Pagina 10 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  10/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot BSO350N03
Infineon Technologies

MOSFET 2N-CH 30V 5A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 6µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione32.172
Logic Level Gate
30V
5A
35 mOhm @ 6A, 10V
2V @ 6µA
3.7nC @ 5V
480pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
hot IRF7102
Infineon Technologies

MOSFET 2N-CH 50V 2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione39.600
Standard
50V
2A
300 mOhm @ 1.5A, 10V
3V @ 250µA
6.6nC @ 10V
120pF @ 25V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AON2880
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7A DFN2X2

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (2x2)
pacchetto: 8-WFDFN Exposed Pad
Azione7.104
Logic Level Gate
20V
7A
21.5 mOhm @ 5A, 4.5V
1V @ 250µA
9nC @ 4.5V
600pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-WFDFN Exposed Pad
8-DFN-EP (2x2)
SI4388DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 10.7A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V
  • Power - Max: 3.3W, 3.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.100
Standard
30V
10.7A, 11.3A
16 mOhm @ 8A, 10V
3V @ 250µA
27nC @ 10V
946pF @ 15V
3.3W, 3.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXMC3A18DN8TA
Diodes Incorporated

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.8A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione468.708
Logic Level Gate
30V
5.8A, 4.8A
25 mOhm @ 5.8A, 10V
1V @ 250µA (Min)
36nC @ 10V
1800pF @ 25V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot NDS9925A
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 4.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione31.800
Logic Level Gate
20V
4.5A
60 mOhm @ 4.5A, 4.5V
1V @ 250µA
-
-
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF7306PBF
Infineon Technologies

MOSFET 2P-CH 30V 3.6A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.664
Logic Level Gate
30V
3.6A
100 mOhm @ 1.8A, 10V
1V @ 250µA
25nC @ 10V
440pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD111910PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 8DIP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.584
-
-
-
-
-
-
-
-
-
-
-
-
FW297-TL-2W
ON Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
  • Power - Max: 1.8W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: -
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.592
Logic Level Gate, 4V Drive
60V
4.5A
58 mOhm @ 4.5A, 10V
2.6V @ 1mA
14nC @ 10V
750pF @ 20V
1.8W
150°C (TJ)
-
8-SOIC (0.154", 3.90mm Width)
8-SOIC
TSM2537CQ RFG
TSC America Inc.

MOSFET, COMPLEMENTARY, N-CHANNEL

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V
  • Power - Max: 6.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-TDFN (2x2)
pacchetto: 6-VDFN Exposed Pad
Azione3.408
Standard
20V
11.6A (Tc), 9A (Tc)
30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V
1V @ 250µA
9.1nC @ 4.5V, 9.8nC @ 4.5V
677pF @ 10V, 744pF @ 10V
6.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-TDFN (2x2)
BUK7K6R2-40EX
Nexperia USA Inc.

MOSFET 2N-CH 40V 40A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
  • Power - Max: 68W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: SOT-1205, 8-LFPAK56
Azione3.136
Standard
40V
40A
5.8 mOhm @ 20A, 10V
4V @ 1mA
32.3nC @ 10V
2210pF @ 25V
68W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot BSO615C G
Infineon Technologies

MOSFET N/P-CH 60V 3.1A/2A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione144.288
Logic Level Gate
60V
3.1A, 2A
110 mOhm @ 3.1A, 10V
2V @ 20µA
22.5nC @ 10V
380pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
FDSS2407
Fairchild/ON Semiconductor

MOSFET 2N-CH 62V 3.3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 62V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
  • Power - Max: 2.27W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.896
Logic Level Gate
62V
3.3A
110 mOhm @ 3.3A, 10V
3V @ 250µA
4.3nC @ 5V
300pF @ 15V
2.27W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
MCQ05N06-TP
Micro Commercial Co

MOSFET 2N-CH 60V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Request a Quote
-
60V
5A
45mOhm @ 5A, 10V
3V @ 250µA
12nC @ 10V
500pF @ 30V
1.7W
-55°C ~ 150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MCH6644-C-TL-E
onsemi

PCH+NCH 4V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMC3020UDVW-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
  • Power - Max: 1.18W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
pacchetto: -
Request a Quote
-
30V
20A (Tc), 17A (Tc)
31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
1.85V @ 250µA, 2.1V @ 250µA
8.8nC @ 10V, 13.6nC @ 10V
383pF @ 15V, 782pF @ 15V
1.18W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)
MSCSM120HRM311AG
Microchip Technology

SIC 4N-CH 1200V/700V 89A/124A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc), 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA, 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, 4500pF @ 700V
  • Power - Max: 395W (Tc), 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV), 700V
89A (Tc), 124A (Tc)
31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V
2.8V @ 3mA, 2.4V @ 4mA
232nC @ 20V, 215nC @ 20V
3020pF @ 1000V, 4500pF @ 700V
395W (Tc), 365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
DMP2056UCA4-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V X4-DSN0808-

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN
  • Supplier Device Package: X4-DSN0808-4
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
Surface Mount
4-XFDFN
X4-DSN0808-4
IAUC60N04S6L030HATMA1
Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
  • Power - Max: 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-56
pacchetto: -
Request a Quote
Logic Level Gate
40V
60A (Tj)
3mOhm @ 30A, 10V
2V @ 25µA
35nC @ 10V
2128pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
UPA2350T1P-E4-A
Renesas Electronics Corporation

MOSFET 2N-CH 20V 6A LGA

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 10V
  • Power - Max: 1.3W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA
  • Supplier Device Package: 4-EFLIP-LGA (1.62x1.62)
pacchetto: -
Request a Quote
Logic Level Gate, 2.5V Drive
20V
6A (Ta)
35mOhm @ 3A, 4.5V
1.5V @ 1mA
8.6nC @ 4V
542pF @ 10V
1.3W (Ta)
150°C
Surface Mount
4-XFBGA
4-EFLIP-LGA (1.62x1.62)
PSMN011-60HLX
Nexperia USA Inc.

MOSFET 2N-CH 60V 35A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
  • Power - Max: 68W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: -
Azione4.800
Logic Level Gate
60V
35A (Ta)
10.7mOhm @ 15A, 10V
2.1V @ 1mA
24.5nC @ 5V
3470pF @ 25V
68W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
PJS6833_S2_00001
Panjit International Inc.

MOSFET 2P-CH 30V 1.1A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 15V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacchetto: -
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-
30V
1.1A (Ta)
370mOhm @ 1.1A, 4.5V
1.3V @ 250µA
1.6nC @ 4.5V
125pF @ 15V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
DMN3401LVQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 490mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Azione17.700
-
30V
800mA (Ta)
400mOhm @ 590mA, 10V
1.6V @ 100µA
1.2nC @ 10V
50pF @ 15V
490mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NP30N06QDK-E1-AY
Renesas Electronics Corporation

MOSFET 2N-CH 60V 30A 8HSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Power - Max: 1W (Ta), 59W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: 8-HSON (5x5.4)
pacchetto: -
Azione14.865
-
60V
30A (Tc)
14mOhm @ 15A, 10V
2.5V @ 250µA
38nC @ 10V
2250pF @ 25V
1W (Ta), 59W (Tc)
175°C
Surface Mount
8-PowerLDFN
8-HSON (5x5.4)
KFC6B21B70LE
Nuvoton Technology Corporation

DUAL NCH MOSFET 12V, 9.0A, 4.6MO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFLGA, CSP
  • Supplier Device Package: 6-CSP (1.24x1.89)
pacchetto: -
Azione3.000
-
12V
9A (Ta)
5.5mOhm @ 4.5A, 4.5V
1.4V @ 260µA
15nC @ 4V
1810pF @ 10V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-XFLGA, CSP
6-CSP (1.24x1.89)
QH8JB5TCR
Rohm Semiconductor

MOSFET 2P-CH 40V 5A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: -
Azione7.404
-
40V
5A (Ta)
41mOhm @ 5A, 10V
2.5V @ 1mA
17.2nC @ 10V
920pF @ 20V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
FDMD8440L
onsemi

MOSFET 2N-CH 40V 21A PWR 3.3X5

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
  • Power - Max: 2.1W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Power 3.3x5
pacchetto: -
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-
40V
21A (Ta), 87A (Tc)
2.6mOhm @ 21A, 10V
3V @ 250µA
62nC @ 10V
4150pF @ 20V
2.1W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
Power 3.3x5
FF6MR12W2M1B11BOMA1
Infineon Technologies

SIC 2N-CH 1200V AG-EASY2BM-2

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
  • Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2BM-2
pacchetto: -
Request a Quote
-
1200V (1.2kV)
200A (Tj)
5.63mOhm @ 200A, 15V
5.55V @ 80mA
496nC @ 15V
14700pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY2BM-2