 10A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.3W, 3.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione31.080	Logic Level Gate	30V	10A, 10.5A	18 mOhm @ 10A, 10V	3V @ 250µA	10nC @ 4.5V	-	3.3W, 3.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NVMFD5877NLT3G	ON Semiconductor	MOSFET 2N-CH 60V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)	pacchetto: 8-PowerTDFN	Azione3.968	Logic Level Gate	60V	6A	39 mOhm @ 7.5A, 10V	3V @ 250µA	20nC @ 10V	540pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6)
DMC1030UFDB-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V U-DFN2020-6 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta) Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V Power - Max: 1.36W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	pacchetto: 6-UDFN Exposed Pad	Azione2.832	Standard	12V	5.1A (Ta), 3.9A (Ta)	34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V	1V @ 250µA	12.2nC @ 4.5V, 13nC @ 4.5V	1003pF @ 6V, 1028pF @ 6V	1.36W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SQJ974EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 100V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 25.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione7.776	Standard	100V	30A (Tc)	25.5 mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1050pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SH8M4TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 9A/7A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 7A Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione27.000	Logic Level Gate	30V	9A, 7A	18 mOhm @ 9A, 10V	2.5V @ 1mA	15nC @ 5V	1190pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
CMLDM7003 TR	Central Semiconductor Corp	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: SOT-563, SOT-666	Azione28.920	Standard	50V	280mA	2 Ohm @ 50mA, 5V	1V @ 250µA	0.76nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SLA5073	Sanken	MOSFET 6N-CH 60V 5A 15-SIP FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 4V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 15-SIP, Exposed Tab, Formed Leads Supplier Device Package: 15-SIP	pacchetto: 15-SIP, Exposed Tab, Formed Leads	Azione22.968	Logic Level Gate	60V	5A	300 mOhm @ 3A, 4V	2V @ 250µA	-	320pF @ 10V	5W	150°C (TJ)	Through Hole	15-SIP, Exposed Tab, Formed Leads	15-SIP
IRF7341TRPBF	Infineon Technologies	MOSFET 2N-CH 55V 4.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione1.397.436	Logic Level Gate	55V	4.7A	50 mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
WI62195	Wise-Integration	GANFET 2P-CH 750V 9A 14QFN FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 9A (Tj) Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 6V Vgs(th) (Max) @ Id: 1.75V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 53.5pF @ 400V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-PowerLDFN Supplier Device Package: 14-PQFN (6x8)	pacchetto: -	Azione4.500	-	750V	9A (Tj)	250mOhm @ 2A, 6V	1.75V @ 10mA	1.9nC @ 6V	53.5pF @ 400V	-	-40°C ~ 150°C (TJ)	Surface Mount	14-PowerLDFN	14-PQFN (6x8)
DMN52D0UVT-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power - Max: 500µW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacchetto: -	Request a Quote	-	50V	430mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.4nC @ 10V	41pF @ 25V	500µW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMT3020UFDB-7	Diodes Incorporated	MOSFET 2N-CH 30V 6.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V Power - Max: 860mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	pacchetto: -	Request a Quote	-	30V	6.5A (Ta)	21mOhm @ 6A, 10V	1.7V @ 250µA	8.8nC @ 10V	383pF @ 15V	860mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMTH4014LDVWQ-7	Diodes Incorporated	MOSFET 2N-CH 40V 10.2A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Power - Max: 1.16W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXD)	pacchetto: -	Request a Quote	-	40V	10.2A (Ta), 27.5A (Tc)	15mOhm @ 20A, 10V	3V @ 250µA	11.2nC @ 10V	750pF @ 20V	1.16W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXD)
GSFN0207	Good-Ark Semiconductor	MOSFET 2P-CH 20V 7.5A 8PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Power - Max: 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PPAK (3.15x3.1)	pacchetto: -	Azione17.700	-	20V	7.5A (Tc)	33mOhm @ 4A, 4.5V	1V @ 250µA	25nC @ 4.5V	2100pF @ 15V	25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-PPAK (3.15x3.1)
DMN3022LFG-7	Diodes Incorporated	MOSFET 2N-CH 30V 7.6A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V Power - Max: 1.96W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	pacchetto: -	Request a Quote	-	30V	7.6A (Ta), 15A (Tc)	22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V	2.1V @ 250µA, 1.2V @ 250µA	3.7nC @ 4.5V, 8nC @ 4.5V	481pF @ 15V, 996pF @ 15V	1.96W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)
DMN3401LV-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 490mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Request a Quote	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 100µA	1.2nC @ 10V	50pF @ 15V	490mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MCACD55N04YHE3-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 935pF @ 25V Power - Max: 60W (Tj) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PDFN5060-8D	pacchetto: -	Request a Quote	-	40V	55A (Tc)	8.5mOhm @ 20A, 10V	4V @ 250µA	13nC @ 10V	935pF @ 25V	60W (Tj)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerLDFN	PDFN5060-8D
MCQ6005-TP	Micro Commercial Co	MOSFET 2N-CH 60V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 979pF @ 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Request a Quote	-	60V	5A	35mOhm @ 5A, 10V	2.5V @ 250µA	22nC @ 10V	979pF @ 30V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SMA5113	Sanken Electric USA Inc.	MOSFET 4N-CH 450V 7A 12SIP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Power - Max: 4W (Ta), 35W (Tc) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: 12-SIP Supplier Device Package: 12-SIP	pacchetto: -	Request a Quote	-	450V	7A (Ta)	1.1Ohm @ 3.5A, 10V	4V @ 1mA	-	720pF @ 10V	4W (Ta), 35W (Tc)	150°C	Through Hole	12-SIP	12-SIP
AO4840L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 40V 6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: -	Request a Quote	-	40V	6A (Ta)	31mOhm @ 6A, 10V	3V @ 250µA	8.3nC @ 10V	404pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI4936DY	Fairchild Semiconductor	MOSFET 2N-CH 30V 5.8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: -	Request a Quote	-	30V	5.8A (Ta)	37mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	460pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

SI4952DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 25V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione183.744

Logic Level Gate

25V

8A

23 mOhm @ 7A, 10V

2.2V @ 250µA

18nC @ 10V

680pF @ 13V

2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7958DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 7.2A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione15.876

Logic Level Gate

40V

7.2A

16.5 mOhm @ 11.3A, 10V

3V @ 250µA

75nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

APTM50TDUM65PG

Microsemi Corporation

MOSFET 6N-CH 500V 51A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione5.952

Standard

500V

51A

78 mOhm @ 25.5A, 10V

5V @ 2.5mA

140nC @ 10V

7000pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

VWM350-0075P

IXYS

MOSFET 6N-CH 75V 340A V2

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 340A
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 250A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: V2-PAK
Supplier Device Package: V2-PAK

pacchetto: V2-PAK

Azione6.672

Standard

75V

340A

3.3 mOhm @ 250A, 10V

4V @ 2mA

450nC @ 10V

-

-40°C ~ 175°C (TJ)

Through Hole

V2-PAK

FDZ2554P

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 6.5A BGA

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-WFBGA
Supplier Device Package: 18-BGA (2.5x4)

pacchetto: 18-WFBGA

Azione68.400

Logic Level Gate

20V

6.5A

28 mOhm @ 6.5A, 4.5V

1.5V @ 250µA

20nC @ 4.5V

1900pF @ 10V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

18-WFBGA

18-BGA (2.5x4)

STS3DNE60L

STMicroelectronics

MOSFET 2N-CH 60V 3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione336.732

Logic Level Gate

60V

3A

80 mOhm @ 1.5A, 10V

1V @ 250µA

13.5nC @ 4.5V

815pF @ 25V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM20DHM16T3G

Microsemi Corporation

MOSFET 2N-CH 200V 104A SP3

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione4.480

Standard

200V

104A

19 mOhm @ 52A, 10V

5V @ 2.5mA

140nC @ 10V

7220pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SI7872DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione1.201.320

Logic Level Gate

30V

6.4A

22 mOhm @ 7.5A, 10V

3V @ 250µA

11nC @ 4.5V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI4916DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 10A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione31.080

Logic Level Gate

30V

10A, 10.5A

18 mOhm @ 10A, 10V

3V @ 250µA

10nC @ 4.5V

-

3.3W, 3.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NVMFD5877NLT3G

ON Semiconductor

MOSFET 2N-CH 60V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6)

pacchetto: 8-PowerTDFN

Azione3.968

Logic Level Gate

60V

6A

39 mOhm @ 7.5A, 10V

3V @ 250µA

20nC @ 10V

540pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6)

DMC1030UFDB-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V U-DFN2020-6

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V
Power - Max: 1.36W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

pacchetto: 6-UDFN Exposed Pad

Azione2.832

Standard

12V

5.1A (Ta), 3.9A (Ta)

34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V

1V @ 250µA

12.2nC @ 4.5V, 13nC @ 4.5V

1003pF @ 6V, 1028pF @ 6V

1.36W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SQJ974EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 100V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione7.776

Standard

100V

30A (Tc)

25.5 mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V

1050pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SH8M4TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione27.000

Logic Level Gate

30V

9A, 7A

18 mOhm @ 9A, 10V

2.5V @ 1mA

15nC @ 5V

1190pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

CMLDM7003 TR

Central Semiconductor Corp

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacchetto: SOT-563, SOT-666

Azione28.920

Standard

50V

280mA

2 Ohm @ 50mA, 5V

1V @ 250µA

0.76nC @ 4.5V

50pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SLA5073

Sanken

MOSFET 6N-CH 60V 5A 15-SIP

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 4V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 15-SIP, Exposed Tab, Formed Leads
Supplier Device Package: 15-SIP

pacchetto: 15-SIP, Exposed Tab, Formed Leads

Azione22.968

Logic Level Gate

60V

5A

300 mOhm @ 3A, 4V

2V @ 250µA

-

320pF @ 10V

5W

150°C (TJ)

Through Hole

15-SIP, Exposed Tab, Formed Leads

15-SIP

IRF7341TRPBF

Infineon Technologies

MOSFET 2N-CH 55V 4.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione1.397.436

Logic Level Gate

55V

4.7A

50 mOhm @ 4.7A, 10V

1V @ 250µA

36nC @ 10V

740pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

WI62195

Wise-Integration

GANFET 2P-CH 750V 9A 14QFN

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 9A (Tj)
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 6V
Vgs(th) (Max) @ Id: 1.75V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 6V
Input Capacitance (Ciss) (Max) @ Vds: 53.5pF @ 400V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-PowerLDFN
Supplier Device Package: 14-PQFN (6x8)

pacchetto: -

Azione4.500

-

750V

9A (Tj)

250mOhm @ 2A, 6V

1.75V @ 10mA

1.9nC @ 6V

53.5pF @ 400V

-

-40°C ~ 150°C (TJ)

Surface Mount

14-PowerLDFN

14-PQFN (6x8)

DMN52D0UVT-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Power - Max: 500µW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

pacchetto: -

Request a Quote

-

50V

430mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.4nC @ 10V

41pF @ 25V

500µW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMT3020UFDB-7

Diodes Incorporated

MOSFET 2N-CH 30V 6.5A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
Power - Max: 860mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

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30V

6.5A (Ta)

21mOhm @ 6A, 10V

1.7V @ 250µA

8.8nC @ 10V

383pF @ 15V

860mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMTH4014LDVWQ-7

Diodes Incorporated

MOSFET 2N-CH 40V 10.2A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Power - Max: 1.16W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXD)

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40V

10.2A (Ta), 27.5A (Tc)

15mOhm @ 20A, 10V

3V @ 250µA

11.2nC @ 10V

750pF @ 20V

1.16W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXD)

GSFN0207

Good-Ark Semiconductor

MOSFET 2P-CH 20V 7.5A 8PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Power - Max: 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PPAK (3.15x3.1)

pacchetto: -

Azione17.700

-

20V

7.5A (Tc)

33mOhm @ 4A, 4.5V

1V @ 250µA

25nC @ 4.5V

2100pF @ 15V

25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-PPAK (3.15x3.1)

DMN3022LFG-7

Diodes Incorporated

MOSFET 2N-CH 30V 7.6A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
Power - Max: 1.96W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

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30V

7.6A (Ta), 15A (Tc)

22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V

2.1V @ 250µA, 1.2V @ 250µA

3.7nC @ 4.5V, 8nC @ 4.5V

481pF @ 15V, 996pF @ 15V

1.96W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)

DMN3401LV-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 490mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 100µA

1.2nC @ 10V

50pF @ 15V

490mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

MCACD55N04YHE3-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 935pF @ 25V
Power - Max: 60W (Tj)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PDFN5060-8D

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40V

55A (Tc)

8.5mOhm @ 20A, 10V

4V @ 250µA

13nC @ 10V

935pF @ 25V

60W (Tj)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerLDFN

PDFN5060-8D

MCQ6005-TP

Micro Commercial Co

MOSFET 2N-CH 60V 5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 979pF @ 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

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60V

5A

35mOhm @ 5A, 10V

2.5V @ 250µA

22nC @ 10V

979pF @ 30V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SMA5113

Sanken Electric USA Inc.

MOSFET 4N-CH 450V 7A 12SIP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Power - Max: 4W (Ta), 35W (Tc)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: 12-SIP
Supplier Device Package: 12-SIP

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450V

7A (Ta)

1.1Ohm @ 3.5A, 10V

4V @ 1mA

-

720pF @ 10V

4W (Ta), 35W (Tc)

150°C

Through Hole

12-SIP

AO4840L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 6A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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40V

6A (Ta)

31mOhm @ 6A, 10V

3V @ 250µA

8.3nC @ 10V

404pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI4936DY

Fairchild Semiconductor

MOSFET 2N-CH 30V 5.8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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30V

5.8A (Ta)

37mOhm @ 5.8A, 10V

1V @ 250µA

25nC @ 10V

460pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC