Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 80V 80A TO262-3
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione2.128 |
|
MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 3.5V @ 73µA | 56nC @ 10V | 3840pF @ 40V | ±20V | - | 136W (Tc) | 7 mOhm @ 73A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 20V 85A TO-220AB
|
pacchetto: TO-220-3 |
Azione3.504 |
|
MOSFET (Metal Oxide) | 20V | 85A (Tc) | 4.5V, 7V | 700mV @ 250µA | 78nC @ 4.5V | 3300pF @ 15V | ±10V | - | 110W (Tc) | 8 mOhm @ 51A, 7V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DFN
|
pacchetto: 8-VDFN Exposed Pad |
Azione4.016 |
|
MOSFET (Metal Oxide) | 30V | 15.8A (Ta), 40A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 20nC @ 10V | 1300pF @ 15V | ±20V | - | 3.1W (Ta), 62W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-VDFN Exposed Pad |
||
Global Power Technologies Group |
MOSFET N-CH 200V 9A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.424 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 5V @ 250µA | 8.6nC @ 10V | 414pF @ 25V | ±30V | - | 52W (Tc) | 400 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 21A 8DFN
|
pacchetto: 8-PowerSMD, Flat Leads |
Azione4.128 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta), 24A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 33nC @ 10V | 2200pF @ 15V | ±20V | - | 4.2W (Ta), 35W (Tc) | 5.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 28A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione5.040 |
|
MOSFET (Metal Oxide) | 200V | 28A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2220pF @ 25V | ±30V | - | 3.13W (Ta), 156W (Tc) | 82 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 10A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione62.388 |
|
MOSFET (Metal Oxide) | 150V | 10A (Tc) | 10V | 4V @ 250µA | 23nC @ 10V | 715pF @ 25V | ±25V | - | 2.5W (Ta), 50W (Tc) | 210 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
DIFFERENTIATED MOSFETS
|
pacchetto: - |
Azione5.104 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3
|
pacchetto: TO-251-3 Stub Leads, IPak |
Azione3.328 |
|
MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 3.5V @ 140µA | 17nC @ 10V | 460pF @ 500V | ±20V | - | 51W (Tc) | 750 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione4.400 |
|
MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 4V @ 250µA | 19.6nC @ 10V | 691pF @ 100V | ±30V | - | 25W (Tc) | 950 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
Infineon Technologies |
MOSFET N-CH 80V 180A TO263-7
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione2.592 |
|
MOSFET (Metal Oxide) | 80V | 180A (Tc) | 6V, 10V | 3.5V @ 270µA | 206nC @ 10V | 14200pF @ 40V | ±20V | - | 300W (Tc) | 1.9 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 55V 100A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione6.396 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 2.2V @ 150µA | 362nC @ 10V | 17270pF @ 25V | ±16V | - | 214W (Tc) | 3.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 6.8A TO-220SIS
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione8.076 |
|
MOSFET (Metal Oxide) | 650V | 6.8A (Ta) | 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | ±30V | - | 30W (Tc) | 780 mOhm @ 3.4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Infineon Technologies |
MOSFET N-CH 150V 100A TO262-3
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione6.432 |
|
MOSFET (Metal Oxide) | 150V | 100A (Tc) | 8V, 10V | 4V @ 270µA | 93nC @ 10V | 5470pF @ 75V | ±20V | - | 300W (Tc) | 7.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 30V 9A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione359.244 |
|
MOSFET (Metal Oxide) | 30V | 9A (Tc) | 4.5V, 10V | 1V @ 250µA | 17nC @ 5V | 800pF @ 25V | ±16V | - | 2.5W (Tc) | 19 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 12V 40A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione37.980 |
|
MOSFET (Metal Oxide) | 12V | 40A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 110nC @ 8V | 3720pF @ 6V | ±8V | - | 4.2W (Ta), 36W (Tc) | 3.8 mOhm @ 15A, 4.5V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Diodes Incorporated |
MOSFET N-CH 60V 1.1A TO92-3
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione99.228 |
|
MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 5V, 10V | 3V @ 1mA | - | 350pF @ 25V | ±20V | - | 850mW (Ta) | 330 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 17A TO252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione578.088 |
|
MOSFET (Metal Oxide) | 30V | 17A (Ta), 46A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 22.5nC @ 10V | 951pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 6.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET N-CH 25V 9.5A IPAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 65A (Tc) | - | 2V @ 250µA | 16 nC @ 5 V | 1400 pF @ 20 V | - | - | - | 8.4mOhm @ 30A, 10V | - | Through Hole | IPAK | TO-251-3 Stub Leads, IPAK |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V X2-DSN1515
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 3.8A (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 4.7 nC @ 4.5 V | 566 pF @ 10 V | -6V | - | 900mW (Ta) | 40mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DSN1515-9 (Type B) | 9-XFBGA, DSBGA |
||
Infineon Technologies |
MOSFET N-CH 800V 8A SOT223
|
pacchetto: - |
Azione8.742 |
|
MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 3.5V @ 170µA | 20 nC @ 10 V | 570 pF @ 500 V | ±20V | - | 7.4W (Tc) | 600mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
||
STMicroelectronics |
TO247-4
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 55A (Tc) | 15V, 18V | 4.2V @ 5mA | 77 nC @ 18 V | 2077 pF @ 400 V | +22V, -10V | - | 398W (Tc) | 27mOhm @ 30A, 18V | -55°C ~ 200°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Diodes Incorporated |
MOSFET N-CH 100V 4A 6UDFN
|
pacchetto: - |
Azione80.373 |
|
MOSFET (Metal Oxide) | 100 V | 4A (Ta) | 4.5V, 10V | 3V @ 250µA | 4.5 nC @ 10 V | 228 pF @ 50 V | ±20V | - | 1.8W (Ta) | 62mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
Goford Semiconductor |
N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
|
pacchetto: - |
Azione14.253 |
|
MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 31 nC @ 10 V | 1988 pF @ 30 V | ±20V | - | 69W (Tc) | 9mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (4.9x5.75) | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 30V 19A/156A TO220-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 19A (Ta), 156A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 132 nC @ 10 V | 5200 pF @ 15 V | ±20V | - | 160W (Tc) | 4.1mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Micro Commercial Co |
MOSFET N-CH 60V 340MA SOT523
|
pacchetto: - |
Azione10.005 |
|
MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 4.5V, 10V | 2.5V @ 1mA | - | 40 pF @ 10 V | ±20V | - | 350mW | 5Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
Infineon Technologies |
MOSFET N-CH 30V 22A . 40A TSDSON
|
pacchetto: - |
Azione268.149 |
|
MOSFET (Metal Oxide) | 30 V | 22A (Ta). 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 44 nC @ 10 V | 2800 pF @ 15 V | ±20V | - | 2.1W (Ta), 69W (Tc) | 1.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Goford Semiconductor |
MOSFET P-CH 15V 70A TO-252
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 70A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | - | - | ±12V | - | 70W (Tc) | 8.5mOhm @ 20A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |