Prodotti NXP - Transistor - FET, MOSFET - Singoli

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUK652R0-30C,127	NXP	MOSFET N-CH 30V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 229nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14964pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione3.856	MOSFET (Metal Oxide)	30V	120A (Tc)	4.5V, 10V	2.8V @ 1mA	229nC @ 10V	14964pF @ 25V	±16V	-	306W (Tc)	2.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK652R1-30C,127	NXP	MOSFET N-CH 30V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 168nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10918pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione5.504	MOSFET (Metal Oxide)	30V	120A (Tc)	4.5V, 10V	2.8V @ 1mA	168nC @ 10V	10918pF @ 25V	±16V	-	263W (Tc)	2.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK652R3-40C,127	NXP	MOSFET N-CH 40V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione7.184	MOSFET (Metal Oxide)	40V	120A (Tc)	4.5V, 10V	2.8V @ 1mA	260nC @ 10V	15100pF @ 25V	±16V	-	306W (Tc)	2.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK652R6-40C,127	NXP	MOSFET N-CH 40V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione5.312	MOSFET (Metal Oxide)	40V	120A (Tc)	4.5V, 10V	2.8V @ 1mA	199nC @ 10V	11334pF @ 25V	±16V	-	263W (Tc)	2.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK7880-55A,115	NXP	MOSFET N-CH 55V 7A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	pacchetto: TO-261-4, TO-261AA	Azione6.112	MOSFET (Metal Oxide)	55V	7A (Tc)	10V	4V @ 1mA	12nC @ 10V	500pF @ 25V	±20V	-	8W (Tc)	80 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BUK794R1-40BT,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6808pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	pacchetto: TO-220-5	Azione7.344	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	83nC @ 10V	6808pF @ 25V	±20V	Temperature Sensing Diode	272W (Tc)	4.1 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-5	TO-220-5
BUK95180-100A,127	NXP	MOSFET N-CH 100V 11A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 173 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione7.200	MOSFET (Metal Oxide)	100V	11A (Tc)	4.5V, 10V	2V @ 1mA	-	619pF @ 25V	±15V	-	54W (Tc)	173 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9520-55A,127	NXP	MOSFET N-CH 55V 54A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 118W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione4.928	MOSFET (Metal Oxide)	55V	54A (Tc)	4.5V, 10V	2V @ 1mA	-	2210pF @ 25V	±10V	-	118W (Tc)	18 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9523-75A,127	NXP	MOSFET N-CH 75V 53A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 138W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione5.344	MOSFET (Metal Oxide)	75V	53A (Tc)	4.5V, 10V	2V @ 1mA	-	3120pF @ 25V	±10V	-	138W (Tc)	22 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK98180-100A,115	NXP	MOSFET N-CH 100V 4.6A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 8W (Tc) Rds On (Max) @ Id, Vgs: 173 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	pacchetto: TO-261-4, TO-261AA	Azione7.360	MOSFET (Metal Oxide)	100V	4.6A (Tc)	4.5V, 10V	2V @ 1mA	-	619pF @ 25V	±10V	-	8W (Tc)	173 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
PSMN2R2-30YLC-GFX	NXP	PSMN2R2-30YLC/GFX FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PH1030DLSX	NXP	POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMN2R9-25YLC-GFX	NXP	PSMN2R9-25YLC/GFX FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMXB65ENE-147	NXP	NOW NEXPERIA PMXB65ENE - SMALL S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1010D-3 Package / Case: 3-XDFN Exposed Pad	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.2A (Ta)	4.5V, 10V	2.5V @ 250µA	11 nC @ 10 V	295 pF @ 15 V	±20V	-	400mW (Ta), 8.33W (Tc)	67mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
PH2625L-115	NXP	MOSFET N-CH 25V 100A LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMV62XN-215	NXP	MOSFET N-CH SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PH5030ALS-115	NXP	MOSFET N-CH 30V TRENCH LFPACK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK7618-55-C-118	NXP	N-CHANNEL TRENCHMOS LOGIC LEVEL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK964R2-55B-C	NXP	N-CHANNEL TRENCHMOS LOGIC LEVEL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMZB290UN-FYL	NXP	PMZB290UN/FYL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NOCATSTYPE	NXP	MOSFET PMV77EN TO-236AB REELLP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PH7030ALS-115	NXP	MOSFET N-CH 30V TRENCH LFPACK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMN2R9-30MLC-GFX	NXP	PSMN2R9-30MLC/GFX FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PH5830DL-115	NXP	PH5830 - N-CHANNEL TRENCHMOS LOG FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NX2020P1X	NXP	NX2020P1X FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NX7002AK-R	NXP	NX7002AK.R FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMN6R5-25YLC-GFX	NXP	PSMN6R5-25YLC/GFX FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMN0R9-25YLC-GFX	NXP	PSMN0R9-25YLC/GFX FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-