Name: GT080N10KI
Brand: Goford Semiconductor
SKU: GT080N10KI
Availability: InStock
Rating: 5 (161 reviews)

GT080N10KI

Per Riferimento Soltanto

Numero di parte	GT080N10KI
Produttore	Goford Semiconductor
Descrizione	N100V,65A,RD<8M@10V,VTH1.0V~2.5V
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 30 - gen 4 (Scegli una spedizione rapida)
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Specifiche GT080N10KI

Produttore	Goford Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Corrente - Scarico continuo (Id) @ 25 ° C	65A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2394 pF @ 50 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	79W (Tc)
Rds On (Max) @ Id, Vgs	8mOhm @ 20A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	TO-252
Pacchetto / caso	TO-252-3, DPAK (2 Leads + Tab), SC-63

GT080N10KI Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GT080N10KI.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as GT080N10KI pin diagram, GT080N10KI datasheet?

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GT080N10KI

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