Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 200V 5.5A TO-220AB
|
pacchetto: TO-220-3 |
Azione130.956 |
|
MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 5V | 2V @ 1mA | - | 840pF @ 25V | ±20V | - | 40W (Tc) | 600 mOhm @ 3.5A, 5V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 12V 3.2A SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione371.892 |
|
MOSFET (Metal Oxide) | 12V | 3.2A (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 15nC @ 4.5V | 1225pF @ 6V | ±8V | - | 750mW (Ta) | 51 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET P-CH 12V 13A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione5.936 |
|
MOSFET (Metal Oxide) | 12V | 13A (Ta) | 1.8V, 4.5V | 900mV @ 1mA | 140nC @ 5V | - | ±8V | - | 1.8W (Ta) | 6.5 mOhm @ 21A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 5.5A TO-220
|
pacchetto: TO-220-3 |
Azione3.952 |
|
MOSFET (Metal Oxide) | 500V | 5.5A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 700pF @ 25V | ±30V | - | 98W (Tc) | 1.2 Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 4.4A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.368 |
|
MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 5V @ 250µA | 6nC @ 10V | 250pF @ 25V | ±30V | - | 50W (Tc) | 1.1 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 20A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione848.400 |
|
MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 34nC @ 10V | 1060pF @ 25V | ±16V | - | 85W (Tc) | 32 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 60V 2.7A SOT223
|
pacchetto: TO-261-4, TO-261AA |
Azione48.000 |
|
MOSFET (Metal Oxide) | 60V | 2.7A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | ±20V | - | 2W (Ta), 3.1W (Tc) | 200 mOhm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
ON Semiconductor |
MOSFET N-CH 24V 12.5A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione636.240 |
|
MOSFET (Metal Oxide) | 24V | 12.5A (Ta), 110A (Tc) | 4.5V, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | ±20V | - | 1.5W (Ta), 110W (Tc) | 4.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
STMicroelectronics |
MOSFET N-CH 650V 15.5A TO-220
|
pacchetto: TO-220-3 |
Azione4.080 |
|
MOSFET (Metal Oxide) | 650V | 15.5A (Tc) | 10V | 4V @ 250µA | 55nC @ 10V | 1900pF @ 50V | ±25V | - | 150W (Tc) | 270 mOhm @ 7.75A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB
|
pacchetto: TO-220-3 |
Azione5.792 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | ±20V | - | 330W (Tc) | 4.7 mOhm @ 104A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 51A TO-262
|
pacchetto: TO-220-3 |
Azione6.832 |
|
- | - | - | 4.5V, 10V | - | - | - | ±16V | - | - | - | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 1KV 21A SOT-227B
|
pacchetto: SOT-227-4, miniBLOC |
Azione7.600 |
|
MOSFET (Metal Oxide) | 1000V | 21A | 10V | 4.5V @ 500µA | 250nC @ 10V | 8400pF @ 25V | ±20V | - | 520W (Tc) | 550 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Microsemi Corporation |
MOSFET N-CH 1000V 14A D3PAK
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione4.288 |
|
MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 5V @ 1mA | 120nC @ 10V | 3965pF @ 25V | ±30V | - | 500W (Tc) | 980 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS
|
pacchetto: SC-83 |
Azione7.856 |
|
MOSFET (Metal Oxide) | 600V | 18A (Ta) | 10V | 4.5V @ 1mA | 55nC @ 10V | 2050pF @ 25V | ±30V | - | 100W (Tc) | 270 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
||
Diodes Incorporated |
MOSFET N-CH 60V 8.9A 6UDFN
|
pacchetto: 6-UDFN Exposed Pad |
Azione3.296 |
|
MOSFET (Metal Oxide) | 60V | 8.9A (Ta) | 4.5V, 10V | 3V @ 250µA | 17nC @ 10V | 864pF @ 30V | ±20V | - | 820mW (Ta) | 16 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
||
Diodes Incorporated |
MOSFET N-CH 50V SOT323
|
pacchetto: SC-70, SOT-323 |
Azione2.352 |
|
MOSFET (Metal Oxide) | 50V | 300mA (Ta) | 1.8V, 5V | 1V @ 250µA | - | 50pF @ 25V | ±20V | - | 250mW (Ta) | 2 Ohm @ 50mA, 5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Infineon Technologies |
MOSFET P-CH 60V 18.7A TO-263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione402.000 |
|
MOSFET (Metal Oxide) | 60V | 18.7A (Ta) | 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | ±20V | - | 81.1W (Ta) | 130 mOhm @ 13.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 100V 30A TO252AA
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.344 |
|
MOSFET (Metal Oxide) | 100V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 40nC @ 10V | 2100pF @ 25V | ±20V | - | 71W (Tc) | 15 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 20V 1.8A SOT-23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione23.124 |
|
MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 8.5nC @ 4.5V | 675pF @ 10V | ±8V | - | 420mW (Ta) | 85 mOhm @ 1.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 600MA TO92-3
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione192.000 |
|
MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 3V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 1 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Vishay Siliconix |
MOSFET P-CH 30V 40A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione16.308 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 146nC @ 10V | 4230pF @ 15V | ±20V | - | 5W (Ta), 48W (Tc) | 5.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Harris Corporation |
7A, 500V, 1.1OHM, N-CHANNEL,
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Panjit International Inc. |
100V N-CHANNEL ENHANCEMENT MODE
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 3.3A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 20 nC @ 10 V | 1413 pF @ 25 V | ±20V | - | 2.5W (Ta) | 115mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
T2 40V LL, SINGLE NCH, SO-8FL 2.
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 26A (Ta), 161A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 90 nC @ 10 V | 4946 pF @ 25 V | ±20V | - | 3.8W (Ta), 143W (Tc) | 2.95mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) | 8-PowerTDFN, 5 Leads |
||
YAGEO XSEMI |
MOSFET N-CH 20V 3.5A SOT23
|
pacchetto: - |
Azione3.000 |
|
MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 7 nC @ 4.5 V | 370 pF @ 20 V | ±12V | - | 830mW (Ta) | 75mOhm @ 3.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Microchip Technology |
MOSFET N-CH 1200V 4A D3PAK
|
pacchetto: - |
Azione384 |
|
MOSFET (Metal Oxide) | 1200 V | 4A (Tc) | 10V | 5V @ 500µA | 43 nC @ 10 V | 1385 pF @ 25 V | ±30V | - | 175W (Tc) | 4.2Ohm @ 2A, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
||
Infineon Technologies |
MOSFET P-CH 30V 70A TO252-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 2V @ 270µA | 175 nC @ 10 V | 12400 pF @ 15 V | ±20V | - | 150W (Tc) | 4.2mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET N-CH 100V 128A TO220F
|
pacchetto: - |
Azione2.694 |
|
MOSFET (Metal Oxide) | 100 V | 128A (Tc) | 10V | 4V @ 310µA | 68 nC @ 10 V | 5065 pF @ 50 V | ±20V | - | 2.4W (Ta), 37.5W (Tc) | 4.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |