Pagina 16 - Prodotti Microchip Technology - Transistor - FET, MOSFET - Singoli | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 809
Language Translation

* Please refer to the English Version as our Official Version.

Prodotti Microchip Technology - Transistor - FET, MOSFET - Singoli

Record 441
Pagina  16/16
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MIC94031CYW
Microchip Technology

MOSFET P-CH 16V 1A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione2.080
MOSFET (Metal Oxide)
16V
1A (Ta)
-
1.4V @ 250µA
-
-
-
-
568mW (Ta)
450 mOhm @ 100mA, 10V
-55°C ~ 150°C (TJ)
-
-
-
MIC94053BC6-TR
Microchip Technology

MOSFET P-CH 6V 2A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 6V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): 270mW (Ta)
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione7.888
MOSFET (Metal Oxide)
6V
2A (Ta)
1.8V, 4.5V
1.2V @ 250µA
-
-
6V
-
270mW (Ta)
84 mOhm @ 100mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
MIC94052BC6-TR
Microchip Technology

MOSFET P-CH 6V 2A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 6V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): 270mW (Ta)
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione6.496
MOSFET (Metal Oxide)
6V
2A (Ta)
1.8V, 4.5V
1.2V @ 250µA
-
-
6V
-
270mW (Ta)
84 mOhm @ 100mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
MIC94051BM4 TR
Microchip Technology

MOSFET P-CH 6V 1.8A 8MSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 6V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-143
  • Package / Case: TO-253-4, TO-253AA
pacchetto: TO-253-4, TO-253AA
Azione6.976
MOSFET (Metal Oxide)
6V
1.8A (Ta)
1.8V, 4.5V
1.2V @ 250µA
-
600pF @ 5.5V
6V
-
568mW (Ta)
160 mOhm @ 100mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143
TO-253-4, TO-253AA
MIC94050BM4 TR
Microchip Technology

MOSFET P-CH 6V 1.8A SOT-143

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 6V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-143
  • Package / Case: TO-253-4, TO-253AA
pacchetto: TO-253-4, TO-253AA
Azione5.456
MOSFET (Metal Oxide)
6V
1.8A (Ta)
1.8V, 4.5V
1.2V @ 250µA
-
600pF @ 5.5V
6V
-
568mW (Ta)
160 mOhm @ 100mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143
TO-253-4, TO-253AA
hot MIC94031BM4 TR
Microchip Technology

MOSFET P-CH 16V 1A SOT-143

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
  • Vgs (Max): 16V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-143
  • Package / Case: TO-253-4, TO-253AA
pacchetto: TO-253-4, TO-253AA
Azione138.000
MOSFET (Metal Oxide)
16V
1A (Ta)
2.7V, 10V
1.4V @ 250µA
-
100pF @ 12V
16V
-
568mW (Ta)
450 mOhm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-143
TO-253-4, TO-253AA
MIC94031YM4-TR
Microchip Technology

MOSFET P-CH 16V 1A SOT-143

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
  • Vgs (Max): 16V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-143
  • Package / Case: TO-253-4, TO-253AA
pacchetto: TO-253-4, TO-253AA
Azione2.336
MOSFET (Metal Oxide)
16V
1A (Ta)
2.7V, 10V
1.4V @ 250µA
-
100pF @ 12V
16V
-
568mW (Ta)
450 mOhm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-143
TO-253-4, TO-253AA
TN2640K4-G
Microchip Technology

MOSFET N-CH 400V 500MA 3DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.680
MOSFET (Metal Oxide)
400V
500mA (Tj)
4.5V, 10V
2V @ 2mA
-
225pF @ 25V
±20V
-
2.5W (Ta)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
VP2206N3-G-P003
Microchip Technology

MOSFET P-CH 60V 640MA TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione2.624
MOSFET (Metal Oxide)
60V
640mA (Tj)
5V, 10V
3.5V @ 10mA
-
450pF @ 25V
±20V
-
740mW (Tc)
900 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TP2640LG-G
Microchip Technology

MOSFET P-CH 400V 0.086A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.744
MOSFET (Metal Oxide)
400V
86mA (Tj)
2.5V, 10V
2V @ 1mA
-
300pF @ 25V
±20V
-
740mW (Ta)
15 Ohm @ 300mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot TN2640LG-G
Microchip Technology

MOSFET N-CH 400V 260MA 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione14.736
MOSFET (Metal Oxide)
400V
260mA (Tj)
4.5V, 10V
2V @ 2mA
-
225pF @ 25V
±20V
-
1.3W (Ta)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
LP0701LG-G
Microchip Technology

MOSFET P-CH 16.5V 0.7A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16.5V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 300mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.808
MOSFET (Metal Oxide)
16.5V
700mA (Tj)
2V, 5V
1V @ 1mA
-
250pF @ 15V
±10V
-
1.5W (Tc)
1.5 Ohm @ 300mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
VP0550N3-G-P013
Microchip Technology

MOSFET P-CH 500V 0.054A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 54mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 Ohm @ 10mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.216
MOSFET (Metal Oxide)
500V
54mA (Tj)
5V, 10V
4.5V @ 1mA
-
70pF @ 25V
±20V
-
1W (Tc)
125 Ohm @ 10mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN1206L-G-P002
Microchip Technology

MOSFET N-CH 120V 0.23A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.312
MOSFET (Metal Oxide)
120V
230mA (Tj)
2.5V, 10V
2V @ 1mA
-
125pF @ 25V
±30V
-
1W (Tc)
6 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot VP3203N8-G
Microchip Technology

MOSFET P-CH 30V 1.1A SOT89-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
pacchetto: TO-243AA
Azione68.280
MOSFET (Metal Oxide)
30V
1.1A (Tj)
4.5V, 10V
3.5V @ 10mA
-
300pF @ 25V
±20V
-
1.6W (Ta)
600 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
VN0550N3-G-P013
Microchip Technology

MOSFET N-CH 500V 50MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 50mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.480
MOSFET (Metal Oxide)
500V
50mA (Tj)
5V, 10V
4V @ 1mA
-
55pF @ 25V
±20V
-
1W (Tc)
60 Ohm @ 50mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TP2540N3-G-P002
Microchip Technology

MOSFET P-CH 400V 0.086A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione6.832
MOSFET (Metal Oxide)
400V
86mA (Tj)
4.5V, 10V
2.4V @ 1mA
-
125pF @ 25V
±20V
-
740mW (Ta)
25 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TP2435N8-G
Microchip Technology

MOSFET P-CH 350V 0.231A SOT89-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 231mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
pacchetto: TO-243AA
Azione7.168
MOSFET (Metal Oxide)
350V
231mA (Tj)
3V, 10V
2.4V @ 1mA
-
200pF @ 25V
±20V
-
1.6W (Ta)
15 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
hot VN3205N8-G
Microchip Technology

MOSFET N-CH 50V 1.5A SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
pacchetto: TO-243AA
Azione8.784
MOSFET (Metal Oxide)
50V
1.5A (Tj)
4.5V, 10V
2.4V @ 10mA
-
300pF @ 25V
±20V
-
1.6W (Ta)
300 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
VN3205N3-G-P002
Microchip Technology

MOSFET N-CH 50V 1.2A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione4.192
MOSFET (Metal Oxide)
50V
1.2A (Tj)
4.5V, 10V
2.4V @ 10mA
-
300pF @ 25V
±20V
-
1W (Tc)
300 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TP2424N8-G
Microchip Technology

MOSFET P-CH 240V 0.316A SOT89-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: 316mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
pacchetto: TO-243AA
Azione6.016
MOSFET (Metal Oxide)
240V
316mA (Tj)
4.5V, 10V
2.4V @ 1mA
-
200pF @ 25V
±20V
-
1.6W (Ta)
8 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA