Transistor - FET, MOSFET - Singoli

BSS169L6906HTSA1

Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V
• Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

IRF1010EZL

Infineon Technologies

MOSFET N-CH 60V 75A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IRL3715ZCS

Infineon Technologies

MOSFET N-CH 20V 50A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AOD504

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 25V 18A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

PHP45NQ10TA,127

NXP

MOSFET N-CH 100V 47A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

BUK753R4-30B,127

NXP

MOSFET N-CH 30V 75A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4951pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 255W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

SI1300BDL-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 400MA SOT323-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 190mW (Ta), 200mW (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-3
• Package / Case: SC-70, SOT-323

pacchetto: SC-70, SOT-323

STW60NE10

STMicroelectronics

MOSFET N-CH 100V 60A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 30A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

pacchetto: TO-247-3

IPD65R660CFDATMA1

Infineon Technologies

MOSFET N-CH 650V 6A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

EPC8008ENGR

EPC

TRANS GAN 40V 2.7A BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.18nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 20V
• Vgs (Max): +6V, -5V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 325 mOhm @ 500mA, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

pacchetto: Die

IXTA1R6N100D2

IXYS

MOSFET N-CH 1000V 1.6A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DMP3007SCG-7

Diodes Incorporated

MOSFET BVDSS: 25V 30V V-DFN3333-

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta)
• Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 11.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: V-DFN3333-8
• Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

SI8809EDB-T2-E1

Vishay Siliconix

MOSFET P-CH 20V 1.9A MICROFOOT

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-Microfoot
• Package / Case: 4-XFBGA

pacchetto: 4-XFBGA

STD70NS04ZL

STMicroelectronics

MOSFET N-CH 33V 70A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 33V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

CSD19534Q5AT

Texas Instruments

MOSFET N-CH 100V 50 8SON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
• Rds On (Max) @ Id, Vgs: 15.1 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSON (5x6)
• Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

STP10NM60N

STMicroelectronics

MOSFET N-CH 600V 10A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 70W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

FDPF12N50NZ

Fairchild/ON Semiconductor

MOSFET N-CH 500V TO-220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 520 mOhm @ 5.75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

FDB3672_F085

Fairchild/ON Semiconductor

MOSFET N-CH 100V 44A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BUK7M33-60EX

Nexperia USA Inc.

MOSFET N-CH 60V MLFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 24A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 628pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 44W (Tc)
• Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

pacchetto: SOT-1210, 8-LFPAK33 (5-Lead)

BSC014N03MS G

Infineon Technologies

MOSFET N-CH 30V 100A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

IRFP260PBF

Vishay Siliconix

MOSFET N-CH 200V 46A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 280W (Tc)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 28A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXFH150N30X3

IXYS

MOSFET N-CH 300V 150A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300 V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 890W (Tc)
• Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

pacchetto: -

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2SK2158-T2B-AT

Renesas Electronics Corporation

SMALL SIGNAL N-CHANNEL MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

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EPC2204A

EPC

TRANS GAN 80V .006OHM AECQ101

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

pacchetto: -

PXP020-20QXJ

Nexperia USA Inc.

PXP020-20QX/SOT8002/MLPAK33

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 23.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 15W (Tc)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 7.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MLPAK33
• Package / Case: 8-PowerVDFN

pacchetto: -

FDS3572_NL

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: -

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DMN2710UWQ-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 470mW (Ta)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

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GAN190-650FBEZ

Nexperia USA Inc.

650 V, 190 MOHM GALLIUM NITRIDE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V
• Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
• Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
• Vgs (Max): +7V, -1.4V
• FET Feature: -
• Power Dissipation (Max): 125W (Ta)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: DFN5060-5
• Package / Case: 8-PowerVDFN

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