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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  176/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MP6M14TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 8A/6A MPT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 6A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: MPT6
pacchetto: 6-SMD, Flat Leads
Azione7.904
Logic Level Gate, 4V Drive
30V
8A, 6A
25 mOhm @ 8A, 10V
2.5V @ 1mA
7.3nC @ 5V
470pF @ 10V
2W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
MPT6
hot SQ4946EY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 4.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione389.544
Logic Level Gate
60V
4.5A
55 mOhm @ 4.5A, 10V
3V @ 250µA
30nC @ 10V
-
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDG6304P_D87Z
Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.41A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 410mA
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione3.424
Logic Level Gate
25V
410mA
1.1 Ohm @ 410mA, 4.5V
1.5V @ 250µA
1.5nC @ 4.5V
62pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot TPIC1502DW
Texas Instruments

MOSFET 20V 1.5A DMOS 24-DW

  • FET Type: -
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 98pF @ 14V
  • Power - Max: 2.86W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 24-SOIC
pacchetto: 24-SOIC (0.295", 7.50mm Width)
Azione2.000
Logic Level Gate
20V
1.5A
300 mOhm @ 1.5A, 10V
2.2V @ 1mA
2.1nC @ 10V
98pF @ 14V
2.86W
-40°C ~ 150°C (TJ)
Surface Mount
24-SOIC (0.295", 7.50mm Width)
24-SOIC
BSO203PHXUMA1
Infineon Technologies

MOSFET 2P-CH 20V 7A 8DSO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.256
Logic Level Gate
20V
7A
21 mOhm @ 8.2A, 4.5V
1.2V @ 100µA
39nC @ 4.5V
3750pF @ 15V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-DSO-8
ALD111910SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 8SOIC

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.808
-
-
-
-
-
-
-
-
-
-
-
-
hot SI4505DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V/8V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 8V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione705.216
Logic Level Gate
30V, 8V
6A, 3.8A
18 mOhm @ 7.8A, 10V
1.8V @ 250µA
20nC @ 5V
-
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO8808A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.9A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione464.124
Logic Level Gate
20V
-
14 mOhm @ 8A, 10V
1V @ 250µA
17.9nC @ 4.5V
1810pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FW344A-TL-2W
ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Power - Max: 1.7W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione144.000
Logic Level Gate, 4V Drive
30V
4.5A, 3.5A
64 mOhm @ 4.5A, 10V
-
5.6nC @ 10V
280pF @ 10V
1.7W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMN3035LWN-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V V-DFN3020-

  • FET Type: 2 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: V-DFN3020-8
pacchetto: 8-PowerVDFN
Azione5.072
Standard
-
5.5A (Ta)
35 mOhm @ 4.8A, 10V
2V @ 250µA
4.5nC @ 4.5V
399pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
V-DFN3020-8
NTZD3155CT1H
ON Semiconductor

MOSFET N/P-CH 20V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563-6
pacchetto: SOT-563, SOT-666
Azione7.776
Standard
20V
540mA, 430mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
2.5nC @ 4.5V
150pF @ 16V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563-6
hot FDMS3664S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/25A 8-PQFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 25A
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
pacchetto: 8-PowerTDFN
Azione2.141.112
Logic Level Gate
30V
13A, 25A
8 mOhm @ 13A, 10V
2.7V @ 250µA
29nC @ 10V
1765pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
ALD110802PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.2V
  • Vgs(th) (Max) @ Id: 220mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
pacchetto: 16-DIP (0.300", 7.62mm)
Azione7.552
Standard
10.6V
-
500 Ohm @ 4.2V
220mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
BSL316CH6327XTSA1
Infineon Technologies

MOSFET N/P-CH 30V 1.4A/1.5A TSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione68.490
Logic Level Gate, 4.5V Drive
30V
1.4A, 1.5A
160 mOhm @ 1.4A, 10V
2V @ 3.7µA
0.6nC @ 5V
282pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
ALD110814SCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V
  • Vgs(th) (Max) @ Id: 1.42V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione6.168
Standard
10.6V
12mA, 3mA
500 Ohm @ 5.4V
1.42V @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
DMTH6010LPD-13
Diodes Incorporated

MOSFET 2N-CHA 60V 13.1A POWERDI

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
pacchetto: 8-PowerTDFN
Azione19.092
Standard
60V
13.1A (Ta), 47.6A (Tc)
11 mOhm @ 20A, 10V
3V @ 250µA
40.2nC @ 10V
2615pF @ 30V
2.8W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
DMN3022LDG-13
Diodes Incorporated

MOSFET 2N-CH 30V 7.6A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
  • Power - Max: 1.96W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
pacchetto: -
Request a Quote
-
30V
7.6A (Ta), 15A (Tc)
22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
2.1V @ 250µA, 1.2V @ 250µA
3.7nC @ 4.5V, 8nC @ 4.5V
481pF @ 15V, 996pF @ 15V
1.96W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PowerDI3333-8 (Type D)
SSFK3220B
Good-Ark Semiconductor

MOSFET 2 N-CH 20V 0.8A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
  • Power - Max: 275mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione17.700
Logic Level Gate, 1.5V Drive
20V
800mA (Tc)
300mOhm @ 500mA, 4.5V
1V @ 250µA
2nC @ 4.5V
75pF @ 10V
275mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SI6926ADQ-T1-BE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.1A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: -
Azione26.955
-
20V
4.1A (Ta)
30mOhm @ 4.5A, 4.5V
1V @ 250µA
10.5nC @ 4.5V
-
830mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
DMC3732UVT-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
  • Power - Max: 540mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacchetto: -
Request a Quote
-
30V
1.1A (Ta), 700mA (Ta)
460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
0.95V @ 250µA, 1.1V @ 250µA
0.9nC @ 4.5V, 1.6nC @ 8V
40.8pF @ 25V, 54pF @ 15V
540mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
XP2531GY
YAGEO XSEMI

MOSFET N AND P-CH 16V 3.5A 2.5A

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 10V
  • Power - Max: 1.14W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: -
Azione3.000
-
16V
3.5A (Ta), 2.5A (Ta)
58mOhm @ 3A, 4.5V
1V @ 250µA
12nC @ 4.5V
585pF @ 10V
1.14W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
UPA2751GR-E1-AT
Renesas Electronics Corporation

MOSFET 2N-CH 30V 9A/8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 8A
  • Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-PSOP
pacchetto: -
Request a Quote
Logic Level Gate
30V
9A, 8A
15.5mOhm @ 4.5A, 10V
2.5V @ 1mA
21nC @ 10V
1040pF @ 10V
2W
-
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-PSOP
MSCSM170HRM075NG
Microchip Technology

SIC 4N-CH 1700V/1200V 337A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 337A (Tc), 317A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 15mA, 2.8V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V, 928nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V, 12100pF @ 1000V
  • Power - Max: 1.492kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1700V (1.7kV), 1200V (1.2kV)
337A (Tc), 317A (Tc)
7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V
3.2V @ 15mA, 2.8V @ 12mA
1068nC @ 20V, 928nC @ 20V
19800pF @ 1000V, 12100pF @ 1000V
1.492kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
STMFS4854NST1G-ON
onsemi

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
KFCAB21520LE
Nuvoton Technology Corporation

DUAL NCH MOSFET 12, 16A, 1.6MOHM

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.64mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V
  • Power - Max: 540mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-SMD
pacchetto: -
Azione3.000
-
12V
16A (Ta)
2mOhm @ 8A, 4.5V
1.4V @ 1.64mA
38nC @ 4V
5250pF @ 10V
540mW (Ta)
150°C
Surface Mount
10-SMD, No Lead
10-SMD
DI017P03PT2-AQ
Diotec Semiconductor

IC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V
  • Power - Max: 13.1W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-QFN (3x3)
pacchetto: -
Request a Quote
Logic Level Gate
30V
17A (Tc)
30mOhm @ 10A, 10V
2.5V @ 250µA
19.8nC @ 10V
1150pF @ 20V
13.1W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
8-QFN (3x3)
CCB021M12FM3
Wolfspeed, Inc.

SIC 6N-CH 1200V 51A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 51A
  • Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione177
-
1200V (1.2kV)
51A
27.9mOhm @ 30A, 15V
3.6V @ 17.7mA
162nC @ 15V
4900pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
QS6K1FRATR
Rohm Semiconductor

MOSFET 2N-CH 30V 1A TSMT6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
  • Power - Max: 900mW (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
pacchetto: -
Azione42.042
Logic Level Gate, 2.5V Drive
30V
1A (Ta)
238mOhm @ 1A, 4.5V
1.5V @ 1mA
2.4nC @ 4.5V
77pF @ 10V
900mW (Tc)
150°C
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)