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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  146/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AO4884L_001
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 10A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.264
Logic Level Gate
40V
10A
13 mOhm @ 10A, 10V
2.7V @ 250µA
33nC @ 10V
1950pF @ 20V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI3983DV-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 2.1A 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione156.012
Logic Level Gate
20V
2.1A
110 mOhm @ 2.5A, 4.5V
1.1V @ 250µA
7.5nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
APTM50DHM65TG
Microsemi Corporation

MOSFET 2N-CH 500V 51A SP4

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 51A
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
pacchetto: SP4
Azione2.016
Standard
500V
51A
78 mOhm @ 25.5A, 10V
5V @ 2.5mA
140nC @ 10V
7000pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
ZVN4206NTC
Diodes Incorporated

MOSFET 2N-CH 60V SOT-223-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SOT-223
pacchetto: SOT-223-8
Azione6.368
Standard
60V
-
-
-
-
-
-
-
Surface Mount
SOT-223-8
SOT-223
hot FDC6432SH
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V/12V SSOT-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A, 2.5A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione120.012
Logic Level Gate
30V, 12V
2.4A, 2.5A
90 mOhm @ 2.4A, 10V
3V @ 1mA
3.5nC @ 5V
270pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
hot SP8M7TB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/7A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 7A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.420
Logic Level Gate
30V
5A, 7A
51 mOhm @ 5A, 10V
2.5V @ 1mA
5.5nC @ 5V
230pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
APTC60AM24SCTG
Microsemi Corporation

MOSFET 2N-CH 600V 95A SP4

  • FET Type: 2 N Channel (Phase Leg)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
pacchetto: SP4
Azione3.248
Super Junction
600V
95A
24 mOhm @ 47.5A, 10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
DMN2016LHAB-7
Diodes Incorporated

MOSFET 2N-CH 20V 7.5A 6UDFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6
pacchetto: 6-UDFN Exposed Pad
Azione4.240
Logic Level Gate
20V
7.5A
15.5 mOhm @ 4A, 4.5V
1.1V @ 250µA
16nC @ 4.5V
1550pF @ 10V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2030-6
DMC1030UFDBQ-13
Diodes Incorporated

MOSFET N/P-CH 12V 5.1A UDFN2020

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: 6-UDFN Exposed Pad
Azione6.992
Standard
12V
5.1A
34 mOhm @ 4.6A, 4.5V
1V @ 250µA
23.1nC @ 10V
1003pF @ 6V
1.36W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN32D4SDW-13
Diodes Incorporated

MOSFET 2N-CH 30V 0.65A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 650mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 290mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione2.720
Standard
30V
650mA
400 mOhm @ 250mA, 10V
1.6V @ 250µA
1.3nC @ 10V
50pF @ 15V
290mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot SI4228DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione89.808
Logic Level Gate
25V
8A
18 mOhm @ 7A, 10V
1.4V @ 250µA
25nC @ 10V
790pF @ 12.5V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSG0811NDATMA1
Infineon Technologies

MOSFET 2N-CH 25V 19A/41A 8TISON

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 19A, 41A
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8
pacchetto: 8-PowerTDFN
Azione3.472
Logic Level Gate, 4.5V Drive
25V
19A, 41A
3 mOhm @ 20A, 10V
2V @ 250µA
8.4nC @ 4.5V
1100pF @ 12V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PG-TISON-8
hot FDMC7200
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6A/8A POWER33

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 8A
  • Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Power - Max: 700mW, 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
pacchetto: 8-PowerWDFN
Azione431.520
Logic Level Gate
30V
6A, 8A
23.5 mOhm @ 6A, 10V
3V @ 250µA
10nC @ 10V
660pF @ 15V
700mW, 900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
QS8K11TCR
Rohm Semiconductor

4V DRIVE NCH+NCH MOSFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione21.924
-
30V
3.5A
50 mOhm @ 3.5A, 10V
2.5V @ 1mA
3.3nC @ 5V
180pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
BUK9K29-100E,115
Nexperia USA Inc.

MOSFET 2N-CH 100V 30A LFPAK56D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3491pF @ 25V
  • Power - Max: 68W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: SOT-1205, 8-LFPAK56
Azione60.558
Logic Level Gate
100V
30A
27 mOhm @ 10A, 10V
2.1V @ 1mA
54nC @ 10V
3491pF @ 25V
68W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot FDS89161LZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 2.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione15.252
Logic Level Gate
100V
2.7A
105 mOhm @ 2.7A, 10V
2.2V @ 250µA
5.3nC @ 10V
302pF @ 50V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDG6306P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.6A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione543.504
Logic Level Gate
20V
600mA
420 mOhm @ 600mA, 4.5V
1.5V @ 250µA
2nC @ 4.5V
114pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
DMN63D1LV-13
Diodes Incorporated

MOSFET 2N-CH 60V 0.55A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.392nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 940mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Request a Quote
-
60V
550mA (Ta)
2Ohm @ 500mA, 10V
2.5V @ 1mA
0.392nC @ 4.5V
30pF @ 25V
940mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
TSM150NB04DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 8A/38A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V
  • Power - Max: 2W (Ta), 40W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
pacchetto: -
Azione1.269
-
40V
8A (Ta), 38A (Tc)
15mOhm @ 8A, 10V
4V @ 250µA
18nC @ 10V
1132pF @ 20V
2W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
5HP01M-TL-EX
onsemi

MOSFET P-CH 50V 0.07A MCP3

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
FF45MR12W1M1B11BOMA1
Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM-2

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
  • Vgs(th) (Max) @ Id: 5.55V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1BM-2
pacchetto: -
Request a Quote
-
1200V (1.2kV)
25A (Tj)
45mOhm @ 25A, 15V (Typ)
5.55V @ 10mA
62nC @ 15V
1840pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1BM-2
DI003N03SQ2
Diotec Semiconductor

MOSFET SO-8 N 30V 0.05OHM 150C

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: -
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-
-
3A
-
-
-
-
1.6W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
HT8KB5TB1
Rohm Semiconductor

40V 12A, DUAL NCH+NCH, HSMT8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
  • Power - Max: 2W (Ta), 13W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-HSMT (3.2x3)
pacchetto: -
Azione3.000
-
40V
5A (Ta), 12A (Tc)
47mOhm @ 5A, 10V
2.5V @ 1mA
3.5nC @ 10V
150pF @ 20V
2W (Ta), 13W (Tc)
150°C (TJ)
Surface Mount
8-PowerVDFN
8-HSMT (3.2x3)
UPA2792AGR-E1-AT
Renesas Electronics Corporation

MOSFET N/P-CH 30V 10A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
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Logic Level Gate
30V
10A
12.5mOhm @ 5A, 10V
-
42nC @ 10V
2200pF @ 10V
2W
150°C (TJ)
Surface Mount
8-PowerSOIC (0.173", 4.40mm Width)
8-SOP
SISF00DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 60A PPAK 12

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
  • Power - Max: 69.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8SCD Dual
  • Supplier Device Package: PowerPAK® 1212-8SCD Dual
pacchetto: -
Azione61.611
-
30V
60A (Tc)
5mOhm @ 10A, 10V
2.1V @ 250µA
53nC @ 10V
2700pF @ 15V
69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SCD Dual
PowerPAK® 1212-8SCD Dual
FDS6898AZ-F085
onsemi

MOSFET 2N-CH 20V 9.4A 8SOIC

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MSCSM120TAM11CTPAG
Microchip Technology

SIC 6N-CH 1200V 251A SP6-P

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
  • Power - Max: 1.042kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6-P
pacchetto: -
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-
1200V (1.2kV)
251A (Tc)
10.4mOhm @ 120A, 20V
2.8V @ 3mA
696nC @ 20V
9060pF @ 1000V
1.042kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6-P
DMP3165SVTQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V
  • Power - Max: 1.08W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacchetto: -
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-
30V
2.7A (Ta)
95mOhm @ 2.7A, 10V
2.2V @ 250µA
6.8nC @ 10V
287pF @ 15V
1.08W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26