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Prodotti Toshiba Semiconductor and Storage

Record 4.549
Pagina  149/163
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
TK4A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.5A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione7.680
TPCP8004(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 8.3A PS-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 840mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 4.2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PS-8 (2.9x2.4)
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione2.720
TK13A55DA(STA4,QM)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 12.5A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione7.216
SSM6L39TU,LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A UF6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 143 mOhm @ 600MA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
pacchetto: 6-SMD, Flat Leads
Azione2.256
2SC6042,T2HOSH1Q(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 375V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 375V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
pacchetto: SC-71
Azione2.688
TTC0002(Q)
Toshiba Semiconductor and Storage

TRANS NPN 160V 18A TO-3PL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 18A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 180W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
pacchetto: TO-3PL
Azione5.424
2SC6026CT-Y(TPL3)
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.1A CST3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
pacchetto: SC-101, SOT-883
Azione3.376
RN1313(TE85L,F)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W USM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
pacchetto: SC-70, SOT-323
Azione5.312
RN1115MFV,L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT723

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
pacchetto: SOT-723
Azione79.776
RN4987FE,LF(CB
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacchetto: SOT-563, SOT-666
Azione6.448
1SV307(TPH3,F)
Toshiba Semiconductor and Storage

SWITCHING DIODE 30V 2 USC

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 30V
  • Current - Max: 50mA
  • Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
  • Resistance @ If, F: 1.5 Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 125°C (TJ)
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
pacchetto: SC-76, SOD-323
Azione103.566
CMF01(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 2A MFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: SOD-128
Azione2.256
THGBMHG9C8LBAWG
Toshiba Semiconductor and Storage

IC FLASH 512GBIT 52MHZ 153WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: MMC
  • Clock Frequency: 52MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-WFBGA
  • Supplier Device Package: 153-WFBGA (11.5x13)
pacchetto: 153-WFBGA
Azione6.480
TC7WH123FKTE85LF
Toshiba Semiconductor and Storage

IC MULTIVIBRATOR MONOSTABLE US8

  • Logic Type: Monostable
  • Independent Circuits: 1
  • Schmitt Trigger Input: No
  • Propagation Delay: 10.3ns
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
  • Supplier Device Package: US8
pacchetto: 8-VFSOP (0.091", 2.30mm Width)
Azione6.640
TC74HC592APF
Toshiba Semiconductor and Storage

IC COUNTER/REG CMOS 8-BIT 16DIP

  • Logic Type: Binary Counter
  • Direction: Up
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Reset: Asynchronous
  • Timing: -
  • Count Rate: 35MHz
  • Trigger Type: Positive Edge
  • Voltage - Supply: 2 V ~ 6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
pacchetto: 16-DIP (0.300", 7.62mm)
Azione6.592
TC75S58FUTE85LF
Toshiba Semiconductor and Storage

IC COMP SNGL GP PP CMOS USV

  • Type: General Purpose
  • Number of Elements: 1
  • Output Type: Open Drain
  • Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
  • Voltage - Input Offset (Max): 7mV @ 5V
  • Current - Input Bias (Max): 1pA @ 5V
  • Current - Output (Typ): 25mA
  • Current - Quiescent (Max): 20µA
  • CMRR, PSRR (Typ): -
  • Propagation Delay (Max): 800ns
  • Hysteresis: -
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
pacchetto: 5-TSSOP, SC-70-5, SOT-353
Azione44.142
DF3D6.8MFV,L3F
Toshiba Semiconductor and Storage

TVS DIODE 5VWM 15VC VESM

  • Type: Steering (Rail to Rail)
  • Unidirectional Channels: 2
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V (Max)
  • Voltage - Breakdown (Min): 6V
  • Voltage - Clamping (Max) @ Ipp: 15V (Typ)
  • Current - Peak Pulse (10/1000µs): 1A (8/20µs)
  • Power - Peak Pulse: -
  • Power Line Protection: Yes
  • Applications: General Purpose
  • Capacitance @ Frequency: 0.5pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
pacchetto: SOT-723
Azione5.994
TLP109(IGM-TPR,E)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 25% @ 10mA
  • Current Transfer Ratio (Max): 75% @ 10mA
  • Turn On / Turn Off Time (Typ): 450ns, 450ns
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 20V
  • Current - Output / Channel: 8mA
  • Voltage - Forward (Vf) (Typ): 1.64V
  • Current - DC Forward (If) (Max): 20mA
  • Vce Saturation (Max): -
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
  • Supplier Device Package: 6-SO, 5 Lead
pacchetto: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Azione8.262
TC7MPB9326FT(EL)
Toshiba Semiconductor and Storage

PB-F LOW VOLTAGE/LOW POWER DUAL

  • Type: Bus Switch
  • Circuit: 2 x 1:2
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Dual Supply
  • Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOP
pacchetto: 14-TSSOP (0.173", 4.40mm Width)
Azione3.312
TCR2LE28,LM(CT
Toshiba Semiconductor and Storage

200MA LDO VOUT2.8V DROPOUT220MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.616
TK1K2A60F-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 6A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Request a Quote
TCK126BG-LF
Toshiba Semiconductor and Storage

LOAD SWITCH IC, V=1.0V-5.5V, IOU

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: On/Off
  • Voltage - Load: 1V ~ 5.5V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1A
  • Rds On (Typ): 343mOhm
  • Input Type: Non-Inverting
  • Features: Slew Rate Controlled
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 4-XFBGA, CSPBGA
  • Supplier Device Package: 4-WCSPG (0.65x0.65)
pacchetto: -
Azione10.014
2SA2060-TE12L-ZF
Toshiba Semiconductor and Storage

TRANS PNP 50V 2A PW-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
pacchetto: -
Request a Quote
SSM3J375F-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A S-MINI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione68.580
TCR2EN30-LF-SE
Toshiba Semiconductor and Storage

LDO REG VOUT=3.0V IOUT=200MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.18V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
pacchetto: -
Azione59.850
2SC4116-GR-LXHF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SC70

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
pacchetto: -
Azione17.790
CRS20I40B-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A S-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: 62pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: -
Azione2.514
TKR74F04PB-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 250A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione6.852