Prodotti ON Semiconductor - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti ON Semiconductor - Transistor - FET, MOSFET - Singoli

Record 2.260
Pagina  1/81
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot NTR5103NT1G
ON Semiconductor

MOSFET N-CH 60V 0.26A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.81nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione384.252
MOSFET (Metal Oxide)
60V
260mA (Ta)
4.5V, 10V
2.6V @ 250µA
0.81nC @ 5V
40pF @ 25V
±30V
-
300mW (Ta)
2.5 Ohm @ 240mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
BBS3002-DL-1E
ON Semiconductor

MOSFET P-CH 60V 100A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione13.668
MOSFET (Metal Oxide)
60V
100A (Ta)
4V, 10V
-
280nC @ 10V
13200pF @ 20V
±20V
-
90W (Tc)
5.8 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVD5117PLT4G-VF01
ON Semiconductor

MOSFET P-CH 60V 61A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Ta), 118W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 29A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione67.674
MOSFET (Metal Oxide)
60V
11A (Ta), 61A (Tc)
4.5V, 10V
2.5V @ 250µA
85nC @ 10V
4800pF @ 25V
±20V
-
4.1W (Ta), 118W (Tc)
16 mOhm @ 29A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTMFS4833NT1G
ON Semiconductor

MOSFET N-CH 30V 16A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 910mW (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione19.812
MOSFET (Metal Oxide)
30V
16A (Ta), 156A (Tc)
4.5V, 10V
2.5V @ 250µA
88nC @ 11.5V
5600pF @ 12V
±20V
-
910mW (Ta), 125W (Tc)
2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTB5605PT4G
ON Semiconductor

MOSFET P-CH 60V 18.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione289.416
MOSFET (Metal Oxide)
60V
18.5A (Ta)
5V
2V @ 250µA
22nC @ 5V
1190pF @ 25V
±20V
-
88W (Tc)
140 mOhm @ 8.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTD25P03LT4G
ON Semiconductor

MOSFET P-CH 30V 25A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tj)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione451.212
MOSFET (Metal Oxide)
30V
25A (Ta)
4V, 5V
2V @ 250µA
20nC @ 5V
1260pF @ 25V
±15V
-
75W (Tj)
80 mOhm @ 25A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD6416ANLT4G
ON Semiconductor

MOSFET N-CH 100V 19A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 74 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione180.516
MOSFET (Metal Oxide)
100V
19A (Tc)
4.5V, 10V
2.2V @ 250µA
40nC @ 10V
1000pF @ 25V
±20V
-
71W (Tc)
74 mOhm @ 19A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD6416ANT4G
ON Semiconductor

MOSFET N-CH 100V 17A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 81 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione150.300
MOSFET (Metal Oxide)
100V
17A (Tc)
10V
4V @ 250µA
20nC @ 10V
620pF @ 25V
±20V
-
71W (Tc)
81 mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTTFS5116PLTAG
ON Semiconductor

MOSFET P-CH 60V 5.7A 8-WDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione12.108
MOSFET (Metal Oxide)
60V
5.7A (Ta)
4.5V, 10V
3V @ 250µA
25nC @ 10V
1258pF @ 30V
±20V
-
3.2W (Ta), 40W (Tc)
52 mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
hot NTF2955T1G
ON Semiconductor

MOSFET P-CH 60V 1.7A SOT-223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione2.449.680
MOSFET (Metal Oxide)
60V
1.7A (Ta)
10V
4V @ 1mA
14.3nC @ 10V
492pF @ 25V
±20V
-
1W (Ta)
185 mOhm @ 2.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot NTTFS5826NLTAG
ON Semiconductor

MOSFET N-CH 60V 8A 8-WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione113.640
MOSFET (Metal Oxide)
60V
8A (Ta)
4.5V, 10V
3V @ 250µA
25nC @ 10V
850pF @ 25V
±20V
-
3.1W (Ta), 19W (Tc)
24 mOhm @ 7.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
hot NTTFS5820NLTAG
ON Semiconductor

MOSFET N-CH 60V 37A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1462pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione12.276
MOSFET (Metal Oxide)
60V
11A (Ta), 37A (Tc)
4.5V, 10V
2.3V @ 250µA
28nC @ 10V
1462pF @ 25V
±20V
-
2.7W (Ta), 33W (Tc)
11.5 mOhm @ 8.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
hot NTF3055L108T1G
ON Semiconductor

MOSFET N-CH 60V 3A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione1.723.716
MOSFET (Metal Oxide)
60V
3A (Ta)
5V
2V @ 250µA
15nC @ 5V
440pF @ 25V
±15V
-
1.3W (Ta)
120 mOhm @ 1.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot NTD5865NLT4G
ON Semiconductor

MOSFET N-CH 60V 46A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione784.644
MOSFET (Metal Oxide)
60V
46A (Tc)
4.5V, 10V
2V @ 250µA
29nC @ 10V
1400pF @ 25V
±20V
-
71W (Tc)
16 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTS4409NT1G
ON Semiconductor

MOSFET N-CH 25V 700MA SOT-323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 280mW (Tj)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3 (SOT323)
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione2.630.652
MOSFET (Metal Oxide)
25V
700mA (Ta)
2.7V, 4.5V
1.5V @ 250µA
1.5nC @ 4.5V
60pF @ 10V
±8V
-
280mW (Tj)
350 mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
hot NTJS3151PT1G
ON Semiconductor

MOSFET P-CH 12V 2.7A SOT-363

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 12V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-88/SC70-6/SOT-363
  • Package / Case: 6-TSSOP, SC-88, SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione1.881.084
MOSFET (Metal Oxide)
12V
2.7A (Ta)
1.8V, 4.5V
1.2V @ 100µA
8.6nC @ 4.5V
850pF @ 12V
±12V
-
625mW (Ta)
60 mOhm @ 3.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-88/SC70-6/SOT-363
6-TSSOP, SC-88, SOT-363
hot NTJS3157NT1G
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT-363

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-88/SC70-6/SOT-363
  • Package / Case: 6-TSSOP, SC-88, SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione3.742.284
MOSFET (Metal Oxide)
20V
3.2A (Ta)
1.8V, 4.5V
1V @ 250µA
15nC @ 4.5V
500pF @ 10V
±8V
-
1W (Ta)
60 mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-88/SC70-6/SOT-363
6-TSSOP, SC-88, SOT-363
hot NTR4501NT1G
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Tj)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.225.900
MOSFET (Metal Oxide)
20V
3.2A (Ta)
1.8V, 4.5V
1.2V @ 250µA
6nC @ 4.5V
200pF @ 10V
±12V
-
1.25W (Tj)
80 mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot NTK3134NT1G
ON Semiconductor

MOSFET N-CH 20V 750MA SOT-723

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 890mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-723
  • Package / Case: SOT-723
pacchetto: SOT-723
Azione8.085.756
MOSFET (Metal Oxide)
20V
750mA (Ta)
1.5V, 4.5V
1.2V @ 250µA
-
120pF @ 16V
±6V
-
310mW (Ta)
350 mOhm @ 890mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
hot NTR0202PLT1G
ON Semiconductor

MOSFET P-CH 20V 400MA SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.226.640
MOSFET (Metal Oxide)
20V
400mA (Ta)
4.5V, 10V
2.3V @ 250µA
2.18nC @ 10V
70pF @ 5V
±20V
-
225mW (Ta)
800 mOhm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot NTS4101PT1G
ON Semiconductor

MOSFET P-CH 20V 1.37A SOT-323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 20V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 329mW (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3 (SOT323)
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione449.532
MOSFET (Metal Oxide)
20V
1.37A (Ta)
2.5V, 4.5V
1.5V @ 250µA
9nC @ 4.5V
840pF @ 20V
±8V
-
329mW (Ta)
120 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
hot NTR5198NLT1G
ON Semiconductor

MOSFET N-CH 60V 1.7A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione204.252
MOSFET (Metal Oxide)
60V
1.7A (Ta)
4.5V, 10V
2.5V @ 250µA
2.8nC @ 4.5V
182pF @ 25V
±20V
-
900mW (Ta)
155 mOhm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot NTS4001NT1G
ON Semiconductor

MOSFET N-CH 30V 270MA SOT-323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3 (SOT323)
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione1.863.048
MOSFET (Metal Oxide)
30V
270mA (Ta)
2.5V, 4V
1.5V @ 100µA
1.3nC @ 5V
33pF @ 5V
±20V
-
330mW (Ta)
1.5 Ohm @ 10mA, 4V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
hot BSS84LT1G
ON Semiconductor

MOSFET P-CH 50V 130MA SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.646.668
MOSFET (Metal Oxide)
50V
130mA (Ta)
5V
2V @ 250µA
-
30pF @ 5V
±20V
-
225mW (Ta)
10 Ohm @ 100mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot BSS123LT1G
ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione1.098.564
MOSFET (Metal Oxide)
100V
170mA (Ta)
10V
2.8V @ 1mA
-
20pF @ 25V
±20V
-
225mW (Ta)
6 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot BSS138LT1G
ON Semiconductor

MOSFET N-CH 50V 200MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.160.040
MOSFET (Metal Oxide)
50V
200mA (Ta)
5V
1.5V @ 1mA
-
50pF @ 25V
±20V
-
225mW (Ta)
3.5 Ohm @ 200mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot BSS138LT3G
ON Semiconductor

MOSFET N-CH 50V 200MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione12.204
MOSFET (Metal Oxide)
50V
200mA (Ta)
5V
1.5V @ 1mA
-
50pF @ 25V
±20V
-
225mW (Ta)
3.5 Ohm @ 200mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot 2N7002LT1G
ON Semiconductor

MOSFET N-CH 60V 0.115A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione11.691.168
MOSFET (Metal Oxide)
60V
115mA (Tc)
5V, 10V
2.5V @ 250µA
-
50pF @ 25V
±20V
-
225mW (Ta)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3