Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH TO262-7
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione7.632 |
|
MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.5V, 10V | 2V @ 250µA | 230nC @ 5V | 6000pF @ 15V | ±20V | - | 300W (Tc) | 2.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 40V 130A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.552 |
|
MOSFET (Metal Oxide) | 40V | 130A (Tc) | 4.5V, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | ±16V | - | 3.8W (Ta), 200W (Tc) | 6.5 mOhm @ 78A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH TO252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.256 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta), 46A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 33nC @ 10V | 1333pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 5 mOhm @ 20A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH TO-254AA
|
pacchetto: TO-254-3, TO-254AA (Straight Leads) |
Azione2.800 |
|
MOSFET (Metal Oxide) | 100V | 34A (Tc) | 10V | 4V @ 250µA | 125nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 81 mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
||
Vishay Siliconix |
MOSFET N-CH 20V 500MA SC89-3
|
pacchetto: SC-89, SOT-490 |
Azione930.588 |
|
MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 0.75nC @ 4.5V | - | ±6V | - | 250mW (Ta) | 700 mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 5A TO-220F
|
pacchetto: TO-220-3 Full Pack |
Azione3.840 |
|
MOSFET (Metal Oxide) | 150V | 5A (Tc) | 10V | 4V @ 250µA | 8.5nC @ 10V | 270pF @ 25V | ±25V | - | 38W (Tc) | 600 mOhm @ 2.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 500V 13A TO262-3
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione10.776 |
|
MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 3.5V @ 520µA | 36nC @ 10V | 1420pF @ 100V | ±20V | - | 114W (Tc) | 250 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223
|
pacchetto: TO-261-4, TO-261AA |
Azione12.240 |
|
MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | ±20V | - | 1.8W (Ta) | 45 Ohm @ 120mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Rohm Semiconductor |
MOSFET N-CH 30V 32A 8-HSOP
|
pacchetto: 8-PowerTDFN |
Azione6.272 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 42.8nC @ 10V | 2850pF @ 15V | ±20V | - | 3W (Ta), 34.6W (Tc) | 1.9 mOhm @ 32A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH TDSON-8
|
pacchetto: - |
Azione47.214 |
|
MOSFET (Metal Oxide) | 34V | 100A | 10V | 2.2V @ 250µA | 46nC @ 10V | 3700pF @ 15V | ±20V | - | 69W (Tc) | 4.2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
||
EPC |
TRANS GAN 150V 12A BUMPED DIE
|
pacchetto: Die |
Azione52.842 |
|
GaNFET (Gallium Nitride) | 150V | 12A (Ta) | 5V | 2.5V @ 3mA | 7.5nC @ 5V | 540pF @ 100V | +6V, -5V | - | - | 25 mOhm @ 6A, 5V | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
||
Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione93.330 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.3V @ 26µA | 1.5nC @ 10V | 56pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 500MA TO-92
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione563.184 |
|
MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 40pF @ 10V | ±20V | - | 830mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V DPAK-3
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione90.492 |
|
MOSFET (Metal Oxide) | 200V | 16A (Tc) | 5V, 10V | 2.5V @ 250µA | 40nC @ 10V | 1575pF @ 25V | ±20V | - | 89W (Tc) | 125 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione127.824 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 95nC @ 10V | 3545pF @ 15V | ±20V | - | 5.2W (Ta), 69W (Tc) | 3.1 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Texas Instruments |
MOSFET N-CH 25V 97A 8SON
|
pacchetto: 8-PowerTDFN |
Azione24.684 |
|
MOSFET (Metal Oxide) | 25V | 21A (Ta), 97A (Tc) | 3V, 8V | 1.4V @ 250µA | 9.7nC @ 4.5V | 1365pF @ 12.5V | +10V, -8V | - | 3.1W (Ta) | 5 mOhm @ 20A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SON | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 40V 100A TO252AA
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.5V @ 250µA | 130 nC @ 10 V | 8000 pF @ 25 V | ±20V | - | 107W (Tc) | 2.33mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 250V 150A TO268HV
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 150A (Tc) | 10V | 4.5V @ 4mA | 154 nC @ 10 V | 10400 pF @ 25 V | ±20V | - | 780W (Tc) | 9mOhm @ 75A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV (IXFT) | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
||
Infineon Technologies |
IC MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
SIC_DISCRETE
|
pacchetto: - |
Azione1.389 |
|
SiCFET (Silicon Carbide) | 1200 V | 48A | - | - | - | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Alpha & Omega Semiconductor Inc. |
N
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A | 4.5V, 10V | 2.5V @ 250µA | 165 nC @ 4.5 V | 9000 pF @ 20 V | ±20V | - | 147W | 1mOhm @ 20A, 10V | -55°C ~ 150°C | Surface Mount | 8-DFN-EP (5x6) | 8-PowerVDFN |
||
Renesas Electronics Corporation |
MOSFET N-CH 600V 16A TO220FP
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 16A (Tc) | - | - | 18 nC @ 10 V | 988 pF @ 25 V | - | - | 29.9W (Tc) | 290mOhm @ 8A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Vishay Siliconix |
POWERPAK SO-8, 8.8 M @ 10V, 12.5
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 15.2A (Ta), 52.1A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 29 nC @ 10 V | 1185 pF @ 30 V | ±20V | - | 3.6W (Ta), 43W (Tc) | 8.8mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Wolfspeed, Inc. |
75M 1200V 175C SIC FET
|
pacchetto: - |
Azione1.233 |
|
SiCFET (Silicon Carbide) | 1200 V | 32A (Tc) | 15V | 3.6V @ 5mA | 54 nC @ 15 V | 1390 pF @ 1000 V | +15V, -4V | - | 136W (Tc) | 90mOhm @ 20A, 15V | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
onsemi |
NFET DPAK SPCL 60V TR
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET N-CH 20V 6.5A SOT23 T&R 3
|
pacchetto: - |
Azione6.630 |
|
MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 1.8V, 10V | 1.2V @ 250µA | 4.6 nC @ 4.5 V | 414 pF @ 10 V | ±12V | - | 800mW (Ta) | 29mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
|
pacchetto: - |
Azione8.043 |
|
MOSFET (Metal Oxide) | 40 V | 5A (Ta), 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 8.3 nC @ 4.5 V | 929 pF @ 15 V | ±20V | - | 2W (Ta), 22W (Tc) | 45mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
IXYS |
DISCRETE MOSFET 98A 600V X3 TO26
|
pacchetto: - |
Azione975 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |