Pagina 118 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  118/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF6156
Infineon Technologies

MOSFET 2N-CH 20V 6.5A FLIP-FET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-FlipFet?
  • Supplier Device Package: 6-FlipFet?
pacchetto: 6-FlipFet?
Azione33.840
Logic Level Gate
20V
6.5A
40 mOhm @ 6.5A, 4.5V
1.2V @ 250µA
18nC @ 5V
950pF @ 15V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
6-FlipFet?
6-FlipFet?
SI4947ADY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.312
Logic Level Gate
30V
3A
80 mOhm @ 3.9A, 10V
1V @ 250µA (Min)
8nC @ 5V
-
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI6928DQ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 4A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione219.360
Logic Level Gate
30V
4A
35 mOhm @ 4A, 10V
1V @ 250µA
14nC @ 5V
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
GWM160-0055P3
IXYS

MOSFET 6N-CH 55V 160A ISODIL

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 160A
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL?
  • Supplier Device Package: ISOPLUS-DIL?
pacchetto: ISOPLUS-DIL?
Azione4.944
Standard
55V
160A
3 mOhm @ 100A, 10V
4V @ 1mA
90nC @ 10V
-
-
-40°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL?
ISOPLUS-DIL?
APTM120A15FG
Microsemi Corporation

MOSFET 2N-CH 1200V 60A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
pacchetto: SP6
Azione7.808
Standard
1200V (1.2kV)
60A
175 mOhm @ 30A, 10V
5V @ 10mA
748nC @ 10V
20600pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50HM35FG
Microsemi Corporation

MOSFET 4N-CH 500V 99A SP6

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 99A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
pacchetto: SP6
Azione7.392
Standard
500V
99A
39 mOhm @ 49.5A, 10V
5V @ 5mA
280nC @ 10V
14000pF @ 25V
781W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
VMM45-02F
IXYS

MOSFET 2N-CH 200V 45A TO-240AA

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 45A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Power - Max: 190W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
  • Supplier Device Package: TO-240AA
pacchetto: TO-240AA
Azione6.272
Standard
200V
45A
45 mOhm @ 22.5A, 10V
4V @ 4mA
225nC @ 10V
7500pF @ 25V
190W
-40°C ~ 150°C (TJ)
Chassis Mount
TO-240AA
TO-240AA
APTC60DSKM70T1G
Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

  • FET Type: 2 N Channel (Dual Buck Chopper)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
pacchetto: SP1
Azione3.840
Super Junction
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
700pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
EFC2J017NUZTDG
ON Semiconductor

MOSFET 2N-CH 6WLCSP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WLCSP (1.77x3.05)
pacchetto: 6-XFBGA, WLCSP
Azione7.904
Logic Level Gate, 2.5V Drive
-
-
-
1.3V @ 1mA
95nC @ 4.5V
-
2.5W
150°C (TJ)
Surface Mount
6-XFBGA, WLCSP
6-WLCSP (1.77x3.05)
BSS8402DWQ-7
Diodes Incorporated

MOSFET N/P-CH 60V/50V

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V, 50V
  • Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
  • Rds On (Max) @ Id, Vgs: 13.5 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione4.752
Logic Level Gate
60V, 50V
115mA, 130mA
13.5 Ohm @ 500mA, 10V
2.5V @ 250µA
-
50pF @ 25V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot FDS3992
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 4.5A 8-SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.136
Standard
100V
4.5A
62 mOhm @ 4.5A, 10V
4V @ 250µA
15nC @ 10V
750pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BUK9K25-40EX
Nexperia USA Inc.

MOSFET 2N-CH 40V 18.2A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 18.2A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
  • Power - Max: 32W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: SOT-1205, 8-LFPAK56
Azione22.866
Logic Level Gate
40V
18.2A
24 mOhm @ 5A, 10V
2.1V @ 1mA
6.3nC @ 5V
701pF @ 25V
32W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot NTHD4508NT1G
ON Semiconductor

MOSFET 2N-CH 20V 3A CHIPFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Power - Max: 1.13W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
pacchetto: 8-SMD, Flat Lead
Azione595.740
Logic Level Gate
20V
3A
75 mOhm @ 3.1A, 4.5V
1.2V @ 250µA
4nC @ 4.5V
180pF @ 10V
1.13W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
hot DMN5L06VK-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione6.741.552
Logic Level Gate
50V
280mA
2 Ohm @ 50mA, 5V
1V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN2710UDWQ-13
Diodes Incorporated

MOSFET 2N-CH 20V 0.8A SOT363

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
  • Power - Max: 360mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Request a Quote
-
20V
800mA (Ta)
450mOhm @ 600mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V
42pF @ 16V
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
MCH6630-TL-E
Sanyo

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
KGF6N05D-400
Renesas Electronics Corporation

MOSFET 2N-CH 5.5V 12A 20WLCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 5.5V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 3.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 5.5V
  • Power - Max: 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-UFLGA, CSP
  • Supplier Device Package: 20-WLCSP (2.48x1.17)
pacchetto: -
Request a Quote
-
5.5V
12A (Ta)
3mOhm @ 6A, 4.5V
900mV @ 250µA
4nC @ 3.5V
630pF @ 5.5V
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
20-UFLGA, CSP
20-WLCSP (2.48x1.17)
AONY36356
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 17.5A/32A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
  • Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
pacchetto: -
Azione8.601
-
30V
17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
6.1mOhm @ 20A, 10V
2.1V @ 250µA
20nC @ 10V
920pF @ 15V
2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
NVMFD5C446NLT1G
onsemi

MOSFET 2N-CH 40V 25A/145A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
  • Power - Max: 3.5W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacchetto: -
Azione3.033
-
40V
25A (Ta), 145A (Tc)
2.65mOhm @ 20A, 10V
2.2V @ 90µA
25nC @ 4.5V
3170pF @ 25V
3.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
DMTH10H038SPDW-13
Diodes Incorporated

MOSFET 2N-CH 100V 25A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V
  • Power - Max: 2.7W (Ta), 39W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
pacchetto: -
Request a Quote
-
100V
25A (Tc)
33mOhm @ 10A, 10V
4V @ 250µA
8nC @ 10V
544pF @ 50V
2.7W (Ta), 39W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
PJX8802_R1_00001
Panjit International Inc.

MOSFET 2N-CH 20V 0.7A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
  • Power - Max: 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Azione11.787
-
20V
700mA (Ta)
150mOhm @ 700mA, 4.5V
1V @ 250µA
1.6nC @ 4.5V
92pF @ 10V
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
CBB032M12FM3T
Wolfspeed, Inc.

SIC 4N-CH 1200V 39A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 15V
  • Vgs(th) (Max) @ Id: 3.9V @ 11mA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 1000V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione150
-
1200V (1.2kV)
39A (Tj)
44mOhm @ 30A, 15V
3.9V @ 11mA
118nC @ 15V
3500pF @ 1000V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
BUK9MRR-65PKK-518
Nexperia USA Inc.

MOSFET 2N-CH 65V 4.8A 20SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 65V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Rds On (Max) @ Id, Vgs: 60.7mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 712pF @ 25V
  • Power - Max: 3.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
pacchetto: -
Request a Quote
Logic Level Gate
65V
4.8A (Tc)
60.7mOhm @ 3A, 10V
2V @ 1mA
8.8nC @ 5V
712pF @ 25V
3.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SO
2N7002KDWA-TP
Micro Commercial Co

MOSFET 2N-CH 60V 0.34A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 340mA
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Request a Quote
-
60V
340mA
5Ohm @ 500mA, 10V
2.5V @ 1mA
-
40pF @ 10V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
UPA1759G-E1-AT
Renesas Electronics Corporation

MOSFET 2N-CH 60V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-PSOP
pacchetto: -
Request a Quote
Logic Level Gate
60V
5A
150mOhm @ 2.5A, 10V
2.5V @ 1mA
8nC @ 10V
190pF @ 10V
2W
-
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-PSOP
MKE38P600TLB-TRR
IXYS

MOSFET ISOPLUS-SMPD

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD™.B
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
Surface Mount
9-SMD Module
ISOPLUS-SMPD™.B
MSCSM120AM08CT3AG
Microchip Technology

SIC 2N-CH 1200V 337A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
  • Power - Max: 1.409kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
pacchetto: -
Request a Quote
-
1200V (1.2kV)
337A (Tc)
7.8mOhm @ 160A, 20V
2.8V @ 4mA
928nC @ 20V
12.08pF @ 1000V
1.409kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
DMTH45M5SPDW-13
Diodes Incorporated

MOSFET 2N-CH 40V 79A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
  • Power - Max: 3.3W (Ta), 60W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
pacchetto: -
Azione6.570
-
40V
79A (Tc)
5.5mOhm @ 25A, 10V
3.5V @ 250µA
13.2nC @ 10V
1083pF @ 20V
3.3W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)