Pagina 133 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SIF912EDZ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 7.4A 6-POWERPAK FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 2x5 Supplier Device Package: PowerPAK? (2x5)	pacchetto: PowerPAK? 2x5	Azione1.429.632	Logic Level Gate	30V	7.4A	19 mOhm @ 7.4A, 4.5V	1.5V @ 250µA	15nC @ 4.5V	-	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 2x5	PowerPAK? (2x5)
SI4908DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V Power - Max: 2.75W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione363.036	Standard	40V	5A	60 mOhm @ 4.1A, 10V	2.2V @ 250µA	12nC @ 10V	355pF @ 20V	2.75W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMN2A04DN8TC	Diodes Incorporated	MOSFET 2N-CH 20V 5.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.9A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione384.684	Logic Level Gate	20V	5.9A	25 mOhm @ 5.9A, 4.5V	700mV @ 250µA (Min)	22.1nC @ 5V	1880pF @ 10V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AUIRFN8459TR	Infineon Technologies	MOSFET 2N-CH 40V 50A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PQFN (5x6)	pacchetto: 8-PowerTDFN	Azione6.864	Standard	40V	50A	5.9 mOhm @ 40A, 10V	3.9V @ 50µA	60nC @ 10V	2250pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)
APTM20HM20STG	Microsemi Corporation	MOSFET 4N-CH 200V 89A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 89A Rds On (Max) @ Id, Vgs: 24 mOhm @ 44.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione7.648	Standard	200V	89A	24 mOhm @ 44.5A, 10V	5V @ 2.5mA	112nC @ 10V	6850pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
DMNH4015SSD-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V SO-8 FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione6.064	Standard	-	11A (Ta)	15 mOhm @ 12A, 10V	3V @ 250µA	15nC @ 4.5V	1938pF @ 15V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NVLJD4007NZTBG	ON Semiconductor	MOSFET 2N-CH 30V 0.245A WDFN6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 245mA Rds On (Max) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Power - Max: 755mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	pacchetto: 6-WDFN Exposed Pad	Azione4.640	Logic Level Gate	30V	245mA	7 Ohm @ 125mA, 4.5V	1.5V @ 100µA	0.75nC @ 4.5V	20pF @ 5V	755mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
EFC4619R-TR	ON Semiconductor	MOSFET 2N-CH EFCP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Supplier Device Package: 4-EFCP (1.61x1.61)	pacchetto: 4-XFBGA	Azione161.100	Logic Level Gate, 2.5V Drive	-	-	-	-	21.7nC @ 4.5V	-	1.6W	150°C (TJ)	Surface Mount	4-XFBGA	4-EFCP (1.61x1.61)
SI5922DU-T1-GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 30V CHIPFET FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 15V Power - Max: 10.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	pacchetto: PowerPAK? ChipFET? Dual	Azione2.576	Standard	30V	6A (Tc)	19.2 mOhm @ 5A, 10V	2.2V @ 250µA	7.1nC @ 4.5V	765pF @ 15V	10.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
SI5999EDU-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 6A POWERPAK FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V Power - Max: 10.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	pacchetto: PowerPAK? ChipFET? Dual	Azione6.480	Logic Level Gate	20V	6A	59 mOhm @ 3.5A, 4.5V	1.5V @ 250µA	20nC @ 10V	496pF @ 10V	10.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
FDMS7602S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/17A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	pacchetto: 8-PowerWDFN	Azione674.016	Logic Level Gate	30V	12A, 17A	7.5 mOhm @ 12A, 10V	3V @ 250µA	28nC @ 10V	1750pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
SI4936CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione645.084	Logic Level Gate	30V	5.8A	40 mOhm @ 5A, 10V	3V @ 250µA	9nC @ 10V	325pF @ 15V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ940EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 15A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 896pF @ 20V Power - Max: 48W, 43W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric	pacchetto: PowerPAK? SO-8 Dual	Azione6.624	Logic Level Gate	40V	15A (Ta), 18A (Tc)	16 mOhm @ 15A, 10V	2.5V @ 250µA	20nC @ 20V	896pF @ 20V	48W, 43W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual Asymmetric
UP0187B00L	Panasonic Electronic Components	MOSFET 2N-CH 30V 0.1A SSMINI-5 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Power - Max: 125mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: SSMini5-F2	pacchetto: SOT-665	Azione480.000	Logic Level Gate	30V	100mA	8 Ohm @ 10mA, 4V	1.5V @ 1µA	-	12pF @ 3V	125mW	125°C (TJ)	Surface Mount	SOT-665	SSMini5-F2
SIA929DJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 4.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	pacchetto: PowerPAK? SC-70-6 Dual	Azione108.012	Logic Level Gate	30V	4.5A (Tc)	64 mOhm @ 3A, 10V	1.1V @ 250µA	21nC @ 10V	575pF @ 15V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
DMN1033UCB4-7	Diodes Incorporated	MOSFET 2N-CH 12V U-WLB1818-4 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.45W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLBGA Supplier Device Package: U-WLB1818-4	pacchetto: 4-UFBGA, WLBGA	Azione28.668	Logic Level Gate	-	-	-	-	37nC @ 4.5V	-	1.45W	-55°C ~ 150°C (TJ)	Surface Mount	4-UFBGA, WLBGA	U-WLB1818-4
FDS4935A	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 7A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione214.440	Logic Level Gate	30V	7A	23 mOhm @ 7A, 10V	3V @ 250µA	21nC @ 5V	1233pF @ 15V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1922EDH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione722.952	Logic Level Gate	20V	1.3A	198 mOhm @ 1A, 4.5V	1V @ 250µA	2.5nC @ 8V	-	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SH8K10SGZETB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A/8.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8.5A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V, 17.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V, 830pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Azione7.425	-	30V	7A (Ta), 8.5A (Ta)	24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V	2.5V @ 1mA	16.8nC @ 5V, 17.8nC @ 5V	660pF @ 10V, 830pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN52D0UVT-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power - Max: 500µW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacchetto: -	Request a Quote	-	50V	430mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.4nC @ 10V	41pF @ 25V	500µW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SI1900DL-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 0.63A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta), 590mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 300mW, 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	pacchetto: -	Azione9.000	-	30V	630mA (Ta), 590mA (Ta)	480mOhm @ 590mA, 10V	3V @ 250µA	1.4nC @ 10V	-	300mW, 270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
APM4953	UMW	MOSFET 30V 5.3A 8SOP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 504pF @ 15V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Azione2.403	-	30V	5.3A (Ta)	41mOhm @ 5.3A, 10V	2.5V @ 250µA	12nC @ 10V	504pF @ 15V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
UPA2590T1H-T1-AT	Renesas Electronics Corporation	MOSFET N/P-CH 30V 4.5A 8VSOF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1.24W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-VSOF	pacchetto: -	Request a Quote	Logic Level Gate	30V	4.5A	50mOhm @ 2A, 10V	2.5V @ 1mA	6.6nC @ 10V	310pF @ 10V	1.24W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-VSOF
IRF7314QTRPBF	Infineon Technologies	MOSFET 2P-CH 20V 5.2A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 58mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V Power - Max: 2.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: -	Request a Quote	Logic Level Gate	20V	5.2A	58mOhm @ 5.2A, 4.5V	700mV @ 250µA	29nC @ 4.5V	913pF @ 15V	2.4W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ208EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V, 3900pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	pacchetto: -	Request a Quote	-	40V	20A (Tc), 60A (Tc)	9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V	2.3V @ 250µA, 2.4V @ 250µA	33nC @ 10V, 75nC @ 10V	1700pF @ 25V, 3900pF @ 25V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
NTK3142PT1H-ON	onsemi	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PSMN033-100HLX	Nexperia USA Inc.	MOSFET 2N-CH 100V 26A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	pacchetto: -	Azione4.734	Logic Level Gate	100V	26A (Ta)	31mOhm @ 5A, 10V	2.1V @ 1mA	27.3nC @ 5V	3168pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
2N7002DWS-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.247A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 247mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Azione9.000	-	60V	247mA (Ta)	4Ohm @ 500mA, 10V	2.5V @ 250µA	0.4nC @ 4.5V	41pF @ 25V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363

SIF912EDZ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 7.4A 6-POWERPAK

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 2x5
Supplier Device Package: PowerPAK? (2x5)

pacchetto: PowerPAK? 2x5

Azione1.429.632

Logic Level Gate

30V

7.4A

19 mOhm @ 7.4A, 4.5V

1.5V @ 250µA

15nC @ 4.5V

-

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 2x5

PowerPAK? (2x5)

SI4908DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Power - Max: 2.75W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione363.036

Standard

40V

5A

60 mOhm @ 4.1A, 10V

2.2V @ 250µA

12nC @ 10V

355pF @ 20V

2.75W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMN2A04DN8TC

Diodes Incorporated

MOSFET 2N-CH 20V 5.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione384.684

Logic Level Gate

20V

5.9A

25 mOhm @ 5.9A, 4.5V

700mV @ 250µA (Min)

22.1nC @ 5V

1880pF @ 10V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AUIRFN8459TR

Infineon Technologies

MOSFET 2N-CH 40V 50A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)

pacchetto: 8-PowerTDFN

Azione6.864

Standard

40V

50A

5.9 mOhm @ 40A, 10V

3.9V @ 50µA

60nC @ 10V

2250pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PQFN (5x6)

APTM20HM20STG

Microsemi Corporation

MOSFET 4N-CH 200V 89A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 89A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 44.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione7.648

Standard

200V

89A

24 mOhm @ 44.5A, 10V

5V @ 2.5mA

112nC @ 10V

6850pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

DMNH4015SSD-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V SO-8

FET Type: 2 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione6.064

Standard

-

11A (Ta)

15 mOhm @ 12A, 10V

3V @ 250µA

15nC @ 4.5V

1938pF @ 15V

-

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NVLJD4007NZTBG

ON Semiconductor

MOSFET 2N-CH 30V 0.245A WDFN6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 245mA
Rds On (Max) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Power - Max: 755mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

pacchetto: 6-WDFN Exposed Pad

Azione4.640

Logic Level Gate

30V

245mA

7 Ohm @ 125mA, 4.5V

1.5V @ 100µA

0.75nC @ 4.5V

20pF @ 5V

755mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

EFC4619R-TR

ON Semiconductor

MOSFET 2N-CH EFCP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Supplier Device Package: 4-EFCP (1.61x1.61)

pacchetto: 4-XFBGA

Azione161.100

Logic Level Gate, 2.5V Drive

-

21.7nC @ 4.5V

-

1.6W

150°C (TJ)

Surface Mount

4-XFBGA

4-EFCP (1.61x1.61)

SI5922DU-T1-GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 30V CHIPFET

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 15V
Power - Max: 10.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

pacchetto: PowerPAK? ChipFET? Dual

Azione2.576

Standard

30V

6A (Tc)

19.2 mOhm @ 5A, 10V

2.2V @ 250µA

7.1nC @ 4.5V

765pF @ 15V

10.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

SI5999EDU-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 6A POWERPAK

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 496pF @ 10V
Power - Max: 10.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

pacchetto: PowerPAK? ChipFET? Dual

Azione6.480

Logic Level Gate

20V

6A

59 mOhm @ 3.5A, 4.5V

1.5V @ 250µA

20nC @ 10V

496pF @ 10V

10.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

FDMS7602S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/17A POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

pacchetto: 8-PowerWDFN

Azione674.016

Logic Level Gate

30V

12A, 17A

7.5 mOhm @ 12A, 10V

3V @ 250µA

28nC @ 10V

1750pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

SI4936CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione645.084

Logic Level Gate

30V

5.8A

40 mOhm @ 5A, 10V

3V @ 250µA

9nC @ 10V

325pF @ 15V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ940EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 15A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 896pF @ 20V
Power - Max: 48W, 43W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric

pacchetto: PowerPAK? SO-8 Dual

Azione6.624

Logic Level Gate

40V

15A (Ta), 18A (Tc)

16 mOhm @ 15A, 10V

2.5V @ 250µA

20nC @ 20V

896pF @ 20V

48W, 43W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

PowerPAK? SO-8 Dual Asymmetric

UP0187B00L

Panasonic Electronic Components

MOSFET 2N-CH 30V 0.1A SSMINI-5

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Power - Max: 125mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-665
Supplier Device Package: SSMini5-F2

pacchetto: SOT-665

Azione480.000

Logic Level Gate

30V

100mA

8 Ohm @ 10mA, 4V

1.5V @ 1µA

-

12pF @ 3V

125mW

125°C (TJ)

Surface Mount

SOT-665

SSMini5-F2

SIA929DJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 4.5A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

pacchetto: PowerPAK? SC-70-6 Dual

Azione108.012

Logic Level Gate

30V

4.5A (Tc)

64 mOhm @ 3A, 10V

1.1V @ 250µA

21nC @ 10V

575pF @ 15V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

DMN1033UCB4-7

Diodes Incorporated

MOSFET 2N-CH 12V U-WLB1818-4

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.45W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLBGA
Supplier Device Package: U-WLB1818-4

pacchetto: 4-UFBGA, WLBGA

Azione28.668

Logic Level Gate

-

37nC @ 4.5V

-

1.45W

-55°C ~ 150°C (TJ)

Surface Mount

4-UFBGA, WLBGA

U-WLB1818-4

FDS4935A

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 7A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione214.440

Logic Level Gate

30V

7A

23 mOhm @ 7A, 10V

3V @ 250µA

21nC @ 5V

1233pF @ 15V

900mW

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1922EDH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione722.952

Logic Level Gate

20V

1.3A

198 mOhm @ 1A, 4.5V

1V @ 250µA

2.5nC @ 8V

-

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SH8K10SGZETB

Rohm Semiconductor

MOSFET 2N-CH 30V 7A/8.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V, 17.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V, 830pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: -

Azione7.425

-

30V

7A (Ta), 8.5A (Ta)

24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V

2.5V @ 1mA

16.8nC @ 5V, 17.8nC @ 5V

660pF @ 10V, 830pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN52D0UVT-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Power - Max: 500µW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

pacchetto: -

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-

50V

430mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.4nC @ 10V

41pF @ 25V

500µW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

SI1900DL-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 0.63A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta), 590mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 300mW, 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

pacchetto: -

Azione9.000

-

30V

630mA (Ta), 590mA (Ta)

480mOhm @ 590mA, 10V

3V @ 250µA

1.4nC @ 10V

-

300mW, 270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

APM4953

UMW

MOSFET 30V 5.3A 8SOP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 504pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: -

Azione2.403

-

30V

5.3A (Ta)

41mOhm @ 5.3A, 10V

2.5V @ 250µA

12nC @ 10V

504pF @ 15V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

UPA2590T1H-T1-AT

Renesas Electronics Corporation

MOSFET N/P-CH 30V 4.5A 8VSOF

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Power - Max: 1.24W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-VSOF

pacchetto: -

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Logic Level Gate

30V

4.5A

50mOhm @ 2A, 10V

2.5V @ 1mA

6.6nC @ 10V

310pF @ 10V

1.24W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-VSOF

IRF7314QTRPBF

Infineon Technologies

MOSFET 2P-CH 20V 5.2A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
Power - Max: 2.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: -

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Logic Level Gate

20V

5.2A

58mOhm @ 5.2A, 4.5V

700mV @ 250µA

29nC @ 4.5V

913pF @ 15V

2.4W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ208EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V, 3900pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

pacchetto: -

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-

40V

20A (Tc), 60A (Tc)

9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V

2.3V @ 250µA, 2.4V @ 250µA

33nC @ 10V, 75nC @ 10V

1700pF @ 25V, 3900pF @ 25V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

NTK3142PT1H-ON

onsemi

MOSFET P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

PSMN033-100HLX

Nexperia USA Inc.

MOSFET 2N-CH 100V 26A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Power - Max: 64W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

pacchetto: -

Azione4.734

Logic Level Gate

100V

26A (Ta)

31mOhm @ 5A, 10V

2.1V @ 1mA

27.3nC @ 5V

3168pF @ 25V

64W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

2N7002DWS-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.247A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 247mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

Azione9.000

-

60V

247mA (Ta)

4Ohm @ 500mA, 10V

2.5V @ 250µA

0.4nC @ 4.5V

41pF @ 25V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363