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Toshiba Semiconductor and Storage |
MOSFET P-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220NIS
- Package / Case: TO-220-3 Full Pack
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pacchetto: TO-220-3 Full Pack |
Azione2.048 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione22.800 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 150A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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pacchetto: 8-PowerVDFN |
Azione3.568 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.3W SM6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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pacchetto: SC-74, SOT-457 |
Azione4.800 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 80MA SC74
- Diode Configuration: 3 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 80mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SC-74
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pacchetto: SC-74, SOT-457 |
Azione3.488 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 15MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 15mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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pacchetto: TO-226-3, TO-92-3 Long Body |
Azione7.984 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 3.3V 200MA 4-SDFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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pacchetto: 4-XFDFN Exposed Pad |
Azione3.936 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 1.1V 500MA 5DFNB
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.1V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 55µA ~ 68µA
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN Exposed Pad
- Supplier Device Package: 5-DFNB (1.2x1.2)
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pacchetto: 4-XDFN Exposed Pad |
Azione39.720 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 1CH 2-INP USV
- Logic Type: NAND Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
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pacchetto: 5-TSSOP, SC-70-5, SOT-353 |
Azione44.454 |
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Toshiba Semiconductor and Storage |
IC GATE AND 1CH 2-INP
- Logic Type: AND Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: Open Drain
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: -, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
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pacchetto: 5-TSSOP, SC-70-5, SOT-353 |
Azione22.320 |
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Toshiba Semiconductor and Storage |
IC MUX/DEMUX 8X1 TSSOP
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 160 Ohm
- Channel-to-Channel Matching (ΔRon): 4 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 18 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): -
- -3db Bandwidth: 20MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
- Current - Leakage (IS(off)) (Max): 100nA
- Crosstalk: -50dB @ 1.5MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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pacchetto: 16-TSSOP (0.173", 4.40mm Width) |
Azione22.536 |
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Toshiba Semiconductor and Storage |
TVS DIODE 3.5VWM CST3
- Type: Zener
- Unidirectional Channels: 2
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 3.5V
- Voltage - Breakdown (Min): 5.3V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 8pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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pacchetto: SC-70, SOT-323 |
Azione153.876 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV DARL 6-SO, 4 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 1000% @ 1mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 50µs, 15µs
- Rise / Fall Time (Typ): 40µs, 15µs
- Input Type: DC
- Output Type: Darlington
- Voltage - Output (Max): 300V
- Current - Output / Channel: 150mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 1.2V
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (4 Leads), Gull Wing
- Supplier Device Package: 6-SO, 4 Lead
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pacchetto: 6-SMD (4 Leads), Gull Wing |
Azione8.028 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS 4-SO
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 200% @ 5mA
- Current Transfer Ratio (Max): 400% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 4-SOIC (0.179", 4.55mm)
- Supplier Device Package: 4-SO
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pacchetto: 4-SOIC (0.179", 4.55mm) |
Azione6.624 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 50% @ 500µA
- Current Transfer Ratio (Max): 600% @ 500µA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
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pacchetto: 16-SOIC (0.179", 4.55mm Width) |
Azione17.334 |
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Toshiba Semiconductor and Storage |
OPTOISO 2.5KV TRANS W/BASE 8DIP
- Number of Channels: 1
- Voltage - Isolation: 2500Vrms
- Current Transfer Ratio (Min): 19% @ 16mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 200ns, 500ns
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor with Base
- Voltage - Output (Max): 15V
- Current - Output / Channel: 8mA
- Voltage - Forward (Vf) (Typ): 1.65V
- Current - DC Forward (If) (Max): 25mA
- Vce Saturation (Max): -
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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pacchetto: 8-DIP (0.300", 7.62mm) |
Azione23.802 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV OPEN COLL SO6
- Number of Channels: 1
- Inputs - Side 1/Side 2: 1/0
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 15kV/µs
- Input Type: DC
- Output Type: Open Collector
- Current - Output / Channel: 8mA
- Data Rate: 1Mbps
- Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
- Rise / Fall Time (Typ): -
- Voltage - Forward (Vf) (Typ): 1.61V
- Current - DC Forward (If) (Max): 25mA
- Voltage - Supply: 4.5 V ~ 30 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
- Supplier Device Package: 6-SO, 5 Lead
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pacchetto: 6-SOIC (0.179", 4.55mm Width) 5 Leads |
Azione6.852 |
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Toshiba Semiconductor and Storage |
X34 PB-F 3-TO-8 LINE DECODER DEC
- Type: Decoder/Demultiplexer
- Circuit: 1 x 3:8
- Independent Circuits: 1
- Current - Output High, Low: 24mA, 24mA
- Voltage Supply Source: Single Supply
- Voltage - Supply: 1.65V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOPB
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pacchetto: 16-TSSOP (0.173", 4.40mm Width) |
Azione21.384 |
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Toshiba Semiconductor and Storage |
PB-F IPD IC HSSOP31 VBB(V)=600V
- Motor Type - Stepper: Multiphase
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: High Side
- Interface: PWM
- Technology: IGBT
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 700mA
- Voltage - Supply: 13.5V ~ 17.5V
- Voltage - Load: 50V ~ 450V
- Operating Temperature: -40°C ~ 135°C
- Mounting Type: Surface Mount
- Package / Case: 62-SOP (0.331", 8.40mm Width) Exposed Pad, 31 Leads
- Supplier Device Package: P-HSSOP31-0918-0.80-002
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pacchetto: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247 48MOH
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 132W (Tc)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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pacchetto: - |
Azione108 |
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Toshiba Semiconductor and Storage |
L-MOS LVP IC VCC: 2.3V-3.6V, SOT
- Logic Type: OR Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2.3V ~ 3.6V
- Current - Quiescent (Max): 1 µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.35V ~ 0.5V
- Logic Level - High: 1.1V ~ 1.2V
- Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: fSV
- Package / Case: SOT-953
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pacchetto: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
IC GATE NAND 1CH 2-INP USV
- Logic Type: NAND Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 0.9V ~ 3.6V
- Current - Quiescent (Max): 1 µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.7V ~ 0.8V
- Logic Level - High: 1.7V ~ 2V
- Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
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pacchetto: - |
Azione17.277 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A USM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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pacchetto: - |
Azione9.000 |
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Toshiba Semiconductor and Storage |
40V 150MA LDO LOW IQ 1UA SOT-25
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 36V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.76V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): 1.6 µA
- Current - Supply (Max): -
- PSRR: 60dB (1kHz)
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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pacchetto: - |
Azione6.819 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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pacchetto: - |
Azione6.000 |
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Toshiba Semiconductor and Storage |
CMOS LINEAR IC OVER TEMP DETECTI
- Type: Thermal
- Number of Voltages Monitored: 1
- Output: Push-Pull, Totem Pole
- Reset: -
- Reset Timeout: 17µs Typical
- Voltage - Threshold: 0.5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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pacchetto: - |
Azione24.000 |
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Toshiba Semiconductor and Storage |
IC BRIDGE 80VFBGA
- Type: Bridge
- Applications: -
- Mounting Type: Surface Mount
- Package / Case: 80-VFBGA
- Supplier Device Package: 80-VFBGA (7x7)
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pacchetto: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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pacchetto: - |
Azione2.694 |
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