Pagina 121 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  121/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
LN100LA-G
Microchip Technology

MOSFET 2N-CH 1200V

  • FET Type: 2 N-Channel (Cascoded)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 3000 Ohm @ 2mA, 2.8V
  • Vgs(th) (Max) @ Id: 1.6V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 350mW
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VFLGA
  • Supplier Device Package: 6-LFGA (3x3)
pacchetto: 6-VFLGA
Azione3.232
Standard
1200V (1.2kV)
-
3000 Ohm @ 2mA, 2.8V
1.6V @ 10µA
-
50pF @ 25V
350mW
-25°C ~ 125°C (TJ)
Surface Mount
6-VFLGA
6-LFGA (3x3)
ECH8672-TL-H
ON Semiconductor

MOSFET 2P-CH 20V 3.5A ECH8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: 8-SMD, Flat Lead
Azione3.664
Logic Level Gate
20V
3.5A
85 mOhm @ 1.5A, 4.5V
-
4nC @ 4.5V
320pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
SI4814BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 10A 8SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.3W, 3.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.224
Logic Level Gate
30V
10A, 10.5A
18 mOhm @ 10A, 10V
3V @ 250µA
10nC @ 4.5V
-
3.3W, 3.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDY3001NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 0.2A SOT-563F

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
  • Power - Max: 446mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
pacchetto: SOT-563, SOT-666
Azione3.200
Logic Level Gate
20V
200mA
5 Ohm @ 200mA, 4.5V
1.5V @ 250µA
1.1nC @ 4.5V
60pF @ 10V
446mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
APTM50A15FT1G
Microsemi Corporation

MOSFET 2N-CH 500V 25A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
pacchetto: SP1
Azione3.776
Standard
500V
25A
180 mOhm @ 21A, 10V
5V @ 1mA
170nC @ 10V
5448pF @ 25V
208W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
BSD340NH6327XTSA1
Infineon Technologies

SMALL SIGNAL+P-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione6.816
-
-
-
-
-
-
-
-
-
Surface Mount
6-TSSOP, SC-88, SOT-363
PG-SOT363-6
APTM20HM10FG
Microsemi Corporation

MOSFET 4N-CH 200V 175A SP6

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
pacchetto: SP6
Azione6.992
Standard
200V
175A
12 mOhm @ 87.5A, 10V
5V @ 5mA
224nC @ 10V
13700pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
hot AO8814
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.5A 8TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione13.163.304
Logic Level Gate
20V
-
16 mOhm @ 7.5A, 10V
1V @ 250µA
15.4nC @ 4.5V
1390pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI1926DL-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 0.37A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 370mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-3 (SOT323)
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione186.012
Logic Level Gate
60V
370mA
1.4 Ohm @ 340mA, 10V
2.5V @ 250µA
1.4nC @ 10V
18.5pF @ 30V
510mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-3 (SOT323)
APTM100A13SCG
Microsemi Corporation

MOSFET 2N-CH 1000V 65A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 65A
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
pacchetto: SP6
Azione4.544
Standard
1000V (1kV)
65A
156 mOhm @ 32.5A, 10V
5V @ 6mA
562nC @ 10V
15200pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
DMP3036SSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 10.6A 8-SO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.992
Logic Level Gate
30V
10.6A
20 mOhm @ 9A, 10V
3V @ 250µA
16.5nC @ 10V
1931pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO4616
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8A/7A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 7A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione11.284.092
Logic Level Gate
30V
8A, 7A
20 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
EPC2106ENGRT
EPC

TRANS GAN 2N-CH 100V BUMPED DIE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione230.418
GaNFET (Gallium Nitride)
100V
1.7A
70 mOhm @ 2A, 5V
2.5V @ 600µA
0.73nC @ 5V
75pF @ 50V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
hot PMGD290XN,115
Nexperia USA Inc.

MOSFET 2N-CH 20V 0.86A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 860mA
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V
  • Power - Max: 410mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione142.200
Logic Level Gate
20V
860mA
350 mOhm @ 200mA, 4.5V
1.5V @ 250µA
0.72nC @ 4.5V
34pF @ 20V
410mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
CAS380M17HM3
Wolfspeed, Inc.

SIC 2N-CH 1700V 532A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 532A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 152mA
  • Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Azione3
-
1700V (1.7kV)
532A (Tc)
3.74mOhm @ 380A, 15V
3.6V @ 152mA
1494nC @ 15V
4700pF @ 1200V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
FDMA2002NZ_F130
onsemi

MOSFET 2N-CH 30V 2.9A 6MICROFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
  • Power - Max: 650mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
pacchetto: -
Request a Quote
Logic Level Gate
30V
2.9A
123mOhm @ 2.9A, 4.5V
1.5V @ 250µA
3nC @ 4.5V
220pF @ 15V
650mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-MicroFET (2x2)
SI1967DH-T1-BE3
Vishay Siliconix

MOSFET 2P-CH 20V 1A/1.3A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 740mW (Ta), 1.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
pacchetto: -
Azione3.129
-
20V
1A (Ta), 1.3A (Tc)
490mOhm @ 910mA, 4.5V
1V @ 250µA
4nC @ 10V
110pF @ 10V
740mW (Ta), 1.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
TSM680P06DPQ56
Taiwan Semiconductor Corporation

MOSFET 2P-CH 60V 12A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
  • Power - Max: 3.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
pacchetto: -
Request a Quote
-
60V
12A (Tc)
68mOhm @ 6A, 10V
2.5V @ 250µA
16.4nC @ 10V
870pF @ 30V
3.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
NVMFD5C674NLWFT1G
onsemi

MOSFET 2N-CH 60V 11A/42A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
  • Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Power - Max: 3W (Ta), 37W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacchetto: -
Azione4.500
-
60V
11A (Ta), 42A (Tc)
14.4mOhm @ 10A, 10V
2.2V @ 25µA
4.7nC @ 4.5V
640pF @ 25V
3W (Ta), 37W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
MCQ4828A-TP
Micro Commercial Co

MOSFET 2N-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione108.660
-
60V
4.5A (Ta)
56mOhm @ 4.5A, 10V
3V @ 250µA
10.5nC @ 10V
540pF @ 30V
1.25W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2046UVT-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
  • Power - Max: 590mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacchetto: -
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20V
2.6A (Ta)
90mOhm @ 3.6A, 4.5V
1.4V @ 250µA
7.4nC @ 10V
278pF @ 10V
590mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
MMFTN620KD
Diotec Semiconductor

IC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: -
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Logic Level Gate
60V
350mA
1.5Ohm @ 500mA, 10V
1.5V @ 250µA
1.3nC @ 10V
35pF @ 25V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SOT-26
BSM450D12P4G102
Rohm Semiconductor

SIC 2N-CH 1200V 447A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 447A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4.8V @ 218.4mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 44000pF @ 10V
  • Power - Max: 1.45kW (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Azione12
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1200V (1.2kV)
447A (Tc)
-
4.8V @ 218.4mA
-
44000pF @ 10V
1.45kW (Tc)
175°C (TJ)
Chassis Mount
Module
Module
IRF7904TRPBF-1
Infineon Technologies

MOSFET 2N-CH 30V 7.6A/11A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
  • Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
  • Power - Max: 1.4W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: -
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Logic Level Gate
30V
7.6A, 11A
16.2mOhm @ 7.6A, 10V
2.25V @ 25µA
11nC @ 4.5V
910pF @ 15V
1.4W, 2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
MSCSM120VR1M11CT6AG
Microchip Technology

SIC 2N-CH 1200V 251A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
  • Power - Max: 1.042kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
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1200V (1.2kV)
251A (Tc)
10.4mOhm @ 120A, 20V
2.8V @ 9mA
696nC @ 20V
9000pF @ 1000V
1.042kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
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NVMFD5C462NT1G
onsemi

MOSFET 2N-CH 40V 17.6A/70A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 70A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
  • Power - Max: 3.2W (Ta), 50W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacchetto: -
Azione2.700
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40V
17.6A (Ta), 70A (Tc)
5.4mOhm @ 25A, 10V
3.5V @ 250µA
16nC @ 10V
1020pF @ 25V
3.2W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
MSCSM70VR1M19C1AG
Microchip Technology

SIC 2N-CH 700V 124A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
  • Power - Max: 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
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700V
124A (Tc)
19mOhm @ 40A, 20V
2.4V @ 4mA
215nC @ 20V
4500pF @ 700V
365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
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MSCSM170AM039CD3AG
Microchip Technology

SIC 2N-CH 1700V 523A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
  • Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
  • Power - Max: 2.4kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
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1700V (1.7kV)
523A (Tc)
5mOhm @ 270A, 20V
3.3V @ 22.5mA
1602nC @ 20V
29700pF @ 1000V
2.4kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
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