Pagina 181 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FDS6984S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 8.5A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione406.992	Logic Level Gate	30V	5.5A, 8.5A	19 mOhm @ 8.5A, 10V	3V @ 250µA	12nC @ 5V	1233pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NDS8961	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 3.1A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione601.068	Logic Level Gate	30V	3.1A	100 mOhm @ 3.1A, 10V	3V @ 250µA	10nC @ 10V	190pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDW2507NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.5A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione754.212	Logic Level Gate	20V	7.5A	19 mOhm @ 7.5A, 4.5V	1.5V @ 250µA	28nC @ 4.5V	2152pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDS6961A_F011	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 3.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione4.544	Logic Level Gate	30V	3.5A	90 mOhm @ 3.5A, 10V	3V @ 250µA	4nC @ 5V	220pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IPG20N06S2L50ATMA1	Infineon Technologies	MOSFET 2N-CH 55V 20A TDSON-8-4 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 19µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power - Max: 51W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	pacchetto: 8-PowerVDFN	Azione5.696	Logic Level Gate	55V	20A	50 mOhm @ 15A, 10V	2V @ 19µA	17nC @ 10V	560pF @ 25V	51W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
APTM120A65FT1G	Microsemi Corporation	MOSFET 2N-CH 1200V 16A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 780 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione6.352	Standard	1200V (1.2kV)	16A	780 mOhm @ 14A, 10V	5V @ 2.5mA	300nC @ 10V	7736pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
TC7920K6-G	Microchip Technology	MOSFET 2N/2P-CH 200V 12VDFN FET Type: 2 N and 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 10 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x4)	pacchetto: 12-VFDFN Exposed Pad	Azione6.032	Standard	200V	-	10 Ohm @ 1A, 10V	2.4V @ 1mA	-	52pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	12-VFDFN Exposed Pad	12-DFN (4x4)
SI7872DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6.4A PPAK SO-8 FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione1.314.228	Logic Level Gate	30V	6.4A	22 mOhm @ 7.5A, 10V	3V @ 250µA	11nC @ 4.5V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
NTMFD4C20NT3G	ON Semiconductor	MOSFET 2N-CH 30V SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V Power - Max: 1.09W, 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	pacchetto: 8-PowerTDFN	Azione5.168	Standard	30V	9.1A, 13.7A	7.3 mOhm @ 10A, 10V	2.1V @ 250µA	9.3nC @ 4.5V	970pF @ 15V	1.09W, 1.15W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
FDMS9600S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/16A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	pacchetto: 8-PowerWDFN	Azione255.684	Logic Level Gate	30V	12A, 16A	8.5 mOhm @ 12A, 10V	3V @ 250µA	13nC @ 4.5V	1705pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
STL13DP10F6	STMicroelectronics	MOSFET 2P-CH 100V 13A PWRFLAT56 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 25V Power - Max: 62.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	pacchetto: 8-PowerVDFN	Azione4.576	Logic Level Gate	100V	13A	180 mOhm @ 1.7A, 10V	4V @ 250µA	16.5nC @ 10V	864pF @ 25V	62.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
ZXMN3A06DN8TA	Diodes Incorporated	MOSFET 2N-CH 30V 4.9A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione620.076	Logic Level Gate	30V	4.9A	35 mOhm @ 9A, 10V	1V @ 250µA (Min)	17.5nC @ 10V	796pF @ 25V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SI4909DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 40V 8A 8SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Power - Max: 3.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione8.064	Logic Level Gate	40V	8A	27 mOhm @ 8A, 10V	2.5V @ 250µA	63nC @ 10V	2000pF @ 20V	3.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMDPB30XN,115	Nexperia USA Inc.	MOSFET 2N-CH 20V 4A 6HUSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Power - Max: 490mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	pacchetto: 6-UDFN Exposed Pad	Azione2.240	Logic Level Gate	20V	4A	40 mOhm @ 3A, 4.5V	900mV @ 250µA	21.7nC @ 4.5V	660pF @ 10V	490mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
SI4554DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 40V 8A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 20V Power - Max: 3.1W, 3.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione7.200	Logic Level Gate	40V	8A	24 mOhm @ 6.8A, 10V	2.2V @ 250µA	20nC @ 10V	690pF @ 20V	3.1W, 3.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN63D0LT-7	Diodes Incorporated	MOSFET N-CH 100V SOT523 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione36.000	-	-	-	-	-	-	-	-	-	-	-	-
CMXDM7002A TR	Central Semiconductor Corp	MOSFET 2N-CH 60V 0.28A SOT26 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	pacchetto: SOT-23-6	Azione42.570	Standard	60V	280mA	2 Ohm @ 500mA, 10V	2.5V @ 250µA	0.59nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
ALD1101SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione6.444	Standard	10.6V	-	75 Ohm @ 5V	1V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
STS8C5H30L	STMicroelectronics	MOSFET N/P-CH 30V 8A/5.4A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione337.980	Logic Level Gate	30V	8A, 5.4A	22 mOhm @ 4A, 10V	1V @ 250µA	10nC @ 5V	857pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
QS6K21TR	Rohm Semiconductor	MOSFET 2N-CH 45V 1A TSMT6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione361.212	Standard	45V	1A	-	1.5V @ 1mA	-	-	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)
DMC1018UPDWQ-13	Diodes Incorporated	MOSFET N/P-CH 12V 20.9A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V Power - Max: 2.6W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	pacchetto: -	Azione5.472	-	12V, 20V	10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)	17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V	1.5V @ 250µA	30.4nC @ 8V, 19nC @ 8V	1525pF @ 6V, 866pF @ 6V	2.6W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
DMP2101UCB9-7	Diodes Incorporated	MOSFET 2P-CH 20V 9UWLB FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UPA1857GR-9JG-E1-A	Renesas Electronics Corporation	MOSFET 2N-CH 60V 3.8A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V Power - Max: 1.7W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: -	Request a Quote	Logic Level Gate	60V	3.8A	67mOhm @ 2A, 10V	2.5V @ 1mA	12nC @ 10V	580pF @ 10V	1.7W	-	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDMA1028NZ-F021	onsemi	MOSFET 2N-CH 20V 3.7A 6MICROFET FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	pacchetto: -	Azione9.000	Logic Level Gate	20V	3.7A	68mOhm @ 3.7A, 4.5V	1.5V @ 250µA	6nC @ 4.5V	340pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
APTMC120HR11CT3AG	Microchip Technology	SIC 2N-CH 1200V 26A SP3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Power - Max: 125W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	pacchetto: -	Request a Quote	-	1200V (1.2kV)	26A (Tc)	98mOhm @ 20A, 20V	3V @ 5mA	62nC @ 20V	950pF @ 1000V	125W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP3
MC7252KDWA-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 340mA, 180mA Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA, 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V, 30pF @ 5V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	60V, 50V	340mA, 180mA	5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V	2.5V @ 1mA, 2V @ 250µA	-	40pF @ 10V, 30pF @ 5V	150mW	-55°C ~ 150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC2700UDMQ-7	Diodes Incorporated	MOSFET N/P-CH 20V 1.34A SOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta), 1.14A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V, 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, 59.76pF @ 16V Power - Max: 1.12W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	pacchetto: -	Azione15.288	-	20V	1.34A (Ta), 1.14A (Ta)	400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V	1V @ 250µA	0.74nC @ 4.5V, 0.62nC @ 4.5V	60.67pF @ 16V, 59.76pF @ 16V	1.12W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
NTMFD5C466NLT1G	onsemi	MOSFET 2N-CH 40V 14A/52A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V Power - Max: 3W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	pacchetto: -	Request a Quote	-	40V	14A (Ta), 52A (Tc)	7.4mOhm @ 10A, 10V	2.2V @ 30µA	16nC @ 10V	997pF @ 25V	3W (Ta), 40W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)

FDS6984S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 8.5A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione406.992

Logic Level Gate

30V

5.5A, 8.5A

19 mOhm @ 8.5A, 10V

3V @ 250µA

12nC @ 5V

1233pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NDS8961

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.1A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione601.068

Logic Level Gate

30V

3.1A

100 mOhm @ 3.1A, 10V

3V @ 250µA

10nC @ 10V

190pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDW2507NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione754.212

Logic Level Gate

20V

7.5A

19 mOhm @ 7.5A, 4.5V

1.5V @ 250µA

28nC @ 4.5V

2152pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDS6961A_F011

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione4.544

Logic Level Gate

30V

3.5A

90 mOhm @ 3.5A, 10V

3V @ 250µA

4nC @ 5V

220pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IPG20N06S2L50ATMA1

Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8-4

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 19µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Power - Max: 51W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

pacchetto: 8-PowerVDFN

Azione5.696

Logic Level Gate

55V

20A

50 mOhm @ 15A, 10V

2V @ 19µA

17nC @ 10V

560pF @ 25V

51W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

APTM120A65FT1G

Microsemi Corporation

MOSFET 2N-CH 1200V 16A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 780 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione6.352

Standard

1200V (1.2kV)

16A

780 mOhm @ 14A, 10V

5V @ 2.5mA

300nC @ 10V

7736pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

TC7920K6-G

Microchip Technology

MOSFET 2N/2P-CH 200V 12VDFN

FET Type: 2 N and 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 10 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-VFDFN Exposed Pad
Supplier Device Package: 12-DFN (4x4)

pacchetto: 12-VFDFN Exposed Pad

Azione6.032

Standard

200V

-

10 Ohm @ 1A, 10V

2.4V @ 1mA

-

52pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

12-VFDFN Exposed Pad

12-DFN (4x4)

SI7872DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione1.314.228

Logic Level Gate

30V

6.4A

22 mOhm @ 7.5A, 10V

3V @ 250µA

11nC @ 4.5V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

NTMFD4C20NT3G

ON Semiconductor

MOSFET 2N-CH 30V SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Power - Max: 1.09W, 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

pacchetto: 8-PowerTDFN

Azione5.168

Standard

30V

9.1A, 13.7A

7.3 mOhm @ 10A, 10V

2.1V @ 250µA

9.3nC @ 4.5V

970pF @ 15V

1.09W, 1.15W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

FDMS9600S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/16A POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

pacchetto: 8-PowerWDFN

Azione255.684

Logic Level Gate

30V

12A, 16A

8.5 mOhm @ 12A, 10V

3V @ 250µA

13nC @ 4.5V

1705pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

STL13DP10F6

STMicroelectronics

MOSFET 2P-CH 100V 13A PWRFLAT56

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 25V
Power - Max: 62.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

pacchetto: 8-PowerVDFN

Azione4.576

Logic Level Gate

100V

13A

180 mOhm @ 1.7A, 10V

4V @ 250µA

16.5nC @ 10V

864pF @ 25V

62.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

ZXMN3A06DN8TA

Diodes Incorporated

MOSFET 2N-CH 30V 4.9A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione620.076

Logic Level Gate

30V

4.9A

35 mOhm @ 9A, 10V

1V @ 250µA (Min)

17.5nC @ 10V

796pF @ 25V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SI4909DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 40V 8A 8SO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione8.064

Logic Level Gate

40V

8A

27 mOhm @ 8A, 10V

2.5V @ 250µA

63nC @ 10V

2000pF @ 20V

3.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PMDPB30XN,115

Nexperia USA Inc.

MOSFET 2N-CH 20V 4A 6HUSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Power - Max: 490mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

pacchetto: 6-UDFN Exposed Pad

Azione2.240

Logic Level Gate

20V

4A

40 mOhm @ 3A, 4.5V

900mV @ 250µA

21.7nC @ 4.5V

660pF @ 10V

490mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

SI4554DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 40V 8A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 20V
Power - Max: 3.1W, 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione7.200

Logic Level Gate

40V

8A

24 mOhm @ 6.8A, 10V

2.2V @ 250µA

20nC @ 10V

690pF @ 20V

3.1W, 3.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN63D0LT-7

Diodes Incorporated

MOSFET N-CH 100V SOT523

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione36.000

-

CMXDM7002A TR

Central Semiconductor Corp

MOSFET 2N-CH 60V 0.28A SOT26

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

pacchetto: SOT-23-6

Azione42.570

Standard

60V

280mA

2 Ohm @ 500mA, 10V

2.5V @ 250µA

0.59nC @ 4.5V

50pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

ALD1101SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione6.444

Standard

10.6V

-

75 Ohm @ 5V

1V @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

STS8C5H30L

STMicroelectronics

MOSFET N/P-CH 30V 8A/5.4A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione337.980

Logic Level Gate

30V

8A, 5.4A

22 mOhm @ 4A, 10V

1V @ 250µA

10nC @ 5V

857pF @ 25V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

QS6K21TR

Rohm Semiconductor

MOSFET 2N-CH 45V 1A TSMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6 (SC-95)

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione361.212

Standard

45V

1A

-

1.5V @ 1mA

-

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSMT6 (SC-95)

DMC1018UPDWQ-13

Diodes Incorporated

MOSFET N/P-CH 12V 20.9A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
Power - Max: 2.6W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

pacchetto: -

Azione5.472

-

12V, 20V

10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)

17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V

1.5V @ 250µA

30.4nC @ 8V, 19nC @ 8V

1525pF @ 6V, 866pF @ 6V

2.6W (Ta), 25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

DMP2101UCB9-7

Diodes Incorporated

MOSFET 2P-CH 20V 9UWLB

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

UPA1857GR-9JG-E1-A

Renesas Electronics Corporation

MOSFET 2N-CH 60V 3.8A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V
Power - Max: 1.7W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: -

Request a Quote

Logic Level Gate

60V

3.8A

67mOhm @ 2A, 10V

2.5V @ 1mA

12nC @ 10V

580pF @ 10V

1.7W

-

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDMA1028NZ-F021

onsemi

MOSFET 2N-CH 20V 3.7A 6MICROFET

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

pacchetto: -

Azione9.000

Logic Level Gate

20V

3.7A

68mOhm @ 3.7A, 4.5V

1.5V @ 250µA

6nC @ 4.5V

340pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

APTMC120HR11CT3AG

Microchip Technology

SIC 2N-CH 1200V 26A SP3

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
Power - Max: 125W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3

pacchetto: -

Request a Quote

-

1200V (1.2kV)

26A (Tc)

98mOhm @ 20A, 20V

3V @ 5mA

62nC @ 20V

950pF @ 1000V

125W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

SP3

MC7252KDWA-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 340mA, 180mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA, 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V, 30pF @ 5V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

Request a Quote

-

60V, 50V

340mA, 180mA

5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V

2.5V @ 1mA, 2V @ 250µA

-

40pF @ 10V, 30pF @ 5V

150mW

-55°C ~ 150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC2700UDMQ-7

Diodes Incorporated

MOSFET N/P-CH 20V 1.34A SOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta), 1.14A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V, 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, 59.76pF @ 16V
Power - Max: 1.12W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

pacchetto: -

Azione15.288

-

20V

1.34A (Ta), 1.14A (Ta)

400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V

1V @ 250µA

0.74nC @ 4.5V, 0.62nC @ 4.5V

60.67pF @ 16V, 59.76pF @ 16V

1.12W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

NTMFD5C466NLT1G

onsemi

MOSFET 2N-CH 40V 14A/52A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Power - Max: 3W (Ta), 40W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

pacchetto: -

Request a Quote

-

40V

14A (Ta), 52A (Tc)

7.4mOhm @ 10A, 10V

2.2V @ 30µA

16nC @ 10V

997pF @ 25V

3W (Ta), 40W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)