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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  57/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AUIRF7343Q
Infineon Technologies

MOSFET N/P-CH 55V 4.7/3.4A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC
Azione2.640
Logic Level Gate
55V
4.7A, 3.4A
50 mOhm @ 4.7A, 10V
1V @ 250µA
36nC @ 10V
740pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SO
hot IRFI4019HG-117P
Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO-220FP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
  • Power - Max: 18W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Full Pack (Formed Leads)
  • Supplier Device Package: TO-220-5 Full-Pak
pacchetto: TO-220-5 Full Pack (Formed Leads)
Azione48.108
Standard
150V
8.7A
95 mOhm @ 5.2A, 10V
4.9V @ 50µA
20nC @ 10V
810pF @ 25V
18W
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Full Pack (Formed Leads)
TO-220-5 Full-Pak
hot IRF7907PBF
Infineon Technologies

MOSFET 2N-CH 30V 9.1A/11A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
  • Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione9.756
Logic Level Gate
30V
9.1A, 11A
16.4 mOhm @ 9.1A, 10V
2.35V @ 25µA
10nC @ 4.5V
850pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF9956PBF
Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.248
Logic Level Gate
30V
3.5A
100 mOhm @ 2.2A, 10V
1V @ 250µA
14nC @ 10V
190pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ECH8619-TL-E
ON Semiconductor

MOSFET N/P-CH 60V 3A/2A ECH8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 2A
  • Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: 8-SMD, Flat Lead
Azione14.196
Logic Level Gate
60V
3A, 2A
93 mOhm @ 1.5A, 10V
-
12.8nC @ 10V
560pF @ 20V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
XN0187200L
Panasonic Electronic Components

MOSFET 2N-CH 50V 0.1A MINI-5

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: Mini5-G1
pacchetto: SC-74A, SOT-753
Azione2.144
Standard
50V
100mA
50 Ohm @ 20mA, 5V
3.5V @ 100µA
-
15pF @ 5V
300mW
150°C (TJ)
Surface Mount
SC-74A, SOT-753
Mini5-G1
hot SI4936ADY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4.4A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione15.996
Logic Level Gate
30V
4.4A
36 mOhm @ 5.9A, 10V
3V @ 250µA
20nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AON6924
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 15A/28A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A, 28A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
  • Power - Max: 2W, 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (5x6)
pacchetto: 8-WDFN Exposed Pad
Azione5.552
Logic Level Gate
30V
15A, 28A
5.2 mOhm @ 20A, 10V
2.3V @ 250µA
21nC @ 10V
1560pF @ 15V
2W, 2.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN-EP (5x6)
EMH2314-TL-H
ON Semiconductor

MOSFET 2P-CH 12V 5A EMH8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 6V
  • Power - Max: 1.2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-EMH
pacchetto: 8-SMD, Flat Lead
Azione2.656
Logic Level Gate
12V
5A
37 mOhm @ 2.5A, 4.5V
-
12nC @ 4.5V
1300pF @ 6V
1.2W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-EMH
SSM6N55NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN(2x2)
pacchetto: 6-WDFN Exposed Pad
Azione7.536
Logic Level Gate
30V
4A
46 mOhm @ 4A, 10V
2.5V @ 100µA
2.5nC @ 4.5V
280pF @ 15V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-µDFN(2x2)
SH8M13GZETB
Rohm Semiconductor

MIDDLE POWER MOSFET SERIES (DUAL

  • FET Type: N and P-Channel
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 7A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.264
-
30V
6A, 7A
29 mOhm @ 7A, 10V
2.5V @ 1mA
18nC @ 5V
1200pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QH8KA4TCR
Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione7.888
-
30V
9A
17 mOhm @ 7A, 4.5V
1.5V @ 1mA
12nC @ 4.5V
1400pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
BSL308CH6327XTSA1
Infineon Technologies

MOSFET N/P-CH 30V 2.3A/2A 6TSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione22.398
Logic Level Gate, 4.5V Drive
30V
2.3A, 2A
57 mOhm @ 2.3A, 10V
2V @ 11µA
1.5nC @ 10V
275pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
hot SH8M3TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A SOP8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione23.880
Logic Level Gate
30V
5A, 4.5A
51 mOhm @ 5A, 10V
2.5V @ 1mA
3.9nC @ 5V
230pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
EPC2108ENGRT
EPC

TRANS GAN 3N-CH BUMPED DIE

  • FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 60V, 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-VFBGA
  • Supplier Device Package: 9-BGA (1.35x1.35)
pacchetto: 9-VFBGA
Azione23.700
GaNFET (Gallium Nitride)
60V, 100V
1.7A, 500mA
190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
2.5V @ 100µA, 2.5V @ 20µA
0.22nC @ 5V, 0.044nC @ 5V
22pF @ 30V, 7pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
9-VFBGA
9-BGA (1.35x1.35)
hot FDMA1029PZ
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.1A MICROFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
pacchetto: 6-VDFN Exposed Pad
Azione1.449.780
Logic Level Gate
20V
3.1A
95 mOhm @ 3.1A, 4.5V
1.5V @ 250µA
10nC @ 4.5V
540pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-MicroFET (2x2)
hot SI7234DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 12V 60A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 6V
  • Power - Max: 46W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione50.460
Standard
12V
60A
3.4 mOhm @ 20A, 4.5V
1.5V @ 250µA
120nC @ 10V
5000pF @ 6V
46W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot DMN5L06DWK-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.305A SOT-363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione1.195.140
Logic Level Gate
50V
305mA
2 Ohm @ 50mA, 5V
1V @ 250µA
-
50pF @ 25V
250mW
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
FF4MR20KM1HHPSA1
Infineon Technologies

SIC 2N-CH 2000V AG-62MMHB

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 2000V (2kV)
  • Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 168mA
  • Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MMHB
pacchetto: -
Azione30
-
2000V (2kV)
280A (Tc)
5.3mOhm @ 300A, 18V
5.15V @ 168mA
1170nC @ 18V
36100pF @ 1.2kV
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-62MMHB
DMN3012LEG-7
Diodes Incorporated

MOSFET 2N-CH 30V 10A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
  • Power - Max: 2.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
pacchetto: -
Request a Quote
-
30V
10A (Ta), 20A (Tc)
12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
2.1V @ 250µA, 1.15V @ 250µA
6.1nC @ 4.5V, 12.6nC @ 4.5V
850pF @ 15V, 1480pF @ 15V
2.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PowerDI3333-8 (Type D)
2SD1936T-AC-SY
Sanyo

MOSFET P-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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PJT138K-AU_R1_000A1
Panjit International Inc.

MOSFET 2N-CH 50V 0.36A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 236mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione18.375
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50V
360mA (Ta)
1.6Ohm @ 500mA, 10V
1.5V @ 250µA
1nC @ 4.5V
50pF @ 25V
236mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SP8K32TB1
Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
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Logic Level Gate, 4V Drive
60V
4.5A (Ta)
65mOhm @ 4.5A, 10V
2.5V @ 1mA
10nC @ 5V
500pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
NDH8521C
Fairchild Semiconductor

MOSFET N/P-CH 30V 3.8A SUPERSOT

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 560pF @ 15V
  • Power - Max: 800mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSOP (0.130", 3.30mm Width)
  • Supplier Device Package: SuperSOT™-8
pacchetto: -
Request a Quote
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30V
3.8A (Ta), 2.7A (Ta)
33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V
2V @ 250µA
25nC @ 10V, 27nC @ 10V
500pF @ 15V, 560pF @ 15V
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSOP (0.130", 3.30mm Width)
SuperSOT™-8
MCB30P1200LB-TUB
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
pacchetto: -
Request a Quote
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1200V (1.2kV)
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Surface Mount
9-PowerSMD
9-SMPD-B
SIX3439KA-TPQ2
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Request a Quote
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20V
750mA, 600mA
300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V
1.1V @ 250µA
0.8nC @ 4.5V, 0.86nC @ 4.5V
33pF @ 16V, 40pF @ 16V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NTTFS5C471NLTAG
onsemi

MOSFET 40V U8FL

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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UPA1764G-E1-A
Renesas Electronics Corporation

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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