Pagina 144 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  144/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AOD607_DELTA
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V TO252-4

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V, 37 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V
  • Power - Max: 25W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4L
pacchetto: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Azione6.576
Standard
30V
12A (Tc)
25 mOhm @ 12A, 10V, 37 mOhm @ 12A, 10V
2.5V @ 250µA, 2.4V @ 250µA
12.5nC @ 4.5V, 11.7nC @ 4.5V
1250pF @ 15V, 1100pF @ 15V
25W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-5, DPak (4 Leads + Tab), TO-252AD
TO-252-4L
GWM100-01X1-SL
IXYS

MOSFET 6N-CH 100V 90A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Flat Leads
  • Supplier Device Package: ISOPLUS-DIL?
pacchetto: 17-SMD, Flat Leads
Azione6.560
Standard
100V
90A
8.5 mOhm @ 80A, 10V
4.5V @ 250µA
90nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Flat Leads
ISOPLUS-DIL?
APTM20TDUM16PG
Microsemi Corporation

MOSFET 6N-CH 200V 104A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 104A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
pacchetto: SP6
Azione4.608
Standard
200V
104A
19 mOhm @ 52A, 10V
5V @ 2.5mA
140nC @ 10V
7220pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
hot SI1023X-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 0.37A SOT563F

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 370mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
pacchetto: SOT-563, SOT-666
Azione1.215.624
Logic Level Gate
20V
370mA
1.2 Ohm @ 350mA, 4.5V
450mV @ 250µA (Min)
1.5nC @ 4.5V
-
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
hot SSD2025TF
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 3.3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione378.300
Logic Level Gate
60V
3.3A
100 mOhm @ 3.3A, 10V
1V @ 250µA
30nC @ 10V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot PMGD370XN,115
Nexperia USA Inc.

MOSFET 2N-CH 30V 0.74A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 740mA
  • Rds On (Max) @ Id, Vgs: 440 mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
  • Power - Max: 410mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione116.400
Logic Level Gate
30V
740mA
440 mOhm @ 200mA, 4.5V
1.5V @ 250µA
0.65nC @ 4.5V
37pF @ 25V
410mW
-55°C ~ 175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
PHKD3NQ10T,518
Nexperia USA Inc.

MOSFET 2N-CH 100V 3A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.312
Logic Level Gate
100V
3A
90 mOhm @ 1.5A, 10V
4V @ 1mA
21nC @ 10V
633pF @ 20V
2W
-65°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
EFC6602R-A-TR
ON Semiconductor

MOSFET 2N-CH EFCP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA
  • Supplier Device Package: 6-EFCP (2.7x1.81)
pacchetto: 6-XFBGA
Azione5.440
Logic Level Gate, 2.5V Drive
-
-
-
-
55nC @ 4.5V
-
2W
150°C (TJ)
Surface Mount
6-XFBGA
6-EFCP (2.7x1.81)
CSD87313DMST
Texas Instruments

MOSFET ARRAY 2N-CH 30V 8WSON

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-WSON (3.3x3.3)
pacchetto: 8-PowerWDFN
Azione6.400
Standard
30V
-
-
1.2V @ 250µA
28nC @ 4.5V
4290pF @ 15V
2.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-WSON (3.3x3.3)
SQ1912EH-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 20V SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione6.480
Standard
20V
800mA (Tc)
280 mOhm @ 1.2A, 4.5V
1.5V @ 250µA
1.15nC @ 4.5V
75pF @ 10V
1.5W
-55°C ~ 175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
ALD111933PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.9V
  • Vgs(th) (Max) @ Id: 3.35V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione6.108
Standard
10.6V
-
500 Ohm @ 5.9V
3.35V @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot SI6968BEDQ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 5.2A 8TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione246.168
Logic Level Gate
20V
5.2A
22 mOhm @ 6.5A, 4.5V
1.6V @ 250µA
18nC @ 4.5V
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SP8J2TB
Rohm Semiconductor

MOSFET 2P-CH 30V 4.5A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione19.044
Logic Level Gate
30V
4.5A
56 mOhm @ 4.5A, 10V
2.5V @ 1mA
8.5nC @ 5V
850pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN3015LSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 8.4A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.480
Standard
30V
8.4A (Ta)
15 mOhm @ 12A, 10V
2.5V @ 250µA
25.1nC @ 10V
1415pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4946BEY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 6.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
  • Power - Max: 3.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione582.864
Logic Level Gate
60V
6.5A
41 mOhm @ 5.3A, 10V
3V @ 250µA
25nC @ 10V
840pF @ 30V
3.7W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMG6968UDM-7
Diodes Incorporated

MOSFET 2N-CH 20V 6.5A SOT-26

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Power - Max: 850mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: SOT-23-6
Azione360.012
Logic Level Gate
20V
6.5A
24 mOhm @ 6.5A, 4.5V
900mV @ 250µA
8.8nC @ 4.5V
143pF @ 10V
850mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
KGF16N05D-400W
Renesas Electronics Corporation

MOSFET 2N-CH 5.5V 16A 20WLCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 5.5V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5V
  • Power - Max: 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-UFLGA, CSP
  • Supplier Device Package: 20-WLCSP (2.48x1.17)
pacchetto: -
Request a Quote
-
5.5V
16A (Tj)
1.9mOhm @ 8A, 4.5V
900mV @ 250µA
5.5nC @ 4.5V
600pF @ 5V
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
20-UFLGA, CSP
20-WLCSP (2.48x1.17)
MCH6631-TL-E-SY
Sanyo

MOSFET N/P-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
NTTFD9D0N06HLTWG
onsemi

MOSFET 2N-CH 60V 9A/38A 12WQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V
  • Power - Max: 1.7W (Ta), 26W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWQFN
  • Supplier Device Package: 12-WQFN (3.3x3.3)
pacchetto: -
Azione8.547
-
60V
9A (Ta), 38A (Tc)
9mOhm @ 10A, 10V
2V @ 50µA
13.5nC @ 10V
948pF @ 30V
1.7W (Ta), 26W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWQFN
12-WQFN (3.3x3.3)
EFC2K112NUZTDG
onsemi

MOSFET N-CH 12V 32A WLCSP DUAL

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
BSS8402DWQ-13
Diodes Incorporated

MOSFET N/P-CH 60V/50V SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V, 50V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), 130mA (Ta)
  • Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione29.940
-
60V, 50V
115mA (Ta), 130mA (Ta)
13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
2.5V @ 250µA, 2V @ 1mA
-
50pF @ 25V, 45pF @ 25V
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMC2053UFDB-13
Diodes Incorporated

MOSFET N/P-CH 20V 4.6A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
  • Power - Max: 820mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: -
Request a Quote
-
20V
4.6A (Ta), 3.1A (Ta)
35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
1V @ 250µA
7.7nC @ 10V, 12.7nC @ 8V
369pF @ 10V, 440pF @ 10V
820mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SCH2806-TL-E
onsemi

NCH+SBD 1.8V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
BSO150N03MDGXUMA1
Infineon Technologies

MOSFET 2N-CH 30V 8A 8DSO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
pacchetto: -
Azione87.285
Logic Level Gate
30V
8A
15mOhm @ 9.3A, 10V
2V @ 250µA
17nC @ 10V
1300pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
G450N10D52
Goford Semiconductor

MOSFET 100V 35A 8DFN

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2196pF @ 50V
  • Power - Max: 80W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (4.9x5.75)
pacchetto: -
Azione14.700
-
100V
35A (Tc)
45mOhm @ 10A, 10V
2.5V @ 250µA
26nC @ 10V
2196pF @ 50V
80W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (4.9x5.75)
MCB60P1200TLB-TRR
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
pacchetto: -
Request a Quote
-
1200V (1.2kV)
-
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
DMG1023UVQ-13
Diodes Incorporated

MOSFET 2P-CH 20V 1.03A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V
  • Power - Max: 530mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Request a Quote
-
20V
1.03A (Ta)
750mOhm @ 430mA, 4.5V
1V @ 250µA
0.622nC @ 4.5V
59pF @ 16V
530mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
MSCSM170AM23CT1AG
Microchip Technology

SIC 2N-CH 1700V 124A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
  • Power - Max: 602W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1700V (1.7kV)
124A (Tc)
22.5mOhm @ 60A, 20V
3.2V @ 5mA
356nC @ 20V
6600pF @ 1000V
602W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-