Name: IAUC120N06S5N022ATMA1
Brand: Infineon Technologies
SKU: IAUC120N06S5N022ATMA1
Availability: InStock
Rating: 5 (77 reviews)

IAUC120N06S5N022ATMA1

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Numero di parte	IAUC120N06S5N022ATMA1
Produttore	Infineon Technologies
Descrizione	MOSFET_)40V 60V)
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 18 - nov 23 (Scegli una spedizione rapida)
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Stiamo offrendo IAUC120N06S5N022ATMA1 per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche IAUC120N06S5N022ATMA1

Produttore	Infineon Technologies
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	OptiMOS™-5
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Corrente - Scarico continuo (Id) @ 25 ° C	170A (Tj)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	7V, 10V
Vgs (th) (Max) @ Id	3.4V @ 65µA
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	4930 pF @ 30 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	136W (Tc)
Rds On (Max) @ Id, Vgs	2.24mOhm @ 60A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	PG-TDSON-8-34
Pacchetto / caso	8-PowerTDFN

IAUC120N06S5N022ATMA1 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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