Pagina 201 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  201/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7751
Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione34.716
Logic Level Gate
30V
4.5A
35 mOhm @ 4.5A, 10V
2.5V @ 250µA
44nC @ 10V
1464pF @ 25V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI4942DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 40V 5.3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione105.588
Logic Level Gate
40V
5.3A
21 mOhm @ 7.4A, 10V
3V @ 250µA
32nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
GWM220-004P3-SL SAM
IXYS

MOSFET 6N-CH 40V 180A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Flat Leads
  • Supplier Device Package: ISOPLUS-DIL?
pacchetto: 17-SMD, Flat Leads
Azione2.336
Standard
40V
180A
-
4V @ 1mA
94nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Flat Leads
ISOPLUS-DIL?
hot SI1025X-T1-E3
Vishay Siliconix

MOSFET 2P-CH 60V 0.19A SOT563F

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 190mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
pacchetto: SOT-563, SOT-666
Azione3.029.664
Logic Level Gate
60V
190mA
4 Ohm @ 500mA, 10V
3V @ 250µA
1.7nC @ 15V
23pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
VHM40-06P1
IXYS

MOSFET 2N-CH 600V 38A ECO-PAC2

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 38A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
pacchetto: ECO-PAC2
Azione7.008
Standard
600V
38A
70 mOhm @ 25A, 10V
5.5V @ 3mA
220nC @ 10V
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC2
ECO-PAC2
ALD1103SBL
Advanced Linear Devices Inc.

MOSFET 2N/2P-CH 10.6V 14SOIC

  • FET Type: 2 N and 2 P-Channel Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA
  • Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
pacchetto: 14-SOIC (0.154", 3.90mm Width)
Azione6.360
Standard
10.6V
40mA, 16mA
75 Ohm @ 5V
1V @ 10µA
-
10pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot SI9926CDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.409.876
Logic Level Gate
20V
8A
18 mOhm @ 8.3A, 4.5V
1.5V @ 250µA
33nC @ 10V
1200pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
HP8KA1TB
Rohm Semiconductor

MOSFET 2N-CH 30V 14A HSOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
  • Power - Max: 3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
pacchetto: 8-PowerTDFN
Azione5.056
Logic Level Gate
30V
14A
5 mOhm @ 14A, 10V
2.5V @ 10mA
24nC @ 4.5V
2550pF @ 15V
3W
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
hot FDC6302P
Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.12A SSOT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 120mA
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione37.920
Logic Level Gate
25V
120mA
10 Ohm @ 200mA, 4.5V
1.5V @ 250µA
0.31nC @ 4.5V
11pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
QH8MA2TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 4.5A/3A TSMT8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione7.248
Logic Level Gate
30V
4.5A, 3A
35 mOhm @ 4.5A, 10V
2.5V @ 1mA
8.4nC @ 10V
365pF @ 10V
1.25W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot DMN5010VAK-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione36.000
Logic Level Gate
50V
280mA
2 Ohm @ 50mA, 5V
1V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
APTM100H45SCTG
Microsemi Corporation

MOSFET 4N-CH 1000V 18A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 18A
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
  • Power - Max: 357W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
pacchetto: SP4
Azione5.776
Standard
1000V (1kV)
18A
540 mOhm @ 9A, 10V
5V @ 2.5mA
154nC @ 10V
4350pF @ 25V
357W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot SI5517DU-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFET

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 8.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
pacchetto: PowerPAK? ChipFET? Dual
Azione7.704
Logic Level Gate
20V
6A
39 mOhm @ 4.4A, 4.5V
1V @ 250µA
16nC @ 8V
520pF @ 10V
8.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
hot SIA922EDJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4.5A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
pacchetto: PowerPAK? SC-70-6 Dual
Azione144.000
Logic Level Gate
30V
4.5A
64 mOhm @ 3A, 4.5V
1.4V @ 250µA
12nC @ 10V
-
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
PJT138L_R1_00001
Panjit International Inc.

MOSFET 2N-CH 60V 0.2A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Rds On (Max) @ Id, Vgs: 4.2Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 15V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione13.044
-
60V
200mA (Ta)
4.2Ohm @ 200mA, 10V
1.5V @ 250µA
0.7nC @ 4.5V
15pF @ 15V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMN52D0UVTQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacchetto: -
Request a Quote
-
50V
430mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
1.4nC @ 10V
41pF @ 25V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
NTTBC070NP10M5L
onsemi

MOSFET N/P-CH 100V 3.5A 8WDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V
  • Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-WDFN (3x3)
pacchetto: -
Azione8.028
-
100V
3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
3V @ 24µA, 4V @ 40µA
5.6nC @ 10V, 7.3nC @ 10V
252pF @ 50V, 256pF @ 50V
1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-WDFN (3x3)
PJQ5866A_R2_00001
Panjit International Inc.

MOSFET 2N-CH 60V 7A/40A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
  • Power - Max: 1.7W (Ta), 56W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
pacchetto: -
Azione8.184
-
60V
7A (Ta), 40A (Tc)
17mOhm @ 20A, 10V
2.5V @ 250µA
13.5nC @ 4.5V
1574pF @ 25V
1.7W (Ta), 56W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8
DMN2024UDH-7
Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
  • Power - Max: 950mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: U-DFN3030-8
pacchetto: -
Request a Quote
-
20V
5.2A (Ta)
23mOhm @ 6.5A, 4.5V
1V @ 250µA
7.1nC @ 4.5V
647pF @ 10V
950mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerUDFN
U-DFN3030-8
G120N03D32
Goford Semiconductor

MOSFET 2N-CH 30V 28A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V
  • Power - Max: 20W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (3.15x3.05)
pacchetto: -
Azione14.985
-
30V
28A (Tc)
12mOhm @ 10A, 10V
2.2V @ 250µA
18nC @ 10V
1089pF @ 15V
20W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (3.15x3.05)
DMNH6065SSD-13
Diodes Incorporated

MOSFET 2N-CH 60V 3.8A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: -
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-
60V
3.8A (Ta)
65mOhm @ 3A, 10V
3V @ 250µA
11.3nC @ 10V
446pF @ 30V
1.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NVMFWD024N06CT1G
onsemi

MOSFET 2N-CH 60V 8A/24A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
  • Power - Max: 3.1W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacchetto: -
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-
60V
8A (Ta), 24A (Tc)
22.6mOhm @ 3A, 10V
4V @ 20µA
5.7nC @ 10V
333pF @ 30V
3.1W (Ta), 28W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
NVMFD5C650NLWFT1G
onsemi

MOSFET 2N-CH 60V 21A/111A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 98µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
  • Power - Max: 3.5W (Ta), 125W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacchetto: -
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-
60V
21A (Ta), 111A (Tc)
4.2mOhm @ 20A, 10V
2.2V @ 98µA
16nC @ 4.5V
2546pF @ 25V
3.5W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
FF2MR12KM1PHOSA1
Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
  • Vgs(th) (Max) @ Id: 5.15V @ 224mA
  • Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MM
pacchetto: -
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1200V (1.2kV)
500A (Tc)
2.13mOhm @ 500A, 15V
5.15V @ 224mA
1340nC @ 15V
39700pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-62MM
MCQD08P06Y-TP
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 15V
  • Power - Max: 1.9W
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
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-
60V
8A
85mOhm @ 4.3A, 10V
2.5V @ 250µA
4.27nC @ 4.5V
505pF @ 15V
1.9W
-55°C ~ 150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
TSM8588CV-RGG
Taiwan Semiconductor Corporation

-60V, -4.5A, COMPLEMENTARY P-CHA

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione30.000
-
-
-
-
-
-
-
-
-
-
-
-
PJL9807_R2_00001
Panjit International Inc.

MOSFET 2P-CH 30V 4A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 15V
  • Power - Max: 1.7W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
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30V
4A (Ta)
52mOhm @ 3A, 10V
2.5V @ 250µA
4.8nC @ 4.5V
516pF @ 15V
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
AON5802BG
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 10A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
  • Power - Max: 3.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-DFN-EP (2x5)
pacchetto: -
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30V
10A (Ta)
18mOhm @ 7A, 4.5V
1.5V @ 250µA
32nC @ 10V
1050pF @ 15V
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-DFN-EP (2x5)