Pagina 49 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

IWM023N08NM5XUMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

BSB014N04LX3GXUMA1

Infineon Technologies

MOSFET N-CH 40V 36A/180A 2WDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2, CanPAK M™
Package / Case: 3-WDSON

pacchetto: -

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MOSFET (Metal Oxide)

40 V

36A (Ta), 180A (Tc)

4.5V, 10V

2V @ 250µA

196 nC @ 10 V

16900 pF @ 20 V

±20V

-

2.8W (Ta), 89W (Tc)

1.4mOhm @ 30A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

MG-WDSON-2, CanPAK M™

3-WDSON

IPI90R500C3XKSA2

Infineon Technologies

MOSFET N-CH 900V 11A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

pacchetto: -

Azione1.914

MOSFET (Metal Oxide)

900 V

11A (Tc)

10V

3.5V @ 740µA

68 nC @ 10 V

1700 pF @ 100 V

±20V

-

156W (Tc)

500mOhm @ 6.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3-1

TO-262-3 Long Leads, I2PAK, TO-262AA

IPP60R070CFD7XKSA1

Infineon Technologies

MOSFET N-CH 650V 31A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacchetto: -

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MOSFET (Metal Oxide)

650 V

31A (Tc)

10V

4.5V @ 760µA

67 nC @ 10 V

2721 pF @ 400 V

±20V

-

156W (Tc)

70mOhm @ 15.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IAUCN08S7N013ATMA1

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-53
Package / Case: 8-PowerTDFN

pacchetto: -

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MOSFET (Metal Oxide)

80 V

274A (Tj)

7V, 10V

3.2V @ 130µA

116 nC @ 10 V

8402 pF @ 40 V

±20V

-

219W (Tc)

1.3mOhm @ 88A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-53

8-PowerTDFN

IPB65R050CFD7AATMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS PG-TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

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MOSFET (Metal Oxide)

650 V

45A (Tc)

10V

4.5V @ 1.24mA

102 nC @ 10 V

4975 pF @ 400 V

±30V

-

227W (Tc)

50mOhm @ 24.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

SISC262SN06LX6SA1

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IQE057N10NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

BSC011N03LSATMA1

Infineon Technologies

MOSFET N-CH 30V 37A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

pacchetto: -

Azione125.160

MOSFET (Metal Oxide)

30 V

37A (Ta), 100A (Tc)

4.5V, 10V

2.2V @ 250µA

72 nC @ 10 V

4700 pF @ 15 V

±20V

-

2.5W (Ta), 96W (Tc)

1.1mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-1

8-PowerTDFN

IPW90R340C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 15A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-21
Package / Case: TO-247-3

pacchetto: -

Azione144

MOSFET (Metal Oxide)

900 V

15A (Tc)

10V

3.5V @ 1mA

94 nC @ 10 V

2400 pF @ 100 V

±20V

-

208W (Tc)

340mOhm @ 9.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-21

TO-247-3

IMZA65R040M2HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IPP147N12N3GXKSA1

Infineon Technologies

MOSFET N-CH 120V 56A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacchetto: -

Azione53.151

MOSFET (Metal Oxide)

120 V

56A (Ta)

10V

4V @ 61µA

49 nC @ 10 V

3220 pF @ 60 V

±20V

-

107W (Tc)

14.7mOhm @ 56A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IAUC24N10S5L300ATMA1

Infineon Technologies

MOSFET N-CH 100V 24A TDSON-8-33

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-33
Package / Case: 8-PowerTDFN

pacchetto: -

Azione15.018

MOSFET (Metal Oxide)

100 V

24A (Tc)

4.5V, 10V

2.2V @ 12µA

11 nC @ 10 V

670 pF @ 50 V

±20V

-

38W (Tc)

30mOhm @ 12A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-33

8-PowerTDFN

AUXCLF1404STRL

Infineon Technologies

MOSFET N-CH 40V 162A D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IQE004NE1LM7CGSCATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 15 V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs(th) (Max) @ Id: 2V @ 432µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Vgs (Max): ±7V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WHTFN-9
Package / Case: 9-PowerWDFN

pacchetto: -

Azione32.748

MOSFET (Metal Oxide)

15 V

58A (Ta), 379A (Tc)

4.5V, 7V

2V @ 432µA

55 nC @ 7 V

6240 pF @ 7.5 V

±7V

-

2.1W (Ta), 89W (Tc)

0.45mOhm @ 30A, 7V

-55°C ~ 150°C (TJ)

Surface Mount

PG-WHTFN-9

9-PowerWDFN

ISC035N10NM5LF2ATMA1

Infineon Technologies

ISC035N10NM5LF2ATMA1 MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

pacchetto: -

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MOSFET (Metal Oxide)

100 V

19A (Ta), 164A (Tc)

10V

3.9V @ 115µA

88 nC @ 10 V

7200 pF @ 50 V

±20V

-

3W (Ta), 217W (Tc)

3.5mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

SPI15N60CFD

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

pacchetto: -

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MOSFET (Metal Oxide)

600 V

13.4A (Tc)

10V

5V @ 750µA

84 nC @ 10 V

1820 pF @ 25 V

±20V

-

156W (Tc)

330mOhm @ 9.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3-1

TO-262-3 Long Leads, I2PAK, TO-262AA

SPS03N60C3

Infineon Technologies

MOSFET N-CH 600V 3.2A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3-11
Package / Case: TO-251-3 Stub Leads, IPAK

pacchetto: -

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MOSFET (Metal Oxide)

600 V

3.2A (Tc)

10V

3.9V @ 135µA

17 nC @ 10 V

400 pF @ 25 V

±20V

-

38W (Tc)

1.4Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO251-3-11

TO-251-3 Stub Leads, IPAK

IGO60R070D1AUMA1

Infineon Technologies

GANFET N-CH 600V 31A 20DSO

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-20-85
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)

pacchetto: -

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GaNFET (Gallium Nitride)

600 V

31A (Tc)

-

1.6V @ 2.6mA

-

380 pF @ 400 V

-10V

-

125W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-20-85

20-PowerSOIC (0.433", 11.00mm Width)

IGO60R070D1AUMA2

Infineon Technologies

GAN HV

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-20-85
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)

pacchetto: -

Azione2.400

GaNFET (Gallium Nitride)

600 V

31A (Tc)

-

1.6V @ 2.6mA

-

380 pF @ 400 V

-10V

-

125W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-20-85

20-PowerSOIC (0.433", 11.00mm Width)

IAUC120N06S5N022ATMA1

Infineon Technologies

MOSFET_)40V 60V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

pacchetto: -

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MOSFET (Metal Oxide)

60 V

170A (Tj)

7V, 10V

3.4V @ 65µA

68 nC @ 10 V

4930 pF @ 30 V

±20V

-

136W (Tc)

2.24mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

IPA65R190DEXKSA1

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

IRFL4310TR

Infineon Technologies

MOSFET N-CH 100V 1.6A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

pacchetto: -

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MOSFET (Metal Oxide)

100 V

1.6A (Ta)

-

4V @ 250µA

25 nC @ 10 V

330 pF @ 25 V

-

200mOhm @ 1.6A, 10V

-

Surface Mount

SOT-223

TO-261-4, TO-261AA

BSS139IXTMA1

Infineon Technologies

MOSFET N-CH 250V 100MA SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs(th) (Max) @ Id: 1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3-5
Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: -

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MOSFET (Metal Oxide)

250 V

100mA (Ta)

0V, 10V

1V @ 56µA

2.3 nC @ 5 V

60 pF @ 25 V

±20V

Depletion Mode

360mW (Ta)

14Ohm @ 100mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT23-3-5

TO-236-3, SC-59, SOT-23-3

IPB018N06NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 187A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 129µA
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione1.449

MOSFET (Metal Oxide)

60 V

34A (Ta), 187A (Tc)

6V, 10V

3.3V @ 129µA

162 nC @ 10 V

7300 pF @ 30 V

±20V

-

3.8W (Ta), 188W (Tc)

1.8mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPZ40N04S5L3R6ATMA1

Infineon Technologies

MOSFET_(20V 40V) PG-TSDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 87A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs: 32.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1966 pF @ 25 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-33
Package / Case: 8-PowerTDFN

pacchetto: -

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MOSFET (Metal Oxide)

40 V

87A (Tj)

4.5V, 10V

2V @ 21µA

32.8 nC @ 10 V

1966 pF @ 25 V

±16V

-

58W (Tc)

3.6mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSDSON-8-33

8-PowerTDFN

IRL540NSTRL

Infineon Technologies

MOSFET N-CH 100V 36A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

100 V

36A (Tc)

-

2V @ 250µA

74 nC @ 5 V

1800 pF @ 25 V

-

44mOhm @ 18A, 10V

-

Surface Mount

D2PAK

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IRF7410PBF

Infineon Technologies

MOSFET P-CH 12V 16A 8SO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

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MOSFET (Metal Oxide)

12 V

16A (Ta)

1.8V, 4.5V

900mV @ 250µA

91 nC @ 4.5 V

8676 pF @ 10 V

±8V

-

2.5W (Ta)

7mOhm @ 16A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IWM023N08NM5XUMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSB014N04LX3GXUMA1	Infineon Technologies	MOSFET N-CH 40V 36A/180A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M™ Package / Case: 3-WDSON	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	40 V	36A (Ta), 180A (Tc)	4.5V, 10V	2V @ 250µA	196 nC @ 10 V	16900 pF @ 20 V	±20V	-	2.8W (Ta), 89W (Tc)	1.4mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M™	3-WDSON
IPI90R500C3XKSA2	Infineon Technologies	MOSFET N-CH 900V 11A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 740µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	pacchetto: -	Azione1.914	MOSFET (Metal Oxide)	900 V	11A (Tc)	10V	3.5V @ 740µA	68 nC @ 10 V	1700 pF @ 100 V	±20V	-	156W (Tc)	500mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2PAK, TO-262AA
IPP60R070CFD7XKSA1	Infineon Technologies	MOSFET N-CH 650V 31A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 760µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	650 V	31A (Tc)	10V	4.5V @ 760µA	67 nC @ 10 V	2721 pF @ 400 V	±20V	-	156W (Tc)	70mOhm @ 15.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IAUCN08S7N013ATMA1	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 274A (Tj) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-53 Package / Case: 8-PowerTDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	80 V	274A (Tj)	7V, 10V	3.2V @ 130µA	116 nC @ 10 V	8402 pF @ 40 V	±20V	-	219W (Tc)	1.3mOhm @ 88A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-53	8-PowerTDFN
IPB65R050CFD7AATMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS PG-TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	4.5V @ 1.24mA	102 nC @ 10 V	4975 pF @ 400 V	±30V	-	227W (Tc)	50mOhm @ 24.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SISC262SN06LX6SA1	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IQE057N10NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC011N03LSATMA1	Infineon Technologies	MOSFET N-CH 30V 37A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	pacchetto: -	Azione125.160	MOSFET (Metal Oxide)	30 V	37A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	72 nC @ 10 V	4700 pF @ 15 V	±20V	-	2.5W (Ta), 96W (Tc)	1.1mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IPW90R340C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 15A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-21 Package / Case: TO-247-3	pacchetto: -	Azione144	MOSFET (Metal Oxide)	900 V	15A (Tc)	10V	3.5V @ 1mA	94 nC @ 10 V	2400 pF @ 100 V	±20V	-	208W (Tc)	340mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-21	TO-247-3
IMZA65R040M2HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP147N12N3GXKSA1	Infineon Technologies	MOSFET N-CH 120V 56A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacchetto: -	Azione53.151	MOSFET (Metal Oxide)	120 V	56A (Ta)	10V	4V @ 61µA	49 nC @ 10 V	3220 pF @ 60 V	±20V	-	107W (Tc)	14.7mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IAUC24N10S5L300ATMA1	Infineon Technologies	MOSFET N-CH 100V 24A TDSON-8-33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	pacchetto: -	Azione15.018	MOSFET (Metal Oxide)	100 V	24A (Tc)	4.5V, 10V	2.2V @ 12µA	11 nC @ 10 V	670 pF @ 50 V	±20V	-	38W (Tc)	30mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
AUXCLF1404STRL	Infineon Technologies	MOSFET N-CH 40V 162A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IQE004NE1LM7CGSCATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15 V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 2V @ 432µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V Vgs (Max): ±7V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHTFN-9 Package / Case: 9-PowerWDFN	pacchetto: -	Azione32.748	MOSFET (Metal Oxide)	15 V	58A (Ta), 379A (Tc)	4.5V, 7V	2V @ 432µA	55 nC @ 7 V	6240 pF @ 7.5 V	±7V	-	2.1W (Ta), 89W (Tc)	0.45mOhm @ 30A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	PG-WHTFN-9	9-PowerWDFN
ISC035N10NM5LF2ATMA1	Infineon Technologies	ISC035N10NM5LF2ATMA1 MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 217W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	100 V	19A (Ta), 164A (Tc)	10V	3.9V @ 115µA	88 nC @ 10 V	7200 pF @ 50 V	±20V	-	3W (Ta), 217W (Tc)	3.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
SPI15N60CFD	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	600 V	13.4A (Tc)	10V	5V @ 750µA	84 nC @ 10 V	1820 pF @ 25 V	±20V	-	156W (Tc)	330mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2PAK, TO-262AA
SPS03N60C3	Infineon Technologies	MOSFET N-CH 600V 3.2A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3-11 Package / Case: TO-251-3 Stub Leads, IPAK	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	600 V	3.2A (Tc)	10V	3.9V @ 135µA	17 nC @ 10 V	400 pF @ 25 V	±20V	-	38W (Tc)	1.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3-11	TO-251-3 Stub Leads, IPAK
IGO60R070D1AUMA1	Infineon Technologies	GANFET N-CH 600V 31A 20DSO FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-85 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	pacchetto: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-85	20-PowerSOIC (0.433", 11.00mm Width)
IGO60R070D1AUMA2	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-85 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	pacchetto: -	Azione2.400	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-85	20-PowerSOIC (0.433", 11.00mm Width)
IAUC120N06S5N022ATMA1	Infineon Technologies	MOSFET_)40V 60V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 65µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	60 V	170A (Tj)	7V, 10V	3.4V @ 65µA	68 nC @ 10 V	4930 pF @ 30 V	±20V	-	136W (Tc)	2.24mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
IPA65R190DEXKSA1	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFL4310TR	Infineon Technologies	MOSFET N-CH 100V 1.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	100 V	1.6A (Ta)	-	4V @ 250µA	25 nC @ 10 V	330 pF @ 25 V	-	-	-	200mOhm @ 1.6A, 10V	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
BSS139IXTMA1	Infineon Technologies	MOSFET N-CH 250V 100MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 56µA Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3-5 Package / Case: TO-236-3, SC-59, SOT-23-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	250 V	100mA (Ta)	0V, 10V	1V @ 56µA	2.3 nC @ 5 V	60 pF @ 25 V	±20V	Depletion Mode	360mW (Ta)	14Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3-5	TO-236-3, SC-59, SOT-23-3
IPB018N06NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 187A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 129µA Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione1.449	MOSFET (Metal Oxide)	60 V	34A (Ta), 187A (Tc)	6V, 10V	3.3V @ 129µA	162 nC @ 10 V	7300 pF @ 30 V	±20V	-	3.8W (Ta), 188W (Tc)	1.8mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPZ40N04S5L3R6ATMA1	Infineon Technologies	MOSFET_(20V 40V) PG-TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 87A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 32.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1966 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-33 Package / Case: 8-PowerTDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	40 V	87A (Tj)	4.5V, 10V	2V @ 21µA	32.8 nC @ 10 V	1966 pF @ 25 V	±16V	-	58W (Tc)	3.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-33	8-PowerTDFN
IRL540NSTRL	Infineon Technologies	MOSFET N-CH 100V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	100 V	36A (Tc)	-	2V @ 250µA	74 nC @ 5 V	1800 pF @ 25 V	-	-	-	44mOhm @ 18A, 10V	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF7410PBF	Infineon Technologies	MOSFET P-CH 12V 16A 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	12 V	16A (Ta)	1.8V, 4.5V	900mV @ 250µA	91 nC @ 4.5 V	8676 pF @ 10 V	±8V	-	2.5W (Ta)	7mOhm @ 16A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)