Pagina 9 - Prodotti STMicroelectronics - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti STMicroelectronics - Transistor - FET, MOSFET - Singoli

Record 2.492
Pagina  9/89
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STD12N60DM2AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
10A (Tc)
0V, 10V
5V @ 250µA
14.5 nC @ 10 V
614 pF @ 100 V
±25V
-
110W (Tc)
430mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
STL260N4LF7
STMicroelectronics

N-CHANNEL 40 V, 0.00085 OHM TYP.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione8.241
MOSFET (Metal Oxide)
40 V
120A (Tc)
4.5V, 10V
2.5V @ 250µA
42 nC @ 4.5 V
6000 pF @ 25 V
±20V
-
188W (Tc)
1.1mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
SCT1000N170
STMicroelectronics

HIP247 IN LINE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™
  • Package / Case: TO-247-3
pacchetto: -
Azione1.707
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
3.5V @ 1mA
13.3 nC @ 20 V
133 pF @ 1000 V
+22V, -10V
-
96W (Tc)
1.3Ohm @ 3A, 20V
-55°C ~ 200°C (TJ)
Through Hole
HiP247™
TO-247-3
STLD126N4F6AG
STMicroelectronics

DISCRETE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STO36N60M6
STMicroelectronics

N-channel 600 V, 85 mOhm typ.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL (HV)
  • Package / Case: 8-PowerSFN
pacchetto: -
Azione2.838
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
4.75V @ 250µA
44.3 nC @ 10 V
1960 pF @ 100 V
±25V
-
230W (Tc)
99mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TOLL (HV)
8-PowerSFN
SCTWA35N65G2V-4
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
  • Vgs (Max): +18V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
45A (Tc)
18V, 20V
5V @ 1mA
73 nC @ 20 V
1370 pF @ 400 V
+18V, -5V
-
240W (Tc)
67mOhm @ 20A, 20V
-55°C ~ 200°C (TJ)
Through Hole
TO-247-4
TO-247-4
SCTWA35N65G2VAG
STMicroelectronics

SICFET N-CH 650V 45A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
SiCFET (Silicon Carbide)
650 V
45A (Tc)
18V, 20V
3.2V @ 1mA
73 nC @ 20 V
1370 pF @ 400 V
+20V, -5V
-
208W (Tc)
72mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STU7N60DM2
STMicroelectronics

MOSFET N-CH 600V 6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
6A (Tc)
10V
4.75V @ 250µA
7.5 nC @ 10 V
324 pF @ 100 V
±25V
-
60W (Tc)
900mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPak, TO-251AA
STFH10N60M6
STMicroelectronics

MOSFET N-CH 600V 6.4A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
6.4A (Tc)
10V
4.75V @ 250µA
8.8 nC @ 10 V
338 pF @ 100 V
±25V
-
20W (Tc)
600mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STD14NM50NAG
STMicroelectronics

MOSFET N-CH 500V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W
  • Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione6.945
MOSFET (Metal Oxide)
500 V
12A (Tc)
10V
4V @ 250µA
27 nC @ 10 V
816 pF @ 50 V
±25V
-
90W
320mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCTW90N65G2V
STMicroelectronics

SICFET N-CH 650V 90A HIP247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 400 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™
  • Package / Case: TO-247-3
pacchetto: -
Azione6
SiCFET (Silicon Carbide)
650 V
90A (Tc)
18V
5V @ 250µA
157 nC @ 18 V
3300 pF @ 400 V
+22V, -10V
-
390W (Tc)
25mOhm @ 50A, 18V
-55°C ~ 200°C (TJ)
Through Hole
HiP247™
TO-247-3
STD22NF06AG
STMicroelectronics

MOSFET N-CH 60V 23A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
60 V
24A (Tc)
10V
4V @ 250µA
31 nC @ 10 V
690 pF @ 25 V
±20V
-
60W (Tc)
40mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
STB45N30M5
STMicroelectronics

NCHANNEL 300 V 0.037 OHM TYP. 53

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 26.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
300 V
53A (Tc)
10V
5V @ 250µA
95 nC @ 10 V
4240 pF @ 100 V
±25V
-
250W (Tc)
40mOhm @ 26.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT015W120G3-4AG
STMicroelectronics

TO247-4

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3512 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 673W (Tc)
  • Rds On (Max) @ Id, Vgs: 17.5mOhm @ 60A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
pacchetto: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
1200 V
129A (Tc)
15V, 18V
4.2V @ 10mA
167 nC @ 18 V
3512 pF @ 800 V
+22V, -10V
-
673W (Tc)
17.5mOhm @ 60A, 18V
-55°C ~ 200°C (TJ)
Through Hole
TO-247-4
TO-247-4
STW68N65DM6
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3528 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 431W (Tc)
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
55A (Tc)
10V
4.75V @ 250µA
80 nC @ 10 V
3528 pF @ 100 V
±25V
-
431W (Tc)
59mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SCTW100N65G2AG
STMicroelectronics

SICFET N-CH 650V 100A HIP247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 420W (Tc)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
SiCFET (Silicon Carbide)
650 V
100A (Tc)
18V
5V @ 5mA
162 nC @ 18 V
3315 pF @ 520 V
+22V, -10V
-
420W (Tc)
26mOhm @ 50A, 18V
-55°C ~ 200°C (TJ)
Through Hole
HiP247™
TO-247-3
STB24N60M6
STMicroelectronics

MOSFET N-CH 600V D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione2.100
MOSFET (Metal Oxide)
600 V
17A (Tc)
10V
4.75V @ 250µA
23 nC @ 10 V
960 pF @ 100 V
±25V
-
130W (Tc)
190mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STD80N450K6
STMicroelectronics

N-CHANNEL 800 V, 380 MOHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.464
MOSFET (Metal Oxide)
800 V
10A (Tc)
10V
4V @ 100µA
17.3 nC @ 10 V
700 pF @ 400 V
±30V
-
83W (Tc)
450mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCTWA90N65G2V-4
STMicroelectronics

TRANS SJT N-CH 650V 119A HIP247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 565W (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™ Long Leads
  • Package / Case: TO-247-3
pacchetto: -
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SiCFET (Silicon Carbide)
650 V
119A (Tc)
-
5V @ 1mA
157 nC @ 18 V
3380 pF @ 400 V
+22V, -10V
-
565W (Tc)
24mOhm @ 50A, 18V
-55°C ~ 200°C (TJ)
Through Hole
HiP247™ Long Leads
TO-247-3
STWA60N099DM9AG
STMicroelectronics

MOSFET N-CH 600V 29A TO247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
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-
-
-
-
-
-
-
-
-
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-
-
STH12N120K5-2AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 1200

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
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MOSFET (Metal Oxide)
1200 V
12A (Tc)
10V
5V @ 100µA
44.2 nC @ 10 V
1370 pF @ 100 V
±30V
-
250W (Tc)
690mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
H2PAK-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STHU32N65DM6AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2211 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Rds On (Max) @ Id, Vgs: 97mOhm @ 18.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: HU3PAK
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Azione147
MOSFET (Metal Oxide)
650 V
37A (Tc)
10V
4.75V @ 250µA
52.6 nC @ 10 V
2211 pF @ 100 V
±25V
-
320W (Tc)
97mOhm @ 18.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
HU3PAK
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
STB47N50DM6AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 500 V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 71mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione3.000
MOSFET (Metal Oxide)
500 V
38A (Tc)
10V
5V @ 250µA
57 nC @ 10 V
2300 pF @ 100 V
±25V
-
250W (Tc)
71mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STL64N4F7AG
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerFlat™ (5x6)
  • Package / Case: 8-PowerVDFN
pacchetto: -
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MOSFET (Metal Oxide)
40 V
64A (Tc)
10V
4V @ 250µA
9.8 nC @ 10 V
637 pF @ 25 V
±20V
-
65W (Tc)
8.5mOhm @ 32A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerFlat™ (5x6)
8-PowerVDFN
SCT018W65G3-4AG
STMicroelectronics

TO247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2077 pF @ 400 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 398W (Tc)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 30A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
pacchetto: -
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MOSFET (Metal Oxide)
650 V
55A (Tc)
15V, 18V
4.2V @ 5mA
77 nC @ 18 V
2077 pF @ 400 V
+22V, -10V
-
398W (Tc)
27mOhm @ 30A, 18V
-55°C ~ 200°C (TJ)
Through Hole
TO-247-4
TO-247-4
STF26N60DM6
STMicroelectronics

MOSFET N-CH 600V 18A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione2.997
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
4.75V @ 250µA
24 nC @ 10 V
940 pF @ 100 V
±25V
-
30W (Tc)
195mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STO33N60M6
STMicroelectronics

MOSFET N-CH 600V 25A TOLL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL (HV)
  • Package / Case: 8-PowerSFN
pacchetto: -
Azione234
MOSFET (Metal Oxide)
600 V
25A (Tc)
10V
4.75V @ 250µA
33.4 nC @ 10 V
1515 pF @ 100 V
±25V
-
230W (Tc)
125mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TOLL (HV)
8-PowerSFN
STB41N40DM6AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 400 V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 20.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
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MOSFET (Metal Oxide)
400 V
41A (Tc)
10V
5V @ 250µA
53 nC @ 10 V
2310 pF @ 100 V
±25V
-
250W (Tc)
65mOhm @ 20.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB