Pagina 131 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559-827
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Transistor - FET, MOSFET - Array

Record 5.684
Pagina  131/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EFC8822R-X-TF
ON Semiconductor

MOSFET N-CH DUAL 6CSP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.608
-
-
-
-
-
-
-
-
-
-
-
-
hot SI6966EDQ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione149.952
Logic Level Gate
20V
-
30 mOhm @ 5.2A, 4.5V
600mV @ 250µA (Min)
25nC @ 4.5V
-
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDW2521C
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 8-TSSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 3.8A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V
  • Power - Max: 600mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione78.804
Logic Level Gate
20V
5.5A, 3.8A
21 mOhm @ 5.5A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
1082pF @ 10V
600mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
ZXMN3A06N8TA
Diodes Incorporated

MOSFET 2N-CH 30V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.080
Standard
30V
-
-
-
-
-
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ZXMN3A06DN8TC
Diodes Incorporated

MOSFET 2N-CH 30V 4.9A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione363.912
Logic Level Gate
30V
4.9A
35 mOhm @ 9A, 10V
1V @ 250µA (Min)
17.5nC @ 10V
796pF @ 25V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
NTMC1300R2
ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A, 1.8A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.792
Logic Level Gate
30V
2.2A, 1.8A
90 mOhm @ 3A, 10V
2.2V @ 250µA
5nC @ 4.5V
300pF @ 20V
2W
-65°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
BSL214NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 20V 1.5A 6TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione5.568
Logic Level Gate, 2.5V Drive
20V
1.5A
140 mOhm @ 1.5A, 4.5V
1.2V @ 3.7µA
0.8nC @ 5V
143pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
DMN3055LFDB-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

  • FET Type: 2 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: 6-UDFN Exposed Pad
Azione4.960
Standard
-
5A (Ta)
40 mOhm @ 3A, 4.5V
1.5V @ 250µA
5.3nC @ 4.5V
458pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
TSM3911DCX6 RFG
TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -20V, -

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: SOT-23-6
Azione2.608
Standard
20V
2.2A (Ta)
140 mOhm @ 2.2A, 4.5V
950mV @ 250µA
15.23nC @ 4.5V
882.51pF @ 6V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
ALD310702PCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 180mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
pacchetto: 16-DIP (0.300", 7.62mm)
Azione7.760
Standard
8V
-
-
180mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
NX7002AKS,115
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.17A SC-88

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 170mA
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
  • Power - Max: 220mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione27.186
Logic Level Gate
60V
170mA
4.5 Ohm @ 100mA, 10V
2.1V @ 250µA
0.43nC @ 4.5V
17pF @ 10V
220mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
CMLDM5757 TR
Central Semiconductor Corp

MOSFET 2P-CH 20V 430MA SOT563

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 430mA
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione27.852
Logic Level Gate
20V
430mA
900 mOhm @ 430mA, 4.5V
1V @ 250µA
1.2nC @ 4.5V
175pF @ 16V
350mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
TSM250N02DCQ
Taiwan Semiconductor Corporation

MOSFET 2N-CH 20V 5.8A 6TDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 0.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
  • Power - Max: 620mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-TDFN (2x2)
pacchetto: -
Request a Quote
-
20V
5.8A (Tc)
25mOhm @ 4A, 4.5V
0.8V @ 250µA
11nC @ 4.5V
775pF @ 10V
620mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-TDFN (2x2)
SQJQ906E-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 95A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
pacchetto: -
Azione5.166
-
40V
95A (Tc)
3.3mOhm @ 5A, 10V
3.5V @ 250µA
42nC @ 10V
3600pF @ 20V
50W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
AOC2804B
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 4DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN
  • Supplier Device Package: 4-DFN (1.5x1.5)
pacchetto: -
Request a Quote
-
-
-
-
1.3V @ 250µA
9.5nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
4-XDFN
4-DFN (1.5x1.5)
SCH2817-TL-H
onsemi

NCH+SBD 1.8V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
PSMN9R3-60HSX
Nexperia USA Inc.

MOSFET 2N-CH 60V 40A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V
  • Power - Max: 68W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: -
Azione4.710
-
60V
40A (Ta)
9.3mOhm @ 10A, 10V
4V @ 1mA
34.2nC @ 10V
2348pF @ 25V
68W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
CTLDM303N-M832DS-BK
Central Semiconductor Corp

MOSFET 2N-CH 30V 3.6A TLM832DS

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 1.65W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
pacchetto: -
Request a Quote
-
30V
3.6A (Ta)
40mOhm @ 1.8A, 4.5V
1.25V @ 250µA
13nC @ 4.5V
590pF @ 10V
1.65W
-55°C ~ 150°C (TJ)
Surface Mount
8-TDFN Exposed Pad
TLM832DS
NVMFD027N10MCLT1G
onsemi

PTNG 100V LL SO8FL DUAL

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 38µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
  • Power - Max: 3.1W (Ta), 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacchetto: -
Request a Quote
-
100V
7.4A (Ta), 28A (Tc)
26mOhm @ 7A, 10V
3V @ 38µA
11nC @ 10V
720pF @ 50V
3.1W (Ta), 46W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
AOC3878
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 35A 10DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-AlphaDFN (3.55x1.77)
pacchetto: -
Request a Quote
-
12V
35A (Ta)
2Ohm @ 5A, 4.5V
1.1V @ 250µA
60nC @ 4.5V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
10-SMD, No Lead
10-AlphaDFN (3.55x1.77)
DMN33D8LVQ-13
Diodes Incorporated

MOSFET 2N-CH 30V 0.35A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
  • Power - Max: 430mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Azione29.589
Logic Level Gate
30V
350mA (Ta)
2.4Ohm @ 250mA, 10V
1.5V @ 100µA
1.23nC @ 10V
48pF @ 5V
430mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
SSM6N55NU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN (2x2)
pacchetto: -
Azione1.455
Logic Level Gate
30V
4A
46mOhm @ 4A, 10V
2.5V @ 100µA
2.5nC @ 4.5V
280pF @ 15V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-µDFN (2x2)
DMC62D2SV-13
Diodes Incorporated

MOSFET N/P-CH 60V 0.48A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Request a Quote
-
60V
480mA (Ta), 320mA (Ta)
1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
2.5V @ 250µA, 3V @ 250µA
1.04nC @ 10V, 1.1nC @ 10V
41pF @ 30V, 40pF @ 25V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NXV08H250DPT2
onsemi

APM17-MFA, MV7 80V, AL2O3, 2 PHA

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V
  • Vgs(th) (Max) @ Id: 4.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 17-PowerDIP Module (2.020", 51.30mm)
  • Supplier Device Package: APM17-MFA
pacchetto: -
Request a Quote
-
80V
-
0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V
4.6V @ 1mA
320nC @ 10V
24350pF @ 40V
-
-40°C ~ 125°C
Through Hole
17-PowerDIP Module (2.020", 51.30mm)
APM17-MFA
DMT6011LPDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 10.3A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 30V
  • Power - Max: 2.5W (Ta), 37.9W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
pacchetto: -
Request a Quote
-
60V
10.3A (Ta), 40A (Tc)
14mOhm @ 10A, 10V
2.5V @ 250µA
22.2nC @ 10V
1072pF @ 30V
2.5W (Ta), 37.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
PJQ5850-AU_R2_000A1
Panjit International Inc.

MOSFET 2N-CH 40V 5A/14A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 14A (Tc)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
  • Power - Max: 2W (Ta), 14.4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
pacchetto: -
Request a Quote
-
40V
5A (Ta), 14A (Tc)
33mOhm @ 8A, 10V
2.5V @ 250µA
4.4nC @ 4.5V
425pF @ 25V
2W (Ta), 14.4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8
DMC2025UFDB-13
Diodes Incorporated

MOSFET N/P-CH 20V 6A/3.5A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: -
Request a Quote
-
20V
6A (Ta), 3.5A (Ta)
25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
1V @ 250µA, 1.4V @ 250µA
12.3nC @ 10V, 15nC @ 8V
486pF @ 10V, 642pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
PJX8804_R1_00001
Panjit International Inc.

MOSFET 2N-CH 30V 0.6A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
  • Power - Max: 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Request a Quote
-
30V
600mA (Ta)
220mOhm @ 600mA, 4,5V
1.3V @ 250µA
1.5nC @ 4.5V
93pF @ 15V
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563