Pagina 55 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  55/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF6723M2DTR1P
Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DirectFET? Isometric MA
  • Supplier Device Package: DIRECTFET? MA
pacchetto: DirectFET? Isometric MA
Azione5.808
Logic Level Gate
30V
15A
6.6 mOhm @ 15A, 10V
2.35V @ 25µA
14nC @ 4.5V
1380pF @ 15V
2.7W
-55°C ~ 175°C (TJ)
Surface Mount
DirectFET? Isometric MA
DIRECTFET? MA
hot IRF7304TR
Infineon Technologies

MOSFET 2P-CH 20V 4.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione430.128
Logic Level Gate
20V
4.3A
90 mOhm @ 2.2A, 4.5V
700mV @ 250µA
22nC @ 4.5V
610pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
UPA1764G-E2-AZ
Renesas Electronics America

MOSFET 2N-CH 60V 7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.173", 4.40mm Width)
Azione2.224
Standard
60V
7A
35 mOhm @ 3.5A, 10V
-
29nC @ 10V
1300pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
hot AON7932
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6.6A/8.1A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (3x3)
pacchetto: 8-WDFN Exposed Pad
Azione75.624
Logic Level Gate
30V
6.6A, 8.1A
20 mOhm @ 6.6A, 10V
2.4V @ 250µA
6.5nC @ 10V
460pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN-EP (3x3)
hot SI5902DC-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 2.9A 1206-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
pacchetto: 8-SMD, Flat Lead
Azione61.644
Logic Level Gate
30V
2.9A
85 mOhm @ 2.9A, 10V
1V @ 250µA (Min)
7.5nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SI3981DV-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 1.6A 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione1.401.540
Logic Level Gate
20V
1.6A
185 mOhm @ 1.9A, 4.5V
1.1V @ 250µA
5nC @ 4.5V
-
800mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
NTJD2152PT2G
ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 775mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione6.176
Logic Level Gate
8V
775mA
300 mOhm @ 570mA, 4.5V
1V @ 250µA
4nC @ 4.5V
225pF @ 8V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot AO4801A
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione489.972
Logic Level Gate
30V
5A
48 mOhm @ 5A, 10V
1.3V @ 250µA
9nC @ 4.5V
780pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
STL7DN6LF3
STMicroelectronics

MOSFET 2N-CH 60V 20A 5X6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V
  • Power - Max: 52W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
pacchetto: 8-PowerVDFN
Azione4.304
Logic Level Gate
60V
20A
43 mOhm @ 3A, 10V
3V @ 250µA
8.8nC @ 10V
432pF @ 25V
52W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)
DMC4029SSD-13
Diodes Incorporated

MOSFET N/P-CH 40V 7A/5.1A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.096
Logic Level Gate
40V
7A, 5.1A
24 mOhm @ 6A, 10V
3V @ 250µA
19.1nC @ 10V
1060pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FDMD82100L
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 7A 6-MLP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 50V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5
pacchetto: 12-PowerWDFN
Azione6.720
Logic Level Gate
100V
7A
19.5 mOhm @ 7A, 10V
3V @ 250µA
24nC @ 10V
1585pF @ 50V
1W
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWDFN
12-Power3.3x5
SQ4917EY-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2P-CH 60V 8SO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
  • Power - Max: 5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.272
Standard
60V
8A (Tc)
48 mOhm @ 4.3A, 10V
2.5V @ 250µA
65nC @ 10V
1910pF @ 30V
5W (Tc)
-55°C ~ 175°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NTLUD3A50PZTAG
ON Semiconductor

MOSFET 2P-CH 20V 2.8A UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
pacchetto: 6-UDFN Exposed Pad
Azione54.024
Logic Level Gate
20V
2.8A
50 mOhm @ 4A, 4.5V
1V @ 250µA
10.4nC @ 4.5V
920pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
6-UDFN (2x2)
hot QS6M3TR
Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TSMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione541.212
Logic Level Gate
30V, 20V
1.5A
230 mOhm @ 1.5A, 4.5V
1.5V @ 1mA
1.6nC @ 4.5V
80pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
TT8K11TCR
Rohm Semiconductor

MOSFET 2N-CH 30V 3A TSST8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1A
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
pacchetto: 8-SMD, Flat Lead
Azione5.616
Logic Level Gate, 4V Drive
30V
3A
71 mOhm @ 3A, 10V
2.5V @ 1A
2.5nC @ 5V
140pF @ 10V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
DMP1046UFDB-7
Diodes Incorporated

MOSFET 2P-CH 12V 3.8A 6UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: 6-UDFN Exposed Pad
Azione94.506
Standard
12V
3.8A
61 mOhm @ 3.6A, 4.5V
1V @ 250µA
17.9nC @ 8V
915pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
BSM120D12P2C005
Rohm Semiconductor

MOSFET 2N-CH 1200V 120A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 120A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.7V @ 22mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: Module
Azione4.992
Standard
1200V (1.2kV)
120A
-
2.7V @ 22mA
-
14000pF @ 10V
780W
-40°C ~ 150°C (TJ)
-
Module
Module
CMLDM7484 TR
Central Semiconductor Corp

MOSFET N/P-CH 30V 0.45A SOT-563

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 450mA
  • Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.79nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione189.744
Standard
30V
450mA
460 mOhm @ 200mA, 4.5V
1V @ 250µA
0.79nC @ 4.5V
45pF @ 25V
150mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
FDS8984-F40
onsemi

MOSFET 2N-CH 30V 7A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
  • Power - Max: 1.6W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Request a Quote
-
30V
7A (Ta)
23mOhm @ 7A, 10V
2.5V @ 250µA
13nC @ 10V
635pF @ 15V
1.6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI7530DP-T1-E3
Vishay Siliconix

MOSFET N/P-CH 60V 3A PPAK SO-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 4.6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W, 1.5W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
pacchetto: -
Request a Quote
Logic Level Gate
60V
3A, 3.2A
75mOhm @ 4.6A, 10V
3V @ 250µA
20nC @ 10V
-
1.4W, 1.5W
-
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
DMN53D0LDWQ-13
Diodes Incorporated

MOSFET 2N-CH 50V 0.46A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
  • Power - Max: 400mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
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50V
460mA (Ta)
1.6Ohm @ 500mA, 10V
1.5V @ 250µA
1.4nC @ 10V
49.5pF @ 25V
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NVMFD5C668NLWFT1G
onsemi

MOSFET 60V S08FL DUAL

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacchetto: -
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-
-
-
-
-
-
-
-
-
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
MCQ4503B-TP
Micro Commercial Co

MOSFET N/P-CH 30V 5.6A/4.4A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 4.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA, 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 680pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione1.266
-
30V
5.6A (Ta), 4.4A (Ta)
25mOhm @ 5.6A, 10V
1.5V @ 250µA, 1.4V @ 250µA
4.8nC @ 4.5V, 7.2nC @ 10V
535pF @ 15V, 680pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MSCSM70TLM19C3AG
Microchip Technology

SIC 4N-CH 700V 124A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
  • Power - Max: 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
pacchetto: -
Azione15
-
700V
124A (Tc)
19mOhm @ 40A, 20V
2.4V @ 4mA
215nC @ 20V
4500pF @ 700V
365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
DMTH6015LDVW-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
  • Power - Max: 1.46W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
pacchetto: -
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60V
9.2A (Ta), 24.5A (Tc)
20.5mOhm @ 10A, 10V
2.5V @ 250µA
14.3nC @ 10V
825pF @ 30V
1.46W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)
DI7A6N04SQ2
Diotec Semiconductor

MOSFET SO8 N 40V 0.028OHM 150C

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V
  • Power - Max: 3.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: -
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40V
7.6A (Tc)
28mOhm @ 7A, 10V
1.6V @ 250µA
18nC @ 10V
870pF @ 20V
3.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMP31D7LV-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
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30V
620mA (Ta)
900mOhm @ 420mA, 10V
2.6V @ 250µA
0.8nC @ 10V
19pF @ 15V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
BSM300D12P3E005
Rohm Semiconductor

SIC 2N-CH 1200V 300A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 5.6V @ 91mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
  • Power - Max: 1260W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Azione18
-
1200V (1.2kV)
300A (Tc)
-
5.6V @ 91mA
-
14000pF @ 10V
1260W (Tc)
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module