Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 18A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.568 |
|
MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 2V @ 16µA | 13nC @ 10V | 470pF @ 30V | ±20V | - | 47W (Tc) | 64 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 30V 6UDFN
|
pacchetto: 6-PowerUFDFN |
Azione5.792 |
|
MOSFET (Metal Oxide) | 30V | 9.4A (Ta) | 1.8V, 10V | 1.1V @ 250µA | 7.5nC @ 4.5V | 690pF @ 15V | ±12V | - | 2.37W (Ta) | 11.4 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET DFN 5X6
|
pacchetto: 8-VDFN Exposed Pad |
Azione3.008 |
|
- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | 8-DFN (5x6) | 8-VDFN Exposed Pad |
||
Nexperia USA Inc. |
MOSFET N-CH 60V DPAK
|
pacchetto: - |
Azione2.720 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A PS-8
|
pacchetto: 8-SMD, Flat Lead |
Azione4.048 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | ±20V | - | 840mW (Ta) | 12.9 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 19A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione756.576 |
|
MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 4V @ 250µA | 24nC @ 20V | 350pF @ 25V | ±20V | - | 55W (Tc) | 70 mOhm @ 19A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3
|
pacchetto: E-Line-3 |
Azione6.976 |
|
MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 5V, 10V | 1.5V @ 1mA | - | 75pF @ 25V | ±20V | - | 700mW (Ta) | 3 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
STMicroelectronics |
MOSFET N-CH 500V 11A TO-220
|
pacchetto: TO-220-3 |
Azione3.872 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 4.5V @ 100µA | 47nC @ 10V | 1600pF @ 25V | ±30V | - | 140W (Tc) | 480 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 75V 70A TO-263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione103.464 |
|
MOSFET (Metal Oxide) | 75V | 70A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 2725pF @ 25V | ±20V | - | 150W (Tc) | 12 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 100V SO8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione7.376 |
|
MOSFET (Metal Oxide) | 100V | 8A (Ta), 33A (Ta) | 4.5V, 10V | 3V @ 250µA | 13.5nC @ 10V | 905pF @ 25V | ±16V | - | 3.6W (Ta), 62W (Tc) | 24 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
ON Semiconductor |
MOSFET N-CH 30V 5A MCPH6
|
pacchetto: 6-SMD, Flat Leads |
Azione2.336 |
|
MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | 2.6V @ 1mA | 5.6nC @ 10V | 280pF @ 10V | ±20V | - | 1.5W (Ta) | 55 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
||
Vishay Siliconix |
MOSFET N-CH 400V 350MA 4-DIP
|
pacchetto: 4-DIP (0.300", 7.62mm) |
Azione11.508 |
|
MOSFET (Metal Oxide) | 400V | 350mA (Ta) | 10V | 4V @ 250µA | 17nC @ 10V | 170pF @ 25V | ±20V | - | 1W (Ta) | 3.6 Ohm @ 210mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione448.368 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 77nC @ 10V | 3340pF @ 15V | ±20V | - | 5W (Ta), 48W (Tc) | 3.2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 30A LFPAK
|
pacchetto: SOT-1210, 8-LFPAK33 (5-Lead) |
Azione2.720 |
|
MOSFET (Metal Oxide) | 40V | 30A (Tc) | 5V | 2.1V @ 1mA | 7.7nC @ 5V | 798pF @ 25V | ±10V | - | 44W (Tc) | 20 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
||
Texas Instruments |
MOSFET N-CH 25V 100A 8-SON
|
pacchetto: 8-PowerTDFN |
Azione140.988 |
|
MOSFET (Metal Oxide) | 25V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 1.9V @ 250µA | 18nC @ 4.5V | 2660pF @ 12.5V | +16V, -12V | - | 3.1W (Ta) | 2.4 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6-MLP 2X2
|
pacchetto: 6-VDFN Exposed Pad |
Azione527.964 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 3V @ 250µA | 13nC @ 10V | 760pF @ 15V | ±20V | - | 2.4W (Ta) | 21 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
||
Rohm Semiconductor |
MOSFET N-CH 600V 30A TO220
|
pacchetto: TO-220-2 Full Pack |
Azione9.156 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 4V @ 1mA | 85nC @ 10V | 2100pF @ 25V | ±30V | - | 40W (Tc) | 130 mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
Diodes Incorporated |
MOSFET P-CH 20V U-WLB1515-9
|
pacchetto: 9-UFBGA, WLBGA |
Azione24.576 |
|
MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 7nC @ 4.5V | 500pF @ 10V | -6V | - | 1W (Ta) | 33 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1515-9 | 9-UFBGA, WLBGA |
||
Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione15.012 |
|
MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 2V @ 1mA | - | 125pF @ 25V | ±20V | - | 1W (Tc) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 61A LL LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione49.518 |
|
MOSFET (Metal Oxide) | 30V | 61A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 16nC @ 10V | 1057pF @ 15V | ±20V | - | 48W (Tc) | 7.1 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Vishay Siliconix |
MOSFET P-CH 60V 185MA SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione1.142.724 |
|
MOSFET (Metal Oxide) | 60V | 185mA (Ta) | 4.5V, 10V | 3V @ 250µA | 1.7nC @ 15V | 23pF @ 25V | ±20V | - | 350mW (Ta) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 500V 12A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione122.616 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 100µA | 27nC @ 10V | 816pF @ 50V | ±25V | - | 90W (Tc) | 320 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
onsemi |
T6 60V N-CH LL IN LFPAK33
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 16A (Ta), 71A (Tc) | 4.5V, 10V | 2V @ 53µA | 19 nC @ 10 V | 1330 pF @ 25 V | ±20V | - | 3.2W (Ta), 63W (Tc) | 6.8mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V X2-DFN0604-
|
pacchetto: - |
Azione30.000 |
|
MOSFET (Metal Oxide) | 20 V | 530mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.3 nC @ 4.5 V | 17 pF @ 16 V | ±8V | - | 340mW (Ta) | 1.9Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0604-3 | 3-XFDFN |
||
Vishay Siliconix |
MOSFET N-CH 100V 12A/42.5A PPAK
|
pacchetto: - |
Azione38.733 |
|
MOSFET (Metal Oxide) | 100 V | 12A (Ta), 42.5A (Tc) | 7.5V, 10V | 3.4V @ 250µA | 38 nC @ 10 V | 1850 pF @ 50 V | ±20V | - | 5W (Ta), 62.5W (Tc) | 14.4mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
onsemi |
MOSFET N-CH 40V 65A/420A 8DFNW
|
pacchetto: - |
Azione11.694 |
|
MOSFET (Metal Oxide) | 40 V | 65A (Ta), 420A (Tc) | 10V | 4V @ 250µA | 140 nC @ 10 V | 9230 pF @ 25 V | ±20V | - | 4.9W (Ta), 205W (Tc) | 0.67mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
MOSFET N-CH 600V 2A MP3A
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 4.5V @ 1mA | 6.2 nC @ 10 V | 165 pF @ 25 V | ±30V | - | 30W (Tc) | 6.8Ohm @ 1A, 10V | 150°C | Surface Mount | MP-3A | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
MOSLEADER |
P -20V -4.9A SOT-23
|
pacchetto: - |
Request a Quote |
|
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