Prodotti Toshiba Semiconductor and Storage

GT8G133(TE12L,Q)

Toshiba Semiconductor and Storage

IGBT 400V 600MW 8TSSOP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
• Power - Max: 600mW
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 1.7µs/2µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

2SK2962,T6F(J

Toshiba Semiconductor and Storage

MOSFET N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-92MOD
• Package / Case: TO-226-3, TO-92-3 Long Body

pacchetto: TO-226-3, TO-92-3 Long Body

SSM3K316T(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A TSM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 53 mOhm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSM
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

TK7A55D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 7A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

TJ15P04M3,RQ(S

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 15A DPAK-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 29W (Tc)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 7.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

TPH1R403NL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 60A 8-SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 64W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

SSM6K513NU,LF

Toshiba Semiconductor and Storage

MOSFET NCH 30V 15A UDFNB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 4A, 10V
• Operating Temperature: 150°C (TA)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-UDFNB (2x2)
• Package / Case: 6-WDFN Exposed Pad

pacchetto: 6-WDFN Exposed Pad

JDV2S10FS(TPL3)

Toshiba Semiconductor and Storage

DIODE STANDARD 10V FSC

• Diode Type: Standard - Single
• Voltage - Peak Reverse (Max): 10V
• Current - Max: -
• Capacitance @ Vr, F: 3.4pF @ 2.5V, 1MHz
• Resistance @ If, F: -
• Power Dissipation (Max): -
• Operating Temperature: 150°C (TJ)
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: fSC

pacchetto: 2-SMD, Flat Lead

CLS03(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Capacitance @ Vr, F: 345pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: L-FLAT?
• Supplier Device Package: L-FLAT? (4x5.5)
• Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: L-FLAT?

TCR3DF33,LM

Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 300MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 65µA ~ 78µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

pacchetto: SC-74A, SOT-753

TB62209FG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 36HSOP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: DMOS
• Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
• Applications: General Purpose
• Current - Output: 1.5A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 13 V ~ 34 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.346", 8.80mm) + 2 Heat Tabs
• Supplier Device Package: 36-HSOP

pacchetto: 36-BSSOP (0.346", 8.80mm) + 2 Heat Tabs

TB6642FG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16HSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel, PWM
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1.5A
• Voltage - Supply: 10 V ~ 45 V
• Voltage - Load: 10 V ~ 45 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
• Supplier Device Package: 16-HSOP

pacchetto: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs

TC58NVG2S0HBAI4

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 63TFBGA

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-TFBGA (9x11)

pacchetto: 63-VFBGA

TC74VHC86FTELM

Toshiba Semiconductor and Storage

IC GATE XOR 4CH 2-INP 14-TSSOP

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5V
• Logic Level - High: 1.5V
• Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

pacchetto: 14-TSSOP (0.173", 4.40mm Width)

TC74LCX00FN(F,M)

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14-SOL

• Logic Type: NAND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 3.6 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOL
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

pacchetto: 14-SOIC (0.154", 3.90mm Width)

TC74LCX14FK(EL,K)

Toshiba Semiconductor and Storage

IC INVERTER HEX SCHMITT 14VSSOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: Schmitt Trigger
• Voltage - Supply: 1.65 V ~ 3.6 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.3 V ~ 0.6 V
• Logic Level - High: 1.35 V ~ 2.2 V
• Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-VSSOP, US14
• Package / Case: 14-VFSOP (0.118", 3.00mm Width)

pacchetto: 14-VFSOP (0.118", 3.00mm Width)

TC7WU04FK,LF

Toshiba Semiconductor and Storage

IC INVERTER TRPL 74HCU04 8-SSOP

• Logic Type: Inverter
• Number of Circuits: 3
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.3 V ~ 1.2 V
• Logic Level - High: 1.7 V ~ 4.8 V
• Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: US8
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

pacchetto: 8-VFSOP (0.091", 2.30mm Width)

TC7S14F,LF

Toshiba Semiconductor and Storage

IC INVERTER SCHMITT 5-SSOP

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 2.6mA, 2.6mA
• Logic Level - Low: 0.3 V ~ 1.5 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

pacchetto: SC-74A, SOT-753

TC7W74FU,LF

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 8SSOP

• Function: Set(Preset) and Reset
• Type: D-Type
• Output Type: Differential
• Number of Elements: 1
• Number of Bits per Element: 1
• Clock Frequency: 67MHz
• Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Iq): 2µA
• Input Capacitance: 5pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

pacchetto: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

DF5G7M2N,LF

Toshiba Semiconductor and Storage

TVS DIODE 5.5VWM 20VC 5DFN

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 20V
• Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
• Power - Peak Pulse: 50W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 0.2pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 5-XFDFN
• Supplier Device Package: 5-DFN (1.3x0.8)

pacchetto: 5-XFDFN

DF3A3.6FU(TE85L,F)

Toshiba Semiconductor and Storage

TVS DIODE 1VWM USM

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 1V
• Voltage - Breakdown (Min): 3.4V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 110pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

pacchetto: SC-70, SOT-323

TLP3214(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY 40V 250MA 4SSOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 3 Ohm
• Load Current: 250mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 40 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.165", 4.20mm)
• Supplier Device Package: 4-SSOP
• Relay Type: Relay

pacchetto: 4-SMD (0.165", 4.20mm)

TLP2303(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 500% @ 5mA
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): -
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 18V
• Current - Output / Channel: 80mA
• Voltage - Forward (Vf) (Typ): -
• Current - DC Forward (If) (Max): 20mA
• Vce Saturation (Max): -
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
• Supplier Device Package: 6-SO, 5 Lead

pacchetto: 6-SOIC (0.179", 4.55mm Width) 5 Leads

TLP2310(TPL,E

Toshiba Semiconductor and Storage

HIGH SPEED LOGIC OUTPUT OPTOCOUP

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 25kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 10mA
• Data Rate: 5Mbps
• Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
• Rise / Fall Time (Typ): 11ns, 13ns
• Voltage - Forward (Vf) (Typ): 1.53V
• Current - DC Forward (If) (Max): 8mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

TCK420G-L3F

Toshiba Semiconductor and Storage

LOAD SWITCH (GATE DRIVER) IC WCS

• Driven Configuration: High-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 2.7V ~ 28V
• Logic Voltage - VIL, VIH: 0.4V, 1.2V
• Current - Peak Output (Source, Sink): -
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XFBGA, WLCSP
• Supplier Device Package: 6-WCSPG (0.8x1.2)

pacchetto: -

RN2307-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

pacchetto: -

SSM3K36TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA UFM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Leads

pacchetto: -

RN4909FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47kOhms
• Resistor - Emitter Base (R2) (Ohms): 22kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

pacchetto: -