Pagina 1502 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti

Immagine	Numero di parte	Produttore	Descrizione	pacchetto	Azione	Quantità	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
	FDR858P	Fairchild/ON Semiconductor	MOSFET P-CH 30V 8A SSOT-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-8 Package / Case: 8-SMD, Gull Wing	pacchetto: 8-SMD, Gull Wing	Azione40.752		MOSFET (Metal Oxide)	30V	8A (Ta)	4.5V, 10V	3V @ 250µA	30nC @ 5V	2010pF @ 15V	±20V	-	1.8W (Ta)	19 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-8	8-SMD, Gull Wing