Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
pacchetto: TO-220-3 Full Pack |
Azione3.792 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 240V 200MA TO-92
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Azione3.456 |
|
MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 2.5V, 10V | 2V @ 1mA | - | 125pF @ 25V | ±20V | - | 350mW (Tc) | 10 Ohm @ 500mA, 10V | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 3.5A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.912 |
|
MOSFET (Metal Oxide) | 500V | 3.5A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 650pF @ 25V | ±30V | - | 40W (Tc) | 1.55 Ohm @ 1.75A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 100V 7.7A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione46.596 |
|
MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | ±10V | - | 2.5W (Ta), 42W (Tc) | 270 mOhm @ 4.6A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 55V 17A TO-220-5
|
pacchetto: TO-220-5 |
Azione7.376 |
|
MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 720pF @ 25V | ±20V | Current Sensing | 60W (Tc) | 100 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
STMicroelectronics |
MOSFET N-CH 600V 19A TO-247
|
pacchetto: TO-247-3 |
Azione57.792 |
|
MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 2050pF @ 50V | ±25V | - | 150W (Tc) | 180 mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 100A TO262-3
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione7.088 |
|
MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 4700pF @ 25V | ±20V | - | 300W (Tc) | 7.1 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 650V 10.6A TO220
|
pacchetto: TO-220-3 |
Azione2.144 |
|
MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | ±20V | - | 83W (Tc) | 380 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
IXYS |
MOSFET N-CH 500V 21A TO-247
|
pacchetto: TO-247-3 |
Azione6.736 |
|
MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 4.5V @ 4mA | 84nC @ 10V | 3000pF @ 25V | ±30V | - | 280W (Tc) | 250 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 1200V 2.4A TO-247
|
pacchetto: TO-247-3 |
Azione4.560 |
|
MOSFET (Metal Oxide) | 1200V | 2.4A (Tc) | 10V | 4.5V @ 250µA | 37nC @ 10V | 1207pF @ 25V | ±20V | - | 125W (Tc) | 7.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 4.3A 6DFN
|
pacchetto: 6-UDFN Exposed Pad |
Azione7.824 |
|
MOSFET (Metal Oxide) | 30V | 4.3A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 7.6nC @ 4.5V | 505pF @ 15V | ±12V | - | 1.5W (Ta), 8.3W (Tc) | 47 mOhm @ 4.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacchetto: 8-PowerTDFN |
Azione4.464 |
|
MOSFET (Metal Oxide) | 30V | 39A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9.2nC @ 10V | 562pF @ 15V | ±20V | - | 33W (Tc) | 11.7 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 4.5A TO-220F
|
pacchetto: TO-220-3 Full Pack |
Azione39.912 |
|
MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 5V @ 250µA | 8nC @ 10V | 700pF @ 25V | ±30V | - | 28W (Tc) | 1.55 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 13.5A POWER56
|
pacchetto: 8-PowerTDFN |
Azione153.504 |
|
MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 28A (Tc) | 4.5V, 10V | 3V @ 250µA | 22nC @ 10V | 1350pF @ 15V | ±20V | - | 2.5W (Ta), 27W (Tc) | 8 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
EPC |
TRANS GAN 15V BUMPED DIE
|
pacchetto: Die |
Azione19.596 |
|
GaNFET (Gallium Nitride) | 15V | 3.4A (Ta) | 5V | 2.5V @ 1mA | 0.93nC @ 5V | 100pF @ 6V | +6V, -4V | - | - | 28 mOhm @ 1.5A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 0.87A SOT323
|
pacchetto: SC-70, SOT-323 |
Azione138.720 |
|
MOSFET (Metal Oxide) | 30V | 870mA (Tc) | 4.5V | 1.5V @ 250µA | 0.65nC @ 4.5V | 37pF @ 25V | ±12V | - | 560mW (Tc) | 440 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
||
Infineon Technologies |
MOSFET N-CH 60V 100A 5X6 PQFN
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 21A (Ta), 100A (Tc) | - | 4V @ 150µA | 100 nC @ 10 V | 4175 pF @ 30 V | - | - | - | 4.1mOhm @ 50A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 24A (Ta), 100A (Tc) | 5V, 10V | 2.5V @ 250µA | 40.1 nC @ 10 V | 2798 pF @ 20 V | ±20V | - | 2.62W (Ta), 65.2W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
||
Vishay Siliconix |
N-CHANNEL 100-V (D-S) 175C MOSFE
|
pacchetto: - |
Azione8.925 |
|
MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 27 nC @ 10 V | 978 pF @ 50 V | ±20V | - | 83W (Tc) | 21mOhm @ 7.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
|
pacchetto: - |
Azione900 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 21A (Tc) | 20V | 4V @ 3.3mA | 29.6 nC @ 20 V | 652 pF @ 1000 V | +20V, -5V | - | 156W (Tc) | 150mOhm @ 13.3A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Comchip Technology |
MOSFET N-CH 60V 14A/80A DPAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 14A (Ta), 80A (Tc) | 10V | 4V @ 250µA | 118 nC @ 10 V | 4871 pF @ 30 V | ±20V | - | 2.5W (Ta), 83W (Tc) | 7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
1200V, 36M, 3-PIN THD, TRENCH-ST
|
pacchetto: - |
Azione14.142 |
|
SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | 2335 pF @ 800 V | +21V, -4V | - | 176W | 47mOhm @ 21A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
||
onsemi |
MOSFET N-CH 1200V 40A SMD
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET N-CH 40V 22A PWRDI5060
|
pacchetto: - |
Azione35.040 |
|
MOSFET (Metal Oxide) | 40 V | 22A (Ta), 100A (Tc) | 5V, 10V | 2.5V @ 250µA | 49 nC @ 10 V | 3367 pF @ 20 V | ±20V | - | 2.7W (Ta) | 3.3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 350 V | 11A (Tc) | 10V | 4V @ 250µA | 63 nC @ 10 V | 1250 pF @ 25 V | ±20V | - | 150W (Tc) | 550mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
onsemi |
MOSFET P-CH 40V 30A 8DFN
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 30A (Tc) | 4.5V, 10V | 3V @ 250µA | 18 nC @ 10 V | 1200 pF @ 20 V | ±20V | - | 68.2W (Tc) | 20.5mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFN (5.1x6.3) | 8-PowerTDFN |
||
Diotec Semiconductor |
IC
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 48A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 35 nC @ 10 V | 1812 pF @ 30 V | ±20V | - | 56.8W (Tc) | 6.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (5x6) | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 19A TO247
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |