Pagina 18 - Prodotti NXP - Transistor - FET, MOSFET - Singoli

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
CA/JCOP/MF4K/4B-UZ	NXP	CA/JCOP/MF4K/4B-UZ FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione7.328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK7Y25-80E/GFX	NXP	MOSFET N-CH LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	pacchetto: SC-100, SOT-669	Azione3.968	MOSFET (Metal Oxide)	80V	39A (Tc)	10V	4V @ 1mA	25.9nC @ 10V	1800pF @ 25V	±20V	-	95W (Tc)	25 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK7Y25-80E/CX	NXP	MOSFET N-CH LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	pacchetto: SC-100, SOT-669	Azione7.088	MOSFET (Metal Oxide)	80V	39A (Tc)	10V	4V @ 1mA	25.9nC @ 10V	1800pF @ 25V	±20V	-	95W (Tc)	25 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK7Y25-60E/GFX	NXP	MOSFET N-CH LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione7.488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK761R7-40E/GFJ	NXP	MOSFET N-CH D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione3.328	-	-	-	10V	-	-	-	±20V	-	-	-	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK98150-55,135	NXP	MOSFET N-CH 55V 5.5A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 8.3W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	pacchetto: TO-261-4, TO-261AA	Azione4.208	MOSFET (Metal Oxide)	55V	5.5A (Tc)	5V	2V @ 1mA	-	330pF @ 25V	±10V	-	8.3W (Tc)	150 mOhm @ 5A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
PSMN7R6-60XSQ	NXP	MOSFET N-CH 60V TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	pacchetto: TO-220-3 Full Pack, Isolated Tab	Azione2.000	MOSFET (Metal Oxide)	60V	51.5A (Tc)	10V	4.6V @ 1mA	38.7nC @ 10V	2651pF @ 30V	±20V	-	46W (Tc)	7.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack, Isolated Tab
BUK761R5-40EJ	NXP	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.51 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione2.608	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 1mA	145nC @ 10V	11340pF @ 25V	±20V	-	349W (Tc)	1.51 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN8R5-108ESQ	NXP	MOSFET N-CH 108V 100A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 108V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5512pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA	Azione3.520	MOSFET (Metal Oxide)	108V	100A (Tj)	10V	4V @ 1mA	111nC @ 10V	5512pF @ 50V	±20V	-	263W (Tc)	8.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
PSMN3R9-60XSQ	NXP	MOSFET N-CH 60V 75A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5494pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack, Isolated Tab	pacchetto: TO-220-3 Full Pack, Isolated Tab	Azione3.344	MOSFET (Metal Oxide)	60V	75A (Tc)	10V	4V @ 1mA	103nC @ 10V	5494pF @ 25V	±20V	-	55W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack, Isolated Tab