Prodotti Microchip Technology - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Microchip Technology - Transistor - FET, MOSFET - Singoli

Record 441
Pagina  1/16
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CC1202
Microchip Technology

MOSFET N-CH 800V 13A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
800 V
-
-
-
-
-
-
-
-
-
-
-
-
-
APT20M22JVR
Microchip Technology

MOSFET N-CH 200V 97A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
200 V
97A (Tc)
-
4V @ 2.5mA
435 nC @ 10 V
10200 pF @ 25 V
-
-
-
22mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT8015JVR
Microchip Technology

MOSFET N-CH 800V 44A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 17650 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
800 V
44A (Tc)
-
4V @ 5mA
285 nC @ 10 V
17650 pF @ 25 V
-
-
-
150mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT6011B2VRG
Microchip Technology

MOSFET N-CH 600V 49A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 24.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
49A (Tc)
-
4V @ 2.5mA
450 nC @ 10 V
8900 pF @ 25 V
-
-
-
110mOhm @ 24.5A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT5018SLLG
Microchip Technology

MOSFET N-CH 500V 27A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
500 V
27A (Tc)
-
5V @ 1mA
58 nC @ 10 V
2596 pF @ 25 V
-
-
-
180mOhm @ 13.5A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT8052BFLLG
Microchip Technology

MOSFET N-CH 800V 15A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
800 V
15A (Tc)
-
5V @ 1mA
75 nC @ 10 V
2035 pF @ 25 V
-
-
-
520mOhm @ 7.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
MSC130SM120JCU2
Microchip Technology

SICFET N-CH 1.2KV 173A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 745W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
173A (Tc)
20V
2.8V @ 2mA
464 nC @ 20 V
6040 pF @ 1000 V
+25V, -10V
-
745W (Tc)
16mOhm @ 80A, 20V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
MSC130SM120JCU3
Microchip Technology

SICFET N-CH 1.2KV 173A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 745W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
173A (Tc)
20V
2.8V @ 2mA
464 nC @ 20 V
6040 pF @ 1000 V
+25V, -10V
-
745W (Tc)
16mOhm @ 80A, 20V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
MSC750SMA170S
Microchip Technology

TRANS SJT 1700V D3PAK

  • FET Type: -
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
Azione1.548
SiCFET (Silicon Carbide)
1700 V
6A (Tc)
-
-
-
-
-
-
-
-
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC750SMA170B
Microchip Technology

SICFET N-CH 1700V 7A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Azione750
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
184 pF @ 1360 V
+23V, -10V
-
68W (Tc)
940mOhm @ 2.5A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT8065SVRG
Microchip Technology

MOSFET N-CH 800V 13A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
800 V
13A (Tc)
-
4V @ 1mA
225 nC @ 10 V
3700 pF @ 25 V
-
-
-
650mOhm @ 500mA, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6010LFLLG
Microchip Technology

MOSFET N-CH 600V 54A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
54A (Tc)
-
5V @ 2.5mA
150 nC @ 10 V
6710 pF @ 25 V
-
-
-
100mOhm @ 27A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
MRH15N19U3SR
Microchip Technology

RH MOSFET 150V U3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U3 (SMD-0.5)
  • Package / Case: 3-SMD, No Lead
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
150 V
19A (Tc)
12V
4V @ 1mA
50 nC @ 12 V
2140 pF @ 25 V
±20V
-
75W (Tc)
88mOhm @ 12A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
U3 (SMD-0.5)
3-SMD, No Lead
APT10035JFLL
Microchip Technology

MOSFET N-CH 1000V 25A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
25A (Tc)
-
5V @ 2.5mA
186 nC @ 10 V
5185 pF @ 25 V
-
-
520W (Tc)
370mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT10M19BVRG
Microchip Technology

MOSFET N-CH 100V 75A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
pacchetto: -
Azione111
MOSFET (Metal Oxide)
100 V
75A (Tc)
-
4V @ 1mA
300 nC @ 10 V
6120 pF @ 25 V
-
-
-
19mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
MSC40SM120JCU3
Microchip Technology

SICFET N-CH 1.2KV 55A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Azione129
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
20V
2.7V @ 1mA
137 nC @ 20 V
1990 pF @ 1000 V
+25V, -10V
-
245W (Tc)
50mOhm @ 40A, 20V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
MSC40SM120JCU2
Microchip Technology

SICFET N-CH 1.2KV 55A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Azione51
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
20V
2.7V @ 1mA
137 nC @ 20 V
1990 pF @ 1000 V
+25V, -10V
-
245W (Tc)
50mOhm @ 40A, 20V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
MSC060SMA070S
Microchip Technology

SICFET N-CH 700V 37A D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
Azione141
SiCFET (Silicon Carbide)
700 V
37A (Tc)
20V
2.4V @ 1mA (Typ)
56 nC @ 20 V
1175 pF @ 700 V
+23V, -10V
-
130W (Tc)
75mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC060SMA070B
Microchip Technology

SICFET N-CH 700V 39A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Azione33
SiCFET (Silicon Carbide)
700 V
39A (Tc)
20V
2.4V @ 1mA
56 nC @ 20 V
1175 pF @ 700 V
+23V, -10V
-
143W (Tc)
75mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT10050B2VFRG
Microchip Technology

MOSFET N-CH 1000V 21A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
pacchetto: -
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MOSFET (Metal Oxide)
1000 V
21A (Tc)
-
4V @ 2.5mA
500 nC @ 10 V
7900 pF @ 25 V
-
-
-
500mOhm @ 500mA, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
MSCSM120DAM31CTBL1NG
Microchip Technology

PM-MOSFET-SIC-SBD-BL1

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 310W
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: -
  • Package / Case: Module
pacchetto: -
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SiCFET (Silicon Carbide)
1200 V
79A
20V
2.8V @ 1mA
232 nC @ 20 V
3020 pF @ 1000 V
+25V, -10V
-
310W
31mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Chassis Mount
-
Module
APT18M100S
Microchip Technology

MOSFET N-CH 1000V 18A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
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MOSFET (Metal Oxide)
1000 V
18A (Tc)
10V
5V @ 1mA
150 nC @ 10 V
4845 pF @ 25 V
±30V
-
625W (Tc)
700mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6025BFLLG
Microchip Technology

MOSFET N-CH 600V 24A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
pacchetto: -
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MOSFET (Metal Oxide)
600 V
24A (Tc)
-
5V @ 1mA
65 nC @ 10 V
2910 pF @ 25 V
-
-
-
250mOhm @ 12A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
APT8020JFLL
Microchip Technology

MOSFET N-CH 800V 33A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 16.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
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MOSFET (Metal Oxide)
800 V
33A (Tc)
-
5V @ 2.5mA
195 nC @ 10 V
5200 pF @ 25 V
-
-
-
220mOhm @ 16.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT8020B2FLLG
Microchip Technology

MOSFET N-CH 800V 38A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
pacchetto: -
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MOSFET (Metal Oxide)
800 V
38A (Tc)
-
5V @ 2.5mA
195 nC @ 10 V
5200 pF @ 25 V
-
-
-
220mOhm @ 19A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT6038BLLG
Microchip Technology

MOSFET N-CH 600V 17A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 8.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
pacchetto: -
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MOSFET (Metal Oxide)
600 V
17A (Tc)
-
5V @ 1mA
43 nC @ 10 V
1850 pF @ 25 V
-
-
-
380mOhm @ 8.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
MRH25N12U3SR
Microchip Technology

RH MOSFET 250V U3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U3 (SMD-0.5)
  • Package / Case: 3-SMD, No Lead
pacchetto: -
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MOSFET (Metal Oxide)
250 V
12.4A (Tc)
12V
4V @ 1mA
50 nC @ 12 V
1980 pF @ 25 V
±20V
-
75W (Tc)
210mOhm @ 7.8A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
U3 (SMD-0.5)
3-SMD, No Lead
APT5014BFLLG
Microchip Technology

MOSFET N-CH 500V 35A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
pacchetto: -
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MOSFET (Metal Oxide)
500 V
35A (Tc)
-
5V @ 1mA
72 nC @ 10 V
3261 pF @ 25 V
-
-
-
140mOhm @ 17.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3