Pagina 183 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  183/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FW276-TL-2H
ON Semiconductor

MOSFET 2N-CH 450V 0.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 700mA
  • Rds On (Max) @ Id, Vgs: 12.1 Ohm @ 350mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 20V
  • Power - Max: 1.6W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.960
Logic Level Gate
450V
700mA
12.1 Ohm @ 350mA, 10V
4.5V @ 1mA
3.7nC @ 10V
55pF @ 20V
1.6W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot 2N7002DWA-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 180mA
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 115mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione38.400
Logic Level Gate
60V
180mA
6 Ohm @ 115mA, 10V
2.5V @ 250µA
0.87nC @ 10V
22pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot EFC4618R-TR
ON Semiconductor

MOSFET 2N-CH EFCP1818

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XBGA, 4-FCBGA
  • Supplier Device Package: EFCP1818-4CC-037
pacchetto: 4-XBGA, 4-FCBGA
Azione65.568
Standard
-
-
-
-
-
-
1.6W
150°C (TJ)
Surface Mount
4-XBGA, 4-FCBGA
EFCP1818-4CC-037
SI4923DY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 6.2A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.352
Logic Level Gate
30V
6.2A
21 mOhm @ 8.3A, 10V
3V @ 250µA
70nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot TPCF8304(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 3.2A VS-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)
pacchetto: 8-SMD, Flat Lead
Azione22.584
Logic Level Gate
30V
3.2A
72 mOhm @ 1.6A, 10V
1.2V @ 1mA
14nC @ 10V
600pF @ 10V
330mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
VS-8 (2.9x1.5)
hot NTMD6P02R2SG
ON Semiconductor

MOSFET 2P-CH 20V 4.8A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
  • Power - Max: 750mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione11.028
Logic Level Gate
20V
4.8A
33 mOhm @ 6.2A, 4.5V
1.2V @ 250µA
35nC @ 4.5V
1700pF @ 16V
750mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot FDW2512NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione150.540
Logic Level Gate
20V
6A
28 mOhm @ 6A, 4.5V
1.5V @ 250µA
12nC @ 4.5V
670pF @ 10V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
PMWD19UN,518
NXP

MOSFET 2N-CH 30V 5.6A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione7.936
Logic Level Gate
30V
5.6A
23 mOhm @ 3.5A, 4.5V
700mV @ 1mA
28nC @ 5V
1478pF @ 10V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
APTML602U12R020T3AG
Microsemi Corporation

MOSFET 2N-CH 600V 45A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 45A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Power - Max: 568W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
pacchetto: SP3
Azione4.816
Standard
600V
45A
150 mOhm @ 22.5A, 10V
4V @ 2.5mA
-
7600pF @ 25V
568W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
SQJ951EP-T1_GE3
Vishay Siliconix

MOSFET 2P-CH 30V 30A PPAK

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
  • Power - Max: 56W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione7.504
Standard
30V
30A
17 mOhm @ 7.5A, 10V
2.5V @ 250µA
50nC @ 10V
1680pF @ 10V
56W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
BUK7K8R7-40EX
Nexperia USA Inc.

MOSFET 2N-CH 40V 30A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1439pF @ 25V
  • Power - Max: 53W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: SOT-1205, 8-LFPAK56
Azione3.408
Standard
40V
30A
8.5 mOhm @ 15A, 10V
4V @ 1mA
21.8nC @ 10V
1439pF @ 25V
53W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot SP8K5FU6TB
Rohm Semiconductor

MOSFET 2N-CH 30V 3.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione18.096
Logic Level Gate
30V
3.5A
83 mOhm @ 3.5A, 10V
2.5V @ 1mA
3.5nC @ 5V
140pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot TSM6963SDCA RVG
TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -20V, -

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 5V
  • Power - Max: 1.14W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione36.000
Standard
20V
4.5A (Tc)
30 mOhm @ 4.5A, 4.5V
1V @ 250µA
20nC @ 4.5V
1500pF @ 5V
1.14W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
ALD310704SCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 380mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione6.240
Standard
8V
-
-
380mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
SI4830CDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
  • Power - Max: 2.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.400
Logic Level Gate
30V
8A
20 mOhm @ 8A, 10V
3V @ 1mA
25nC @ 10V
950pF @ 15V
2.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMT3009LDT-7
Diodes Incorporated

MOSFET 2N-CH 30V 30A V-DFN3030-8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 14.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: V-DFN3030-8 (Type K)
pacchetto: 8-VDFN Exposed Pad
Azione2.976
Standard
30V
30A
11.1 mOhm @ 14.4A, 10V
3V @ 250µA
20nC @ 15V
1500pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
V-DFN3030-8 (Type K)
hot DMG9926UDM-7
Diodes Incorporated

MOSFET 2N-CH 20V 4.2A SOT-26

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
  • Power - Max: 980mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: SOT-23-6
Azione3.840
Logic Level Gate
20V
4.2A
28 mOhm @ 8.2A, 4.5V
900mV @ 250µA
8.3nC @ 4.5V
856pF @ 10V
980mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
EM6M2T2R
Rohm Semiconductor

MOSFET N/P-CH 20V 0.2A EMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
pacchetto: SOT-563, SOT-666
Azione1.647.552
Logic Level Gate
20V
200mA
1 Ohm @ 200mA, 4V
1V @ 1mA
-
25pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
G220P03D32
Goford Semiconductor

MOSFET P+P-CH 30V12A 30W DFN3*3-

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
  • Power - Max: 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (3.15x3.05) Dual
pacchetto: -
Azione15.000
-
30V
12A (Tc)
22mOhm @ 3A, 10V
2V @ 250µA
25nC @ 10V
1305pF @ 15V
30W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (3.15x3.05) Dual
SSM5P15FU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A USV

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
pacchetto: -
Azione8.376
-
30V
100mA (Ta)
12Ohm @ 10mA, 4V
1.7V @ 100µA
-
9.1pF @ 3V
200mW (Ta)
150°C
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
SCH2817-TL-E
onsemi

NCH+SBD 1.8V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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CMS25NN03V8-HF
Comchip Technology

MOSFET 2N-CH 30V 25A 8DFN

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 15V
  • Power - Max: 1.7W (Ta), 20.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
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30V
25A
20mOhm @ 10A, 10V
2.5V @ 250µA
7.2nC @ 4.5V
572pF @ 15V
1.7W (Ta), 20.8W (Tc)
-55°C ~ 150°C
Surface Mount
8-PowerWDFN
8-PDFN (SPR-PAK ) (3.3x3.3)
SSM6P35AFU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
  • Power - Max: 285mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
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Azione17.970
Logic Level Gate, 1.2V Drive
20V
250mA (Ta)
1.4Ohm @ 150mA, 4.5V
1V @ 100µA
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42pF @ 10V
285mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SIA907EDJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V SMD

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
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DMT35M8LDG-7
Diodes Incorporated

MOSFET 2N-CH 30V 17A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
  • Power - Max: 980mW (Ta), 2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type G)
pacchetto: -
Azione6.000
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30V
17A (Ta), 15.3A (Ta)
4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
1.9V @ 250µA
22.7nC @ 10V, 16.3nC @ 10V
1510pF @ 15V, 1032pF @ 15V
980mW (Ta), 2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type G)
FF4MR20KM1HPHPSA1
Infineon Technologies

SIC 2N-CH 2000V AG-62MMHB

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 2000V (2kV)
  • Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 168mA
  • Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MMHB
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Azione30
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2000V (2kV)
280A (Tc)
5.3mOhm @ 300A, 18V
5.15V @ 168mA
1170nC @ 18V
36100pF @ 1.2kV
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-40°C ~ 175°C
Chassis Mount
Module
AG-62MMHB
DMN31D5UDJ-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.22A SOT963

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
pacchetto: -
Azione20.487
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30V
220mA (Ta)
1.5Ohm @ 100mA, 4.5V
1V @ 250µA
0.38nC @ 4.5V
22.6pF @ 15V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
MMFTN620KDW
Diotec Semiconductor

MOSFET SOT363 N+N 60V 0.35A 2OHM

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: SOT-363
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350mA
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Surface Mount
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SOT-363