Pagina 67 - Prodotti ON Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti ON Semiconductor - Transistor - FET, MOSFET - Singoli

Record 2.260
Pagina  67/81
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
NTD4860NA-35G
ON Semiconductor

MOSFET N-CH 25V 65A IPAK TRIMMED

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione2.672
MOSFET (Metal Oxide)
25V
10.4A (Ta), 65A (Tc)
-
2.5V @ 250µA
21.8nC @ 10V
1308pF @ 12V
-
-
1.28W (Ta), 50W (Tc)
7.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD4860NA-1G
ON Semiconductor

MOSFET N-CH 25V 65A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione372.600
MOSFET (Metal Oxide)
25V
10.4A (Ta), 65A (Tc)
-
2.5V @ 250µA
21.8nC @ 10V
1308pF @ 12V
-
-
1.28W (Ta), 50W (Tc)
7.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTB6413ANG
ON Semiconductor

MOSFET N-CH 100V 42A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione12.852
MOSFET (Metal Oxide)
100V
42A (Tc)
10V
4V @ 250µA
51nC @ 10V
1800pF @ 25V
±20V
-
136W (Tc)
28 mOhm @ 42A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB6412ANG
ON Semiconductor

MOSFET N-CH 100V 58A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 18.2 mOhm @ 58A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.664
MOSFET (Metal Oxide)
100V
58A (Tc)
10V
4V @ 250µA
100nC @ 10V
3500pF @ 25V
±20V
-
167W (Tc)
18.2 mOhm @ 58A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB6411ANG
ON Semiconductor

MOSFET N-CH 100V 72A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 217W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 72A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.944
MOSFET (Metal Oxide)
100V
77A (Tc)
10V
4V @ 250µA
100nC @ 10V
3700pF @ 25V
±20V
-
217W (Tc)
14 mOhm @ 72A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NDD05N50Z-1G
ON Semiconductor

MOSFET N-CH 500V 5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione6.900
MOSFET (Metal Oxide)
500V
4.7A (Tc)
10V
4.5V @ 50µA
18.5nC @ 10V
530pF @ 25V
±30V
-
83W (Tc)
1.5 Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTD4857NA-1G
ON Semiconductor

MOSFET N-CH 25V 78A SGL IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione4.672
MOSFET (Metal Oxide)
25V
12A (Ta), 78A (Tc)
-
2.5V @ 250µA
32nC @ 10V
1960pF @ 12V
-
-
-
5.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTD4905N-35G
ON Semiconductor

MOSFET N-CH 30V 67A SGL IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione2.912
MOSFET (Metal Oxide)
30V
12A (Ta), 67A (Tc)
4.5V, 10V
2.2V @ 250µA
33nC @ 10V
2340pF @ 15V
±20V
-
1.4W (Ta), 44W (Tc)
4.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD4904N-35G
ON Semiconductor

MOSFET N-CH 30V 79A SGL IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3052pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione36.048
MOSFET (Metal Oxide)
30V
13A (Ta), 79A (Tc)
4.5V, 10V
2.2V @ 250µA
41nC @ 10V
3052pF @ 15V
±20V
-
1.4W (Ta), 52W (Tc)
3.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD4905N-1G
ON Semiconductor

MOSFET N-CH 30V 67A SGL IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione7.792
MOSFET (Metal Oxide)
30V
12A (Ta), 67A (Tc)
4.5V, 10V
2.2V @ 250µA
33nC @ 10V
2340pF @ 15V
±20V
-
1.4W (Ta), 44W (Tc)
4.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTD4906NA-35G
ON Semiconductor

MOSFET N-CH 30V 54A SGL IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione3.600
MOSFET (Metal Oxide)
30V
10.3A (Ta), 54A (Tc)
-
2.2V @ 250µA
24nC @ 10V
1932pF @ 15V
-
-
-
5.5 mOhm @ 30A, 10V
-
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD4909N-1G
ON Semiconductor

MOSFET N-CH 30V 41A SGL IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione6.576
MOSFET (Metal Oxide)
30V
8.8A (Ta), 41A (Tc)
4.5V, 10V
2.2V @ 250µA
17.5nC @ 10V
1314pF @ 15V
±20V
-
1.37W (Ta), 29.4W (Tc)
8 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD4909N-35G
ON Semiconductor

MOSFET N-CH 30V 41A SGL IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione61.212
MOSFET (Metal Oxide)
30V
8.8A (Ta), 41A (Tc)
4.5V, 10V
2.2V @ 250µA
17.5nC @ 10V
1314pF @ 15V
±20V
-
1.37W (Ta), 29.4W (Tc)
8 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD4906N-1G
ON Semiconductor

MOSFET N-CH 30V 54A SGL IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione37.500
MOSFET (Metal Oxide)
30V
10.3A (Ta), 54A (Tc)
4.5V, 10V
2.2V @ 250µA
24nC @ 10V
1932pF @ 15V
±20V
-
1.38W (Ta), 37.5W (Tc)
5.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD4906N-35G
ON Semiconductor

MOSFET N-CH 30V 10.3A SGL IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione34.512
MOSFET (Metal Oxide)
30V
10.3A (Ta), 54A (Tc)
4.5V, 10V
2.2V @ 250µA
24nC @ 10V
1932pF @ 15V
±20V
-
1.38W (Ta), 37.5W (Tc)
5.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD4863NA-35G
ON Semiconductor

MOSFET N-CH 25V 49A SGL IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione6.336
MOSFET (Metal Oxide)
25V
9.2A (Ta), 49A (Tc)
-
2.5V @ 250µA
17.8nC @ 10V
990pF @ 12V
-
-
1.27W (Ta), 36.6W (Tc)
9.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTLUS4195PZTBG
ON Semiconductor

MOSFET P-CH 30V 3A SGL 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (1.6x1.6)
  • Package / Case: 6-PowerUFDFN
pacchetto: 6-PowerUFDFN
Azione6.352
MOSFET (Metal Oxide)
30V
2A (Ta)
4.5V, 10V
3V @ 250µA
5nC @ 4.5V
250pF @ 15V
±20V
-
600mW (Ta)
90 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
NTLUS3192PZTBG
ON Semiconductor

MOSFET P-CH 20V 3.4A SGL 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (1.6x1.6)
  • Package / Case: 6-PowerUFDFN
pacchetto: 6-PowerUFDFN
Azione3.488
MOSFET (Metal Oxide)
20V
2.2A (Ta)
1.5V, 4.5V
1V @ 250µA
8.5nC @ 4.5V
450pF @ 10V
±8V
-
600mW (Ta)
86 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
NTLJS4149PTBG
ON Semiconductor

MOSFET P-CH 30V 4.6A SGL 6WDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
pacchetto: 6-WDFN Exposed Pad
Azione5.456
MOSFET (Metal Oxide)
30V
2.7A (Ta)
2.5V, 4.5V
1V @ 250µA
15nC @ 4.5V
960pF @ 15V
±12V
-
700mW (Ta)
62 mOhm @ 4.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN (2x2)
6-WDFN Exposed Pad
NTLUS3192PZTAG
ON Semiconductor

MOSFET P-CH 20V 3.4A SGL 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (1.6x1.6)
  • Package / Case: 6-PowerUFDFN
pacchetto: 6-PowerUFDFN
Azione2.864
MOSFET (Metal Oxide)
20V
2.2A (Ta)
1.5V, 4.5V
1V @ 250µA
8.5nC @ 4.5V
450pF @ 10V
±8V
-
600mW (Ta)
85 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
NTLUF4189NZTBG
ON Semiconductor

MOSFET N-CH 30V 1.2A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (1.6x1.6)
  • Package / Case: 6-UFDFN Exposed Pad
pacchetto: 6-UFDFN Exposed Pad
Azione5.232
MOSFET (Metal Oxide)
30V
1.2A (Ta)
2.5V, 4.5V
1.5V @ 250µA
3nC @ 4.5V
95pF @ 15V
±8V
Schottky Diode (Isolated)
500mW (Ta)
200 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (1.6x1.6)
6-UFDFN Exposed Pad
NTLUS4195PZTAG
ON Semiconductor

MOSFET P-CH 30V 3A SGL 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (1.6x1.6)
  • Package / Case: 6-PowerUFDFN
pacchetto: 6-PowerUFDFN
Azione4.512
MOSFET (Metal Oxide)
30V
2A (Ta)
4.5V, 10V
3V @ 250µA
5nC @ 4.5V
250pF @ 15V
±20V
-
600mW (Ta)
90 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
NTR4171PT3G
ON Semiconductor

MOSFET P-CH 30V 2.2A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 480mW (Ta)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.840
MOSFET (Metal Oxide)
30V
2.2A (Ta)
2.5V, 10V
1.4V @ 250µA
15.6nC @ 10V
720pF @ 15V
±12V
-
480mW (Ta)
75 mOhm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
NTR4170NT3G
ON Semiconductor

MOSFET N-CH 30V 3.2A SGL SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 480mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.096
MOSFET (Metal Oxide)
30V
-
2.5V, 10V
1.4V @ 250µA
4.76nC @ 4.5V
432pF @ 15V
±12V
-
480mW (Ta)
55 mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
NTMFS4941NT3G
ON Semiconductor

MOSFET N-CH 30V 9A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 910mW (Ta), 25.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione2.528
MOSFET (Metal Oxide)
30V
9A (Ta), 47A (Tc)
4.5V, 10V
2.2V @ 250µA
25.5nC @ 10V
1650pF @ 15V
±20V
-
910mW (Ta), 25.5W (Tc)
6.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4943NT3G
ON Semiconductor

MOSFET N-CH 30V 8.3A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1401pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 910mW (Ta), 22.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione4.112
MOSFET (Metal Oxide)
30V
8.3A (Ta), 41A (Tc)
4.5V, 10V
2.2V @ 250µA
20.9nC @ 10V
1401pF @ 15V
±20V
-
910mW (Ta), 22.3W (Tc)
7.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4945NT3G
ON Semiconductor

MOSFET N-CH 30V 7.4A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 910mW (Ta), 19.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione3.088
MOSFET (Metal Oxide)
30V
7.4A (Ta), 35A (Tc)
4.5V, 10V
2.2V @ 250µA
17.6nC @ 10V
1205pF @ 15V
±20V
-
910mW (Ta), 19.8W (Tc)
9 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4935NBT1G
ON Semiconductor

MOSFET N-CH 30V 13A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 930mW (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione4.416
MOSFET (Metal Oxide)
30V
13A (Ta), 93A (Tc)
4.5V, 10V
2V @ 250µA
49.4nC @ 10V
4850pF @ 15V
±20V
-
930mW (Ta), 48W (Tc)
3.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads