Pagina 1032 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.032/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRLC8256ED
Infineon Technologies

MOSFET N-CH WAFER

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione2.048
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot IRFU5505
Infineon Technologies

MOSFET P-CH 55V 18A I-PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione52.680
MOSFET (Metal Oxide)
55V
18A (Tc)
10V
4V @ 250µA
32nC @ 10V
650pF @ 25V
±20V
-
57W (Tc)
110 mOhm @ 9.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
hot HUF76645P3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione115.080
MOSFET (Metal Oxide)
100V
75A (Tc)
4.5V, 10V
3V @ 250µA
153nC @ 10V
4400pF @ 25V
±16V
-
310W (Tc)
14 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRFPS30N60KPBF
Vishay Siliconix

MOSFET N-CH 600V 30A SUPER247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: SUPER-247 (TO-274AA)
  • Package / Case: TO-274AA
pacchetto: TO-274AA
Azione6.744
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
5V @ 250µA
220nC @ 10V
5870pF @ 25V
±30V
-
450W (Tc)
190 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
SUPER-247 (TO-274AA)
TO-274AA
NTF3055-100T3LF
ON Semiconductor

MOSFET N-CH 60V 3A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione6.384
MOSFET (Metal Oxide)
60V
3A (Ta)
10V
4V @ 250µA
22nC @ 10V
455pF @ 25V
±20V
-
1.3W (Ta)
110 mOhm @ 1.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot IRL540
Vishay Siliconix

MOSFET N-CH 100V 28A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione4.016
MOSFET (Metal Oxide)
100V
28A (Tc)
4V, 5V
2V @ 250µA
64nC @ 5V
2200pF @ 25V
±10V
-
150W (Tc)
77 mOhm @ 17A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXFN110N85X
IXYS

850V/110A ULT JUNCT X-CLASS HIPE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1170W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione4.208
MOSFET (Metal Oxide)
850V
110A (Tc)
10V
5.5V @ 8mA
425nC @ 10V
17000pF @ 25V
±30V
-
1170W (Tc)
33 mOhm @ 55A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TSM70N600ACL X0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 743pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262S (I2PAK)
  • Package / Case: TO-262-3 Short Leads, I2Pak
pacchetto: TO-262-3 Short Leads, I2Pak
Azione5.184
MOSFET (Metal Oxide)
700V
8A (Tc)
10V
4V @ 250µA
12.6nC @ 10V
743pF @ 100V
±30V
-
83W (Tc)
600 mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262S (I2PAK)
TO-262-3 Short Leads, I2Pak
IXTA05N100HV
IXYS

MOSFET N-CH 1KV 750MA TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.744
MOSFET (Metal Oxide)
1000V
750mA (Tc)
10V
4.5V @ 250µA
7.8nC @ 10V
260pF @ 25V
±30V
-
40W (Tc)
17 Ohm @ 375mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMTH8012LK3Q-13
Diodes Incorporated

MOSFET NCH 80V 50A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2051pF @ 40V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-4L
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
pacchetto: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Azione8.976
MOSFET (Metal Oxide)
80V
50A (Tc)
-
3V @ 250µA
46.8nC @ 10V
2051pF @ 40V
-
-
2.6W (Ta)
16 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-4L
TO-252-5, DPak (4 Leads + Tab), TO-252AD
AOD5T40P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 400V 3.9A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 273pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.45 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.496
MOSFET (Metal Oxide)
400V
3.9A (Tc)
10V
5V @ 250µA
9nC @ 10V
273pF @ 100V
±30V
-
52W (Tc)
1.45 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDMS3662
Fairchild/ON Semiconductor

MOSFET N-CH 100V 8.9A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.8 mOhm @ 8.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione14.340
MOSFET (Metal Oxide)
100V
8.9A (Ta), 49A (Tc)
10V
4.5V @ 250µA
75nC @ 10V
4620pF @ 50V
±20V
-
2.5W (Ta), 104W (Tc)
14.8 mOhm @ 8.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot STP11NM80
STMicroelectronics

MOSFET N-CH 800V 11A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione121.164
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
5V @ 250µA
43.6nC @ 10V
1630pF @ 25V
±30V
-
150W (Tc)
400 mOhm @ 5.5A, 10V
-65°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IPW65R190CFD
Infineon Technologies

MOSFET N-CH 650V 17.5A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione103.464
MOSFET (Metal Oxide)
650V
17.5A (Tc)
10V
4.5V @ 730µA
68nC @ 10V
1850pF @ 100V
±20V
-
151W (Tc)
190 mOhm @ 7.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
hot IRL630PBF
Vishay Siliconix

MOSFET N-CH 200V 9A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione228.060
MOSFET (Metal Oxide)
200V
9A (Tc)
4V, 5V
2V @ 250µA
40nC @ 10V
1100pF @ 25V
±10V
-
74W (Tc)
400 mOhm @ 5.4A, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPB200N15N3 G
Infineon Technologies

MOSFET N-CH 150V 50A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione23.880
MOSFET (Metal Oxide)
150V
50A (Tc)
8V, 10V
4V @ 90µA
31nC @ 10V
1820pF @ 75V
±20V
-
150W (Tc)
20 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSO051N03MSGXUMA1
Infineon Technologies

SMALL SIGNAL FIELD-EFFECT TRANSI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
14A
-
2V @ 250µA
-
3200 pF @ 15 V
±20V
-
2.5W
5.1mOhm @ 18A, 10V
-55°C ~ 150°C
Surface Mount
PG-DSO-8
8-SOIC (0.154", 3.90mm Width)
MMIX1T660N04T4
IXYS

MOSFET N-CH 40V 660A 24SMPD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 24-SMPD
  • Package / Case: 24-PowerSMD, 21 Leads
pacchetto: -
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MOSFET (Metal Oxide)
40 V
660A (Tc)
10V
4V @ 250µA
860 nC @ 10 V
44000 pF @ 25 V
±15V
-
830W (Tc)
0.85mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
24-SMPD
24-PowerSMD, 21 Leads
SPU08N05L
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
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IXTP230N04T4
IXYS

MOSFET N-CH 40V 230A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 340W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: -
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MOSFET (Metal Oxide)
40 V
230A (Tc)
10V
4V @ 250µA
140 nC @ 10 V
7400 pF @ 25 V
±15V
-
340W (Tc)
2.9mOhm @ 115A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
SISS65DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 25.9A/94A PPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 25.9A (Ta), 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
pacchetto: -
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MOSFET (Metal Oxide)
30 V
25.9A (Ta), 94A (Tc)
4.5V, 10V
2.3V @ 250µA
138 nC @ 10 V
4930 pF @ 15 V
±20V
-
5.1W (Ta), 65.8W (Tc)
4.6mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
UF3SC120016K3S
Qorvo

SICFET N-CH 1200V 107A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Cascode SiCJFET)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 517W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Azione5.058
SiCFET (Cascode SiCJFET)
1200 V
107A (Tc)
12V
6V @ 10mA
218 nC @ 15 V
7824 pF @ 800 V
±20V
-
517W (Tc)
21mOhm @ 50A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
AOB2140L
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9985 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 8.3W (Ta), 272W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
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MOSFET (Metal Oxide)
40 V
57A (Ta), 195A (Tc)
4.5V, 10V
2.3V @ 250µA
180 nC @ 10 V
9985 pF @ 20 V
±20V
-
8.3W (Ta), 272W (Tc)
1.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GT080N10KI
Goford Semiconductor

N100V,65A,RD<8M@10V,VTH1.0V~2.5V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2394 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
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MOSFET (Metal Oxide)
100 V
65A (Tc)
4.5V, 10V
2.5V @ 250µA
35 nC @ 10 V
2394 pF @ 50 V
±20V
-
79W (Tc)
8mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
NTP082N65S3F
onsemi

MOSFET N-CH 650V 40A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 313W (Tc)
  • Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: -
Azione2.385
MOSFET (Metal Oxide)
650 V
40A (Tc)
10V
5V @ 4mA
81 nC @ 10 V
3410 pF @ 400 V
±30V
-
313W (Tc)
82mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
SQJ868EP-T1_BE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8 Dual
  • Package / Case: PowerPAK® SO-8 Dual
pacchetto: -
Azione17.964
MOSFET (Metal Oxide)
40 V
58A (Tc)
10V
3.5V @ 250µA
55 nC @ 10 V
2450 pF @ 20 V
±20V
-
48W (Tc)
7.35mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
PJS6415A_S2_00001
Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 5.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6
  • Package / Case: SOT-23-6
pacchetto: -
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MOSFET (Metal Oxide)
20 V
5.2A (Ta)
1.8V, 4.5V
1.3V @ 250µA
10 nC @ 4.5 V
980 pF @ 10 V
±12V
-
2W (Ta)
46mOhm @ 5.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
DMT6016LJ3
Diodes Incorporated

MOSFET BVDSS: 41V-60V TO251

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
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