Name: SCTW100N65G2AG
Brand: STMicroelectronics
SKU: SCTW100N65G2AG
Availability: InStock
Rating: 5 (160 reviews)

SCTW100N65G2AG

Per Riferimento Soltanto

Numero di parte	SCTW100N65G2AG
Produttore	STMicroelectronics
Descrizione	SICFET N-CH 650V 100A HIP247
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 2 - dic 7 (Scegli una spedizione rapida)
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Stiamo offrendo SCTW100N65G2AG per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche SCTW100N65G2AG

Produttore	STMicroelectronics
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Corrente - Scarico continuo (Id) @ 25 ° C	100A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	18V
Vgs (th) (Max) @ Id	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	162 nC @ 18 V
Capacità di ingresso (Ciss) (Max) @ Vds	3315 pF @ 520 V
Vgs (massimo)	+22V, -10V
Caratteristica FET	-
Dissipazione di potenza (max)	420W (Tc)
Rds On (Max) @ Id, Vgs	26mOhm @ 50A, 18V
temperatura di esercizio	-55°C ~ 200°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	HiP247™
Pacchetto / caso	TO-247-3

SCTW100N65G2AG Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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(3)The PartNo is unused and only in the original unpacked packaging.

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