Pagina 11 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRL6372PBF	Infineon Technologies	MOSFET 2N-CH 30V 8.1A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione3.840	Logic Level Gate	30V	8.1A	17.9 mOhm @ 8.1A, 4.5V	1.1V @ 10µA	11nC @ 4.5V	1020pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BTS7904SAKSA1	Infineon Technologies	MOSFET N/P-CH 55V/30V 40A TO220 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V, 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Power - Max: 69W, 96W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-220-5 Supplier Device Package: PG-TO220-5-13	pacchetto: TO-220-5	Azione2.224	Logic Level Gate	55V, 30V	40A	12 mOhm @ 20A, 10V	2.2V @ 40µA	123nC @ 10V	6100pF @ 25V	69W, 96W	-55°C ~ 150°C (TJ)	Surface Mount	TO-220-5	PG-TO220-5-13
PMDPB760ENX	WeEn Semiconductors	MOSFET AXIAL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione6.896	-	-	-	-	-	-	-	-	-	-	-	-
RJM0603JSC-00#13	Renesas Electronics America	MOSFET 3N/3P-CH 60V 20A HSOP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Power - Max: 54W Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: 20-HSOP	pacchetto: 20-SOIC (0.433", 11.00mm Width) Exposed Pad	Azione5.280	Logic Level Gate, 4.5V Drive	60V	20A	20 mOhm @ 10A, 10V	2.5V @ 1mA	43nC @ 10V	2600pF @ 10V	54W	175°C	Surface Mount	20-SOIC (0.433", 11.00mm Width) Exposed Pad	20-HSOP
SQ9945AEY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 60V 3.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione1.401.312	Logic Level Gate	60V	3.7A	80 mOhm @ 3.7A, 10V	3V @ 250µA	20nC @ 10V	-	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4563DY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 40V 8A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V Power - Max: 3.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione133.716	Standard	40V	8A	16 mOhm @ 5A, 10V	2V @ 250µA	85nC @ 10V	2390pF @ 20V	3.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM10HM09FT3G	Microsemi Corporation	MOSFET 4N-CH 100V 139A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione4.032	Standard	100V	139A	10 mOhm @ 69.5A, 10V	4V @ 2.5mA	350nC @ 10V	9875pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
DMT3011LDT-7	Diodes Incorporated	MOSFET 2N-CH 30V 8A V-DFN3030-8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: V-DFN3030-8 (Type K)	pacchetto: 8-VDFN Exposed Pad	Azione6.592	Standard	30V	8A, 10.7A	20 mOhm @ 6A, 10V	3V @ 250µA	13.2nC @ 10V	641pF @ 15V	1.9W	-55°C ~ 155°C (TJ)	Surface Mount	8-VDFN Exposed Pad	V-DFN3030-8 (Type K)
DMC3021LSDQ-13	Diodes Incorporated	MOSFET N/P-CH 30V 8.5A/7A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione3.472	Logic Level Gate	30V	8.5A, 7A	21 mOhm @ 7A, 10V	2.1V @ 250µA	16.1nC @ 10V	767pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIA907EDJT-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC-70-6L FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	pacchetto: PowerPAK? SC-70-6 Dual	Azione146.412	Logic Level Gate	20V	4.5A (Tc)	57 mOhm @ 3.6A, 4.5V	1.4V @ 250µA	23nC @ 10V	-	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
FDG6321C	Fairchild/ON Semiconductor	MOSFET N/P-CH 25V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA, 410mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione1.107.624	Logic Level Gate	25V	500mA, 410mA	450 mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
SLA5086	Sanken	MOSFET 5P-CH 60V 5A 12-SIP FET Type: 5 P-Channel, Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	pacchetto: 12-SIP, Exposed Tab	Azione18.804	Logic Level Gate	60V	5A	220 mOhm @ 3A, 10V	2V @ 250µA	-	790pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
DMP2040UND-13	Diodes Incorporated	MOSFET 2P-CH 20V 5.3A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 13.6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXB)	pacchetto: -	Request a Quote	-	20V	5.3A (Ta), 13.6A (Tc)	36mOhm @ 8.9A, 4.5V	1.5V @ 250µA	20nC @ 10V	834pF @ 10V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXB)
UPA2451CTL-E1-A	Renesas Electronics Corporation	MOSFET 2N-CH 30V 8.2A 6HWSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 10V Power - Max: 700mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: 6-HWSON	pacchetto: -	Request a Quote	Logic Level Gate	30V	8.2A	20mOhm @ 4A, 4.5V	1.5V @ 1mA	6.3nC @ 4V	605pF @ 10V	700mW	-	Surface Mount	6-VFDFN Exposed Pad	6-HWSON
NTMC083NP10M5L	onsemi	MOSFET N/P-CH 100V 2.9A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 222pF @ 50V, 525pF @ 50V Power - Max: 1.6W (Ta), 3.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: -	Azione13.215	-	100V	2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)	83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V	-	5nC @ 10V, 8.4nC @ 10V	222pF @ 50V, 525pF @ 50V	1.6W (Ta), 3.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN31D5UDA-7B	Diodes Incorporated	MOSFET 2N-CH 0.4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	pacchetto: -	Azione23.988	-	-	400mA (Ta)	1.5Ohm @ 100mA, 4.5V	1V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
DMG6302UDW-13	Diodes Incorporated	MOSFET 2P-CH 25V 0.15A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 140mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.7pF @ 10V Power - Max: 310mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	25V	150mA (Ta)	10Ohm @ 140mA, 4.5V	1.5V @ 250µA	0.34nC @ 4.5V	30.7pF @ 10V	310mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BSS138BKSH	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.32A 6TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V Power - Max: 445mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	pacchetto: -	Azione3.843	Logic Level Gate	60V	320mA (Ta)	1.6Ohm @ 320mA, 10V	1.6V @ 250µA	0.7nC @ 4.5V	56pF @ 10V	445mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
FDS6986S	Fairchild Semiconductor	MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 695pF @ 10V, 1233pF @ 10V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: -	Request a Quote	Logic Level Gate	30V	6.5A, 7.9A	29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V	3V @ 250µA, 3V @ 1mA	9nC @ 5V, 16nC @ 5V	695pF @ 10V, 1233pF @ 10V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC62D2SVQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Request a Quote	-	60V	480mA (Ta), 320mA (Ta)	1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V	2.5V @ 250µA, 3V @ 250µA	1.04nC @ 10V, 1.1nC @ 10V	41pF @ 30V, 40pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
CMLDM3737-TR-PBFREE	Central Semiconductor Corp	MOSFET 2N-CH 20V 0.54A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Azione54.591	Logic Level Gate	20V	540mA	550mOhm @ 540mA, 4.5V	1V @ 250µA	1.58nC @ 4.5V	150pF @ 16V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FF23MR12W1M1PB11BPSA1	Infineon Technologies	MOSFET 2 IND 1200V 50A EASY1BM FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 5.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	pacchetto: -	Request a Quote	-	1200V (1.2kV)	50A	22.5mOhm @ 50A, 15V	5.5V @ 20mA	124nC @ 15V	3680pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1BM-2
SP8K22HZGTB	Rohm Semiconductor	MOSFET 2N-CH 45V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Azione7.260	-	45V	4.5A (Ta)	46mOhm @ 4.5A, 10V	2.5V @ 1mA	9.6nC @ 5V	550pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SP8K22FRATB	Rohm Semiconductor	MOSFET 2N-CH 45V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Request a Quote	-	45V	4.5A (Ta)	46mOhm @ 4.5A, 10V	2.5V @ 1mA	9.6nC @ 5V	550pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMP31D7LDWQ-13	Diodes Incorporated	MOSFET 2P-CH 30V 0.55A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	30V	550mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	0.8nC @ 10V	19pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC2710UDW-13	Diodes Incorporated	MOSFET N/P-CH 20V 0.75A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	20V	750mA (Ta), 600mA (Ta)	450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V, 0.7nC @ 4.5V	42pF @ 16V, 49pF @ 16V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN62D2UVT-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacchetto: -	Request a Quote	-	60V	455mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
NVLUD4C26NTAG	onsemi	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 720mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	pacchetto: -	Request a Quote	-	30V	4.8A (Ta)	21mOhm @ 6A, 10V	1.1V @ 250µA	9nC @ 4.5V	460pF @ 15V	720mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-UDFN (2x2)

IRL6372PBF

Infineon Technologies

MOSFET 2N-CH 30V 8.1A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione3.840

Logic Level Gate

30V

8.1A

17.9 mOhm @ 8.1A, 4.5V

1.1V @ 10µA

11nC @ 4.5V

1020pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BTS7904SAKSA1

Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO220

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V, 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
Power - Max: 69W, 96W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-220-5
Supplier Device Package: PG-TO220-5-13

pacchetto: TO-220-5

Azione2.224

Logic Level Gate

55V, 30V

40A

12 mOhm @ 20A, 10V

2.2V @ 40µA

123nC @ 10V

6100pF @ 25V

69W, 96W

-55°C ~ 150°C (TJ)

Surface Mount

TO-220-5

PG-TO220-5-13

PMDPB760ENX

WeEn Semiconductors

MOSFET AXIAL

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione6.896

-

RJM0603JSC-00#13

Renesas Electronics America

MOSFET 3N/3P-CH 60V 20A HSOP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
Power - Max: 54W
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package: 20-HSOP

pacchetto: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

Azione5.280

Logic Level Gate, 4.5V Drive

60V

20A

20 mOhm @ 10A, 10V

2.5V @ 1mA

43nC @ 10V

2600pF @ 10V

54W

175°C

Surface Mount

20-SOIC (0.433", 11.00mm Width) Exposed Pad

20-HSOP

SQ9945AEY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 60V 3.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione1.401.312

Logic Level Gate

60V

3.7A

80 mOhm @ 3.7A, 10V

3V @ 250µA

20nC @ 10V

-

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4563DY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 40V 8A 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione133.716

Standard

40V

8A

16 mOhm @ 5A, 10V

2V @ 250µA

85nC @ 10V

2390pF @ 20V

3.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM10HM09FT3G

Microsemi Corporation

MOSFET 4N-CH 100V 139A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione4.032

Standard

100V

139A

10 mOhm @ 69.5A, 10V

4V @ 2.5mA

350nC @ 10V

9875pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

DMT3011LDT-7

Diodes Incorporated

MOSFET 2N-CH 30V 8A V-DFN3030-8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: V-DFN3030-8 (Type K)

pacchetto: 8-VDFN Exposed Pad

Azione6.592

Standard

30V

8A, 10.7A

20 mOhm @ 6A, 10V

3V @ 250µA

13.2nC @ 10V

641pF @ 15V

1.9W

-55°C ~ 155°C (TJ)

Surface Mount

8-VDFN Exposed Pad

V-DFN3030-8 (Type K)

DMC3021LSDQ-13

Diodes Incorporated

MOSFET N/P-CH 30V 8.5A/7A 8-SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione3.472

Logic Level Gate

30V

8.5A, 7A

21 mOhm @ 7A, 10V

2.1V @ 250µA

16.1nC @ 10V

767pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIA907EDJT-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC-70-6L

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

pacchetto: PowerPAK? SC-70-6 Dual

Azione146.412

Logic Level Gate

20V

4.5A (Tc)

57 mOhm @ 3.6A, 4.5V

1.4V @ 250µA

23nC @ 10V

-

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

FDG6321C

Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA, 410mA
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione1.107.624

Logic Level Gate

25V

500mA, 410mA

450 mOhm @ 500mA, 4.5V

1.5V @ 250µA

2.3nC @ 4.5V

50pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

SLA5086

Sanken

MOSFET 5P-CH 60V 5A 12-SIP

FET Type: 5 P-Channel, Common Source
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

pacchetto: 12-SIP, Exposed Tab

Azione18.804

Logic Level Gate

60V

5A

220 mOhm @ 3A, 10V

2V @ 250µA

-

790pF @ 10V

5W

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

DMP2040UND-13

Diodes Incorporated

MOSFET 2P-CH 20V 5.3A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXB)

pacchetto: -

Request a Quote

-

20V

5.3A (Ta), 13.6A (Tc)

36mOhm @ 8.9A, 4.5V

1.5V @ 250µA

20nC @ 10V

834pF @ 10V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXB)

UPA2451CTL-E1-A

Renesas Electronics Corporation

MOSFET 2N-CH 30V 8.2A 6HWSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 10V
Power - Max: 700mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Supplier Device Package: 6-HWSON

pacchetto: -

Request a Quote

Logic Level Gate

30V

8.2A

20mOhm @ 4A, 4.5V

1.5V @ 1mA

6.3nC @ 4V

605pF @ 10V

700mW

-

Surface Mount

6-VFDFN Exposed Pad

6-HWSON

NTMC083NP10M5L

onsemi

MOSFET N/P-CH 100V 2.9A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 222pF @ 50V, 525pF @ 50V
Power - Max: 1.6W (Ta), 3.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: -

Azione13.215

-

100V

2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)

83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V

-

5nC @ 10V, 8.4nC @ 10V

222pF @ 50V, 525pF @ 50V

1.6W (Ta), 3.1W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN31D5UDA-7B

Diodes Incorporated

MOSFET 2N-CH 0.4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

pacchetto: -

Azione23.988

-

400mA (Ta)

1.5Ohm @ 100mA, 4.5V

1V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6

DMG6302UDW-13

Diodes Incorporated

MOSFET 2P-CH 25V 0.15A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 140mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30.7pF @ 10V
Power - Max: 310mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

Request a Quote

-

25V

150mA (Ta)

10Ohm @ 140mA, 4.5V

1.5V @ 250µA

0.34nC @ 4.5V

30.7pF @ 10V

310mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BSS138BKSH

Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V
Power - Max: 445mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

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Azione3.843

Logic Level Gate

60V

320mA (Ta)

1.6Ohm @ 320mA, 10V

1.6V @ 250µA

0.7nC @ 4.5V

56pF @ 10V

445mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

FDS6986S

Fairchild Semiconductor

MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 695pF @ 10V, 1233pF @ 10V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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Logic Level Gate

30V

6.5A, 7.9A

29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V

3V @ 250µA, 3V @ 1mA

9nC @ 5V, 16nC @ 5V

695pF @ 10V, 1233pF @ 10V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMC62D2SVQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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60V

480mA (Ta), 320mA (Ta)

1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V

2.5V @ 250µA, 3V @ 250µA

1.04nC @ 10V, 1.1nC @ 10V

41pF @ 30V, 40pF @ 25V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

CMLDM3737-TR-PBFREE

Central Semiconductor Corp

MOSFET 2N-CH 20V 0.54A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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Azione54.591

Logic Level Gate

20V

540mA

550mOhm @ 540mA, 4.5V

1V @ 250µA

1.58nC @ 4.5V

150pF @ 16V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FF23MR12W1M1PB11BPSA1

Infineon Technologies

MOSFET 2 IND 1200V 50A EASY1BM

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1BM-2

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-

1200V (1.2kV)

50A

22.5mOhm @ 50A, 15V

5.5V @ 20mA

124nC @ 15V

3680pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1BM-2

SP8K22HZGTB

Rohm Semiconductor

MOSFET 2N-CH 45V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: -

Azione7.260

-

45V

4.5A (Ta)

46mOhm @ 4.5A, 10V

2.5V @ 1mA

9.6nC @ 5V

550pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SP8K22FRATB

Rohm Semiconductor

MOSFET 2N-CH 45V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

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-

45V

4.5A (Ta)

46mOhm @ 4.5A, 10V

2.5V @ 1mA

9.6nC @ 5V

550pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMP31D7LDWQ-13

Diodes Incorporated

MOSFET 2P-CH 30V 0.55A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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-

30V

550mA (Ta)

900mOhm @ 420mA, 10V

2.6V @ 250µA

0.8nC @ 10V

19pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC2710UDW-13

Diodes Incorporated

MOSFET N/P-CH 20V 0.75A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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-

20V

750mA (Ta), 600mA (Ta)

450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V, 0.7nC @ 4.5V

42pF @ 16V, 49pF @ 16V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMN62D2UVT-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

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60V

455mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

NVLUD4C26NTAG

onsemi

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power - Max: 720mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-UDFN (2x2)

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30V

4.8A (Ta)

21mOhm @ 6A, 10V

1.1V @ 250µA

9nC @ 4.5V

460pF @ 15V

720mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-UDFN (2x2)