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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  56/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NSTJD1155LT1G
ON Semiconductor

MOSFET 2P-CH 8V 1.3A SC88

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione4.720
-
-
-
-
-
-
-
-
-
-
-
-
SI9936DY,518
NXP

MOSFET 2N-CH 30V 5A SOT96-1

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 900mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.248
Logic Level Gate
30V
5A
50 mOhm @ 5A, 10V
1V @ 250µA
35nC @ 10V
-
900mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NDS8858H
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.8A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione97.476
Logic Level Gate
30V
6.3A, 4.8A
35 mOhm @ 4.8A, 10V
2.8V @ 250µA
30nC @ 10V
720pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7317PBF
Infineon Technologies

MOSFET N/P-CH 20V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.152
Logic Level Gate
20V
6.6A, 5.3A
29 mOhm @ 6A, 4.5V
700mV @ 250µA
27nC @ 4.5V
900pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRFHS9351TRPBF
Infineon Technologies

MOSFET 2P-CH 30V 2.3A PQFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VQFN
  • Supplier Device Package: 6-PQFN (2x2)
pacchetto: 6-VQFN
Azione299.256
Logic Level Gate
30V
2.3A
170 mOhm @ 3.1A, 10V
2.4V @ 10µA
3.7nC @ 10V
160pF @ 25V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-VQFN
6-PQFN (2x2)
ALD212904SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.504
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
TPS1120DG4
Texas Instruments

MOSFET 2P-CH 15V 1.17A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 15V
  • Current - Continuous Drain (Id) @ 25°C: 1.17A
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 840mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.840
Logic Level Gate
15V
1.17A
180 mOhm @ 1.5A, 10V
1.5V @ 250µA
5.45nC @ 10V
-
840mW
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot AON4605
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 4.3A/3.4A 8DFN

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
  • Power - Max: 1.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-DFN (3x2)
pacchetto: 8-SMD, Flat Lead
Azione61.212
Logic Level Gate
30V
4.3A, 3.4A
50 mOhm @ 4.3A, 10V
2.5V @ 250µA
5nC @ 10V
210pF @ 15V
1.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-DFN (3x2)
DMMT3906WQ-7-F
Diodes Incorporated

MOSFET 2PCH 40V 200MA SOT363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 200mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione6.896
Standard
40V
200mA
-
-
-
-
200mW
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot SH8M41TB1
Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A SOP8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione21.264
Logic Level Gate
80V
3.4A, 2.6A
130 mOhm @ 3.4A, 10V
2.5V @ 1mA
9.2nC @ 5V
600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
AON7611
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 9A/18.5A 8DFN

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (3x3)
pacchetto: 8-PowerSMD, Flat Leads
Azione7.712
Logic Level Gate
30V
9A, 18.5A
50 mOhm @ 4A, 10V
2.5V @ 250µA
10nC @ 10V
170pF @ 15V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (3x3)
QS8M12TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 4A TSMT8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione2.208
Logic Level Gate
30V
4A
42 mOhm @ 4A, 10V
2.5V @ 1mA
3.4nC @ 5V
250pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot EM6K6T2R
Rohm Semiconductor

MOSFET 2N-CH 20V 0.3A EMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 300mA
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
pacchetto: SOT-563, SOT-666
Azione2.415.960
Logic Level Gate
20V
300mA
1 Ohm @ 300mA, 4V
1V @ 1mA
-
25pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
hot IRF7313PBF
Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.080
Standard
30V
6.5A
29 mOhm @ 5.8A, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SIZ998DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 20A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
  • Power - Max: 20.2W, 32.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
pacchetto: -
Azione11.700
-
30V
20A (Tc), 60A (Tc)
6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
2.2V @ 250µA
8.1nC @ 4.5V, 19.8nC @ 4.5V
930pF @ 15V, 2620pF @ 15V
20.2W, 32.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
MSCSM120HM31CTBL2NG
Microchip Technology

SIC 4N-CH 1200V 79A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 310W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
79A
31mOhm @ 40A, 20V
2.8V @ 1mA
232nC @ 20V
3020pF @ 1000V
310W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
SIL3724A-TP
Micro Commercial Co

MOSFET N/P-CH 30V 4.5A SOT23-6L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.08nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 365pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
pacchetto: -
Azione8.970
-
30V
4.5A, 3.5A
35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V
2.5V @ 250µA
6.08nC @ 15V
315pF @ 10V, 365pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
FDS6900AS-G
onsemi

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
Logic Level Gate
30V
6.9A, 8.2A
27mOhm @ 6.9A, 10V
3V @ 250µA, 3V @ 1mA
15nC @ 10V
600pF @ 15V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI3139KDWA-TP
Micro Commercial Co

MOSFET 2P-CH 20V 0.6A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione8.265
-
20V
600mA
850mOhm @ 500mA, 4.5V
1.1V @ 250µA
0.86nC @ 4.5V
40pF @ 16V
150mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BSS138AKDW-TP
Micro Commercial Co

MOSFET 2N-CH 50V 0.22A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 22800pF @ 25V
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione32.208
-
50V
220mA
3Ohm @ 500mA, 10V
1.45V @ 250µA
-
22800pF @ 25V
350mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
FDMW2512NZ
Fairchild Semiconductor

MOSFET 2N-CH 20V 7.2A 6MLP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V
  • Power - Max: 800mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-MLP (2x5)
pacchetto: -
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20V
7.2A (Ta)
26mOhm @ 7.2A, 4.5V
1.5V @ 250µA
13nC @ 10V
740pF @ 15V
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-MLP (2x5)
MMFT8472DW
Diotec Semiconductor

MOSFET SOT-363 N+P 50V 0.115A 10

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 115mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: SOT-363
pacchetto: -
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-
-
115mA
-
-
-
-
-
-
Surface Mount
-
SOT-363
DMN3032LFDBWQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (SWP) Type B
pacchetto: -
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30V
5.5A (Ta)
30mOhm @ 5.8A, 10V
2V @ 250µA
10.6nC @ 10V
500pF @ 15V
820mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (SWP) Type B
NTD4906NAT4H
onsemi

MOSFET N-CH 30V 54A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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-
-
-
-
-
-
-
-
-
-
-
-
KFC4B21080L
Nuvoton Technology Corporation

MOSFET 12V 2.9A 4CSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFLGA, CSP
  • Supplier Device Package: 4-CSP (1.11x1.11)
pacchetto: -
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12V
2.9A (Ta)
37mOhm @ 1.5A, 4.5V
1.4V @ 1mA
7.1nC @ 4V
850pF @ 10V
350mW (Ta)
150°C
Surface Mount
4-XFLGA, CSP
4-CSP (1.11x1.11)
SQ4920EY-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
  • Power - Max: 4.4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Azione6.447
-
30V
8A (Tc)
14.5mOhm @ 6A, 10V
2.5V @ 250µA
30nC @ 10V
1465pF @ 15V
4.4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FAM65CR51DZ1
onsemi

APM16-CDA SF3 650V 51MOHM AL2O3

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 3.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
  • Power - Max: 160W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SSIP Exposed Pad, Formed Leads
  • Supplier Device Package: APMCD-B16
pacchetto: -
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650V
33A (Tc)
51mOhm @ 20A, 10V
5V @ 3.3mA
123nC @ 10V
4864pF @ 400V
160W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
12-SSIP Exposed Pad, Formed Leads
APMCD-B16
MSCSM70XM75CTYZBNMG
Microchip Technology

PM-MOSFET-SIC-SBD-6HPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc), 52A (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA, 2.7V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V, 99nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 700V, 2010pF @ 700V
  • Power - Max: 90W (Tc), 141W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
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700V
31A (Tc), 52A (Tc)
75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V
2.4V @ 1mA, 2.7V @ 2mA
56nC @ 20V, 99nC @ 20V
1175pF @ 700V, 2010pF @ 700V
90W (Tc), 141W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
Module
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