Prodotti Toshiba Semiconductor and Storage

TK31J60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 30.8A TO-3P(N)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 88 mOhm @ 15.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)
• Package / Case: TO-3P-3, SC-65-3

pacchetto: TO-3P-3, SC-65-3

TK20V60W5,LVQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 156W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (8x8)
• Package / Case: 4-VSFN Exposed Pad

pacchetto: 4-VSFN Exposed Pad

2SC2655-Y,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

2SC2229-O(MITIF,M)

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

2SA2154CT-GR,L3F

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.1A

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

pacchetto: SC-101, SOT-883

2SC4116-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USM

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

pacchetto: SC-70, SOT-323

RN1102MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.15W VESM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

pacchetto: SOT-723

RN2967FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

pacchetto: SOT-563, SOT-666

RN2712JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

• Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

pacchetto: SOT-553

1SS389,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA ESC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 10V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20µA @ 10V
• Capacitance @ Vr, F: 40pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: ESC
• Operating Temperature - Junction: 125°C (Max)

pacchetto: SC-79, SOD-523

CMS01(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A MFLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 370mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)
• Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: SOD-128

1SS382TE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA USQ

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-82
• Supplier Device Package: -

pacchetto: SC-82

TA48015BF(T6L1,NQ)

Toshiba Semiconductor and Storage

IC REG LINEAR 1.5V 1A PW-MOLD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 1.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.9V @ 1A (Typ)
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.7mA ~ 20mA
• PSRR: 65dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

TCK22891G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.4 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 400mA
• Rds On (Typ): 31 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UFBGA, WLCSP
• Supplier Device Package: 6-WCSPE (0.80x1.2)

pacchetto: 6-UFBGA, WLCSP

TB67S105FTG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel, Serial
• Technology: Power MOSFET
• Step Resolution: 1, 1/2
• Applications: General Purpose
• Current - Output: 2.4A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 40 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-WFQFN Exposed Pad
• Supplier Device Package: 48-WQFN (7x7)

pacchetto: 48-WFQFN Exposed Pad

TC7WP3125FC(TE85L)

Toshiba Semiconductor and Storage

IC BUS SWITCH SPST DUAL CST8

• Type: Bus Switch
• Circuit: 2 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: 12mA, 12mA
• Voltage Supply Source: Dual Supply
• Voltage - Supply: 1.1 V ~ 2.7 V, 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-XFDFN Exposed Pad
• Supplier Device Package: CST8

pacchetto: 8-XFDFN Exposed Pad

TC74LCX125FT(EL)

Toshiba Semiconductor and Storage

IC BUS BUFFER QDLV N-INV 14TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

TC75W60FU(TE12L,F)

Toshiba Semiconductor and Storage

IC OPAMP GP 8SSOP

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 5.1 V/µs
• Gain Bandwidth Product: -
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 2mV
• Current - Supply: 660µA
• Current - Output / Channel: 1.25mA
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: SM8

pacchetto: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

TLBF1108(T11(O

Toshiba Semiconductor and Storage

LED BLUE 4SMD

• Color: Blue
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: 560mcd
• Lens Style/Size: Oval with Flat Top
• Voltage - Forward (Vf) (Typ): 3.5V
• Current - Test: 40mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 470nm
• Wavelength - Peak: 468nm
• Features: -
• Package / Case: 4-SMD, J-Lead
• Supplier Device Package: -
• Size / Dimension: 3.20mm L x 2.90mm W
• Height (Max): 2.10mm

pacchetto: 4-SMD, J-Lead

TC35662IXBG(EL)

Toshiba Semiconductor and Storage

COMBO WIRELESS CHIP SUPPORTING W

• Type: TxRx + MCU
• RF Family/Standard: Bluetooth, WiFi
• Protocol: 802.11a/b/g/n, Bluetooth v4.2
• Modulation: -
• Frequency: 2.4GHz
• Data Rate (Max): 150Mbps
• Power - Output: 18dBm
• Sensitivity: -95dBm
• Memory Size: -
• Serial Interfaces: I2C, I2S, SPI, UART, USB
• GPIO: -
• Voltage - Supply: 3.3V
• Current - Receiving: -
• Current - Transmitting: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: -

pacchetto: -

TB67S249FTG,EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER IC WITH ACT

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (8)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
• Applications: General Purpose
• Current - Output: 4.5A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 47 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

pacchetto: 48-VFQFN Exposed Pad

TBD62304APG,HZ

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

pacchetto: 16-DIP (0.300", 7.62mm)

74VHC02FT

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14TSSOPB

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5V
• Logic Level - High: 1.5V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOPB
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

TB9120FTG(EL)

Toshiba Semiconductor and Storage

AUTOMOTIVE STEPPING MOTOR DRIVER

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver
• Output Configuration: Pre-Driver - Half Bridge (2)
• Interface: PWM
• Technology: Bi-CMOS
• Step Resolution: 1 ~ 1/256
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 4.75V ~ 5.25V
• Voltage - Load: 4.5V ~ 18V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 28-VFQFN Exposed Pad
• Supplier Device Package: 28-VQFN (6x6)

pacchetto: 28-VFQFN Exposed Pad

TK4R4P06PL-RQ

Toshiba Semiconductor and Storage

MOSFET N-CHANNEL 60V 58A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

TC74LCX14FT-EL

Toshiba Semiconductor and Storage

IC INVERTER HEX SCHMITT 14-TSSOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 1.65V ~ 3.6V
• Current - Quiescent (Max): 10 µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.3V ~ 0.6V
• Logic Level - High: 1.35V ~ 2.2V
• Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

pacchetto: -

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RN2115-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

pacchetto: -

HN4B102J-TE85L-F

Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR SMV MOQ=30

• Transistor Type: 1 NPN, 1 PNP
• Current - Collector (Ic) (Max): 1.8A, 2A
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 2V
• Power - Max: 750mW
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: -