|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione4.416 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione6.832 |
|
|
|
Toshiba Semiconductor and Storage |
SMALL-SIGNAL NCH MOSFET SOT23F Q
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 69 mOhm @ 2A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
|
pacchetto: SOT-23-3 Flat Leads |
Azione6.304 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.016 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 12V 0.5A USM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
- Power - Max: 100mW
- Frequency - Transition: 130MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
pacchetto: SC-70, SOT-323 |
Azione3.472 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN/PNP 30V 0.5A SMV
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 300mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
pacchetto: SC-74A, SOT-753 |
Azione24.708 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.3W SMV
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
pacchetto: SC-74A, SOT-753 |
Azione6.720 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.3W SM6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
|
pacchetto: SC-74, SOT-457 |
Azione2.816 |
|
|
|
Toshiba Semiconductor and Storage |
IC BUS TRANSCEIVER 8BIT 24SSOP
- Translator Type: Voltage Level
- Channel Type: Bidirectional
- Number of Circuits: 1
- Channels per Circuit: 8
- Voltage - VCCA: 2.7V ~ 3.6V
- Voltage - VCCB: 3V ~ 5.5V
- Input Signal: -
- Output Signal: -
- Output Type: Tri-State, Non-Inverted
- Data Rate: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Features: -
- Mounting Type: Surface Mount
- Package / Case: 24-LSSOP (0.220", 5.60mm Width)
- Supplier Device Package: 24-SSOP
|
pacchetto: 24-LSSOP (0.220", 5.60mm Width) |
Azione7.344 |
|
|
|
Toshiba Semiconductor and Storage |
SUPPLY BUS BUFFER UNI UF6
- Translator Type: Voltage Level
- Channel Type: Unidirectional
- Number of Circuits: 1
- Channels per Circuit: 1
- Voltage - VCCA: 1.1V ~ 2.7V
- Voltage - VCCB: 1.65V ~ 3.6V
- Input Signal: -
- Output Signal: -
- Output Type: Tri-State, Non-Inverted
- Data Rate: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Features: -
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
|
pacchetto: 6-SMD, Flat Leads |
Azione2.096 |
|
|
|
Toshiba Semiconductor and Storage |
IC GATE OR 1CH 2-INP SMV
- Logic Type: OR Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
- Package / Case: SC-74A, SOT-753
|
pacchetto: SC-74A, SOT-753 |
Azione7.344 |
|
|
|
Toshiba Semiconductor and Storage |
IC SCHMITT INVERTER C2MOS SSOP8
- Logic Type: Inverter
- Number of Circuits: 3
- Number of Inputs: 3
- Features: Schmitt Trigger
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.3 V ~ 1.5 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SSOP-P
- Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
|
pacchetto: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) |
Azione144.306 |
|
|
|
Toshiba Semiconductor and Storage |
IC BUFF NON-INVERT 5.5V ESV
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
|
pacchetto: SOT-553 |
Azione6.416 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISOLATR 5KV TRANSISTOR 4-SMD
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: 4-SMD
|
pacchetto: 4-SMD, Gull Wing |
Azione2.898 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 50% @ 500µA
- Current Transfer Ratio (Max): 600% @ 500µA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
|
pacchetto: 16-SOIC (0.179", 4.55mm Width) |
Azione2.898 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISO 3.75KV PSH PULL SO6-5
- Number of Channels: 1
- Inputs - Side 1/Side 2: 1/0
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 20kV/µs
- Input Type: DC
- Output Type: Push-Pull, Totem Pole
- Current - Output / Channel: 10mA
- Data Rate: 15MBd
- Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
- Rise / Fall Time (Typ): 3ns, 3ns
- Voltage - Forward (Vf) (Typ): 1.5V
- Current - DC Forward (If) (Max): 10mA
- Voltage - Supply: 2.7 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
- Supplier Device Package: 6-SO, 5 Lead
|
pacchetto: 6-SOIC (0.179", 4.55mm Width) 5 Leads |
Azione14.280 |
|
|
|
Toshiba Semiconductor and Storage |
IC TXRX NON-INVERT 5.5V 20TSSOP
- Logic Type: Transceiver, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: 3-State
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
|
pacchetto: 20-TSSOP (0.173", 4.40mm Width) |
Azione17.952 |
|
|
|
Toshiba Semiconductor and Storage |
X34 GENERAL-PURPOSE BUS SWITCH L
- Type: Bus Switch
- Circuit: 4 x 1:1
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Dual Supply
- Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 14-VFSOP (0.118", 3.00mm Width)
- Supplier Device Package: 14-VSSOP
|
pacchetto: 14-VFSOP (0.118", 3.00mm Width) |
Azione18.630 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 79 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 320 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
pacchetto: - |
Azione8.994 |
|
|
|
Toshiba Semiconductor and Storage |
40V U-MOS IX-H L-TOGL 1.0MOHM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: L-TOGL™
- Package / Case: 8-PowerBSFN
|
pacchetto: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
pacchetto: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
UMOS10 TO-220AB 80V 7MOHM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
pacchetto: - |
Azione360 |
|
|
|
Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
|
pacchetto: - |
Azione15.285 |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F RADIO-FREQUENCY SIGE HE
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4V
- Frequency - Transition: 26.5GHz
- Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
- Gain: 16.9dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: USQ
|
pacchetto: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 8-SOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
|
pacchetto: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
600V; IPD; 2A; HSSOP31
- Motor Type - Stepper: Multiphase
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (3)
- Interface: PWM
- Technology: IGBT
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 3A
- Voltage - Supply: 13.5V
- Voltage - Load: 13.5V ~ 450V
- Operating Temperature: -40°C ~ 135°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 42-SOP (0.330", 8.40mm Width), 31 Leads, Exposed Pad
- Supplier Device Package: 31-HSSOP
|
pacchetto: - |
Azione6.000 |
|
|
|
Toshiba Semiconductor and Storage |
IC COUNTER BIN 12STAGE 16-TSSOP
- Logic Type: Binary Counter
- Direction: Up
- Number of Elements: 1
- Number of Bits per Element: 12
- Reset: Asynchronous
- Timing: -
- Count Rate: 210 MHz
- Trigger Type: Negative Edge
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
|
pacchetto: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
PNP + NPN BRT Q1BSR22KOHM Q1BER4
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
pacchetto: - |
Azione9.000 |
|