Pagina 8 - Prodotti STMicroelectronics - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti STMicroelectronics - Transistor - FET, MOSFET - Singoli

Record 2.492
Pagina  8/89
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STW63N65DM2
STMicroelectronics

MOSFET N-CH 650V 65A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
60A (Tc)
10V
5V @ 250µA
120 nC @ 10 V
5500 pF @ 100 V
±25V
-
446W (Tc)
50mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STH10N80K5-2AG
STMicroelectronics

MOSFET N-CH 800V 8A H2PAK-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 121W (Tc)
  • Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2Pak-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione2.970
MOSFET (Metal Oxide)
800 V
8A (Tc)
10V
5V @ 100µA
17.3 nC @ 10 V
426 pF @ 100 V
±30V
-
121W (Tc)
680mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
H2Pak-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STWA35N65DM2
STMicroelectronics

PTD HIGH VOLTAGE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
32A (Tc)
-
-
-
-
±25V
-
-
-
-
-
-
-
STL120N10F8
STMicroelectronics

N-CHANNEL ENHANCEMENT MODE STAND

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione810
MOSFET (Metal Oxide)
100 V
125A (Tc)
10V
4V @ 250µA
56 nC @ 10 V
3600 pF @ 50 V
±20V
-
150W (Tc)
4.6mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
STW8N120K5
STMicroelectronics

MOSFET N-CH 1200V 6A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: -
Azione49.083
MOSFET (Metal Oxide)
1200 V
6A (Tc)
10V
5V @ 100µA
13.7 nC @ 10 V
505 pF @ 100 V
±30V
-
130W (Tc)
2Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STFH12N105K5
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1050 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
1050 V
8A (Tc)
10V
5V @ 100µA
18.4 nC @ 10 V
559 pF @ 100 V
±30V
-
29W (Tc)
1Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STL22N60M6
STMicroelectronics

MOSFET N-CH 600V 10A PWRFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6) HV
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
4.75V @ 250µA
20 nC @ 10 V
800 pF @ 100 V
±25V
-
57W (Tc)
250mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (5x6) HV
8-PowerVDFN
STP33N60M6
STMicroelectronics

MOSFET N-CH 600V 25A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
25A (Tc)
10V
4.75V @ 250µA
33.4 nC @ 10 V
1515 pF @ 100 V
±25V
-
190W (Tc)
125mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
SCTWA35N65G2V
STMicroelectronics

TRANS SJT N-CH 650V 45A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 400 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
SiCFET (Silicon Carbide)
650 V
45A (Tc)
18V, 20V
3.2V @ 1mA
73 nC @ 20 V
73000 pF @ 400 V
+20V, -5V
-
208W (Tc)
72mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STWA30N65DM6AG
STMicroelectronics

MOSFET N-CH 650V 28A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 284W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: -
Azione2.070
MOSFET (Metal Oxide)
650 V
28A (Tc)
10V
4.75V @ 250µA
46 nC @ 10 V
2000 pF @ 100 V
±25V
-
284W (Tc)
110mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STWA65N60DM6
STMicroelectronics

MOSFET N-CH 600V 38A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: -
Azione105
MOSFET (Metal Oxide)
600 V
38A (Tc)
-
-
-
-
±25V
-
-
-
-
Through Hole
TO-247 Long Leads
TO-247-3
STW74NF30
STMicroelectronics

MOSFET N-CH 300V 60A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5930 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
300 V
60A (Tc)
10V
4V @ 250µA
164 nC @ 10 V
5930 pF @ 25 V
±20V
-
320W (Tc)
45mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STF26N65DM2
STMicroelectronics

MOSFET N-CH 650V 20A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5V @ 250µA
35.5 nC @ 10 V
1480 pF @ 100 V
±25V
-
30W (Tc)
190mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STFU11N65M2
STMicroelectronics

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STWA68N65DM6AG
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
72A (Tc)
10V
4.75V @ 250µA
118 nC @ 10 V
5900 pF @ 100 V
±25V
-
480W (Tc)
39mOhm @ 36A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STD80N240K6
STMicroelectronics

N-CHANNEL 800 V, 197 MOHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione12.000
MOSFET (Metal Oxide)
800 V
16A (Tc)
10V
4V @ 100µA
25.9 nC @ 10 V
1350 pF @ 400 V
±30V
-
105W (Tc)
220mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
STP80N70F4
STMicroelectronics

MOSFET N-CH 68V 85A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 68 V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.8mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
68 V
85A (Tc)
10V
4V @ 250µA
90 nC @ 10 V
5600 pF @ 25 V
±20V
-
150W (Tc)
9.8mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
STL22N60DM6
STMicroelectronics

MOSFET N-CH 650V 15A PWRFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 102W (Tc)
  • Rds On (Max) @ Id, Vgs: 265mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
13A (Tc)
10V
4.75V @ 250µA
20.6 nC @ 10 V
800 pF @ 100 V
±25V
-
102W (Tc)
265mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
STL170N4LF8
STMicroelectronics

POWER FLAT 8L 6X5X1 P1.27

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STFU14N80K5
STMicroelectronics

MOSFET N-CH 800V 12A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
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MOSFET (Metal Oxide)
800 V
12A (Tc)
10V
5V @ 100µA
22 nC @ 10 V
620 pF @ 100 V
±30V
-
30W (Tc)
445mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
SCTWA40N120G2V-4
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V
  • Vgs (Max): +18V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 277W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
pacchetto: -
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MOSFET (Metal Oxide)
1200 V
36A (Tc)
18V
4.9V @ 1mA
61 nC @ 18 V
1233 pF @ 800 V
+18V, -5V
-
277W (Tc)
100mOhm @ 20A, 18V
-55°C ~ 200°C (TJ)
Through Hole
TO-247-4
TO-247-4
STWA75N60DM6
STMicroelectronics

MOSFET N-CH 600V 72A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
pacchetto: -
Azione1.083
MOSFET (Metal Oxide)
600 V
72A (Tc)
-
-
-
-
±25V
-
-
-
-
Through Hole
TO-247 Long Leads
TO-247-3
STL17N60M6
STMicroelectronics

MOSFET N-CH 600V 10A PWRFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
pacchetto: -
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MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
4.75V @ 250µA
16.7 nC @ 10 V
575 pF @ 100 V
±25V
-
90W (Tc)
350mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
STL195N4F7AG
STMicroelectronics

DISCRETE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STH13N120K5-2AG
STMicroelectronics

MOSFET N-CH 1200V 12A H2PAK-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione11.250
MOSFET (Metal Oxide)
1200 V
12A (Tc)
10V
5V @ 100µA
44.2 nC @ 10 V
1370 pF @ 100 V
±30V
-
250W (Tc)
690mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
H2PAK-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT040W120G3AG
STMicroelectronics

HIP-247 IN LINE HEAT SINK 2MM

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 312W (Tc)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™
  • Package / Case: TO-247-3
pacchetto: -
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SiC (Silicon Carbide Junction Transistor)
1200 V
40A (Tc)
15V, 18V
4.2V @ 5mA
56 nC @ 18 V
1329 pF @ 800 V
+22V, -10V
-
312W (Tc)
54mOhm @ 16A, 18V
-55°C ~ 200°C (TJ)
Through Hole
HiP247™
TO-247-3
STD70R1K3S
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: -
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MOSFET (Metal Oxide)
700 V
5A (Tc)
10V
3.75V @ 250µA
4.1 nC @ 10 V
175 pF @ 100 V
±25V
-
77W (Tc)
1.4Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPak, TO-251AA
STD6N60DM2
STMicroelectronics

MOSFET N-CH 600V 5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
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MOSFET (Metal Oxide)
600 V
5A (Tc)
10V
4.75V @ 250µA
6.2 nC @ 10 V
274 pF @ 100 V
±25V
-
60W (Tc)
1.1Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63