Pagina 46 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

IPD85P04P4L06ATMA2

Infineon Technologies

MOSFET P-CH 40V 85A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 85A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

Azione12.000

MOSFET (Metal Oxide)

40 V

85A (Tc)

4.5V, 10V

2.2V @ 150µA

104 nC @ 10 V

6580 pF @ 25 V

+5V, -16V

-

88W (Tc)

6.4mOhm @ 85A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IRF7478TRPBF-1

Infineon Technologies

MOSFET N-CH 60V 7A 8SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: -

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MOSFET (Metal Oxide)

60 V

7A (Ta)

4.5V, 10V

3V @ 250µA

31 nC @ 4.5 V

1740 pF @ 25 V

±20V

-

2.5W (Ta)

26mOhm @ 4.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

ISZ034N06LM5ATMA1

Infineon Technologies

MOSFET N-CH 60V 19A/112A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-26
Package / Case: 8-PowerTDFN

pacchetto: -

Azione18.780

MOSFET (Metal Oxide)

60 V

19A (Ta), 112A (Tc)

4.5V, 10V

2.3V @ 36µA

53 nC @ 10 V

3500 pF @ 30 V

±20V

-

2.5W (Ta), 83W (Tc)

3.4mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSDSON-8-26

8-PowerTDFN

IRFC7416B

Infineon Technologies

MOSFET 30V 10A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

pacchetto: -

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MOSFET (Metal Oxide)

30 V

10A

10V

-

20mOhm @ 10A, 10V

-

Surface Mount

Die

IMBG120R008M2HXTMA1

Infineon Technologies

SIC DISCRETE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione2.937

-

IPB019N06L3GATMA1

Infineon Technologies

MOSFET N-CH 60V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione23.178

MOSFET (Metal Oxide)

60 V

120A (Tc)

4.5V, 10V

2.2V @ 196µA

166 nC @ 4.5 V

28000 pF @ 30 V

±20V

-

250W (Tc)

1.9mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPW60R125C6FKSA1

Infineon Technologies

MOSFET N-CH 600V 30A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

pacchetto: -

Azione810

MOSFET (Metal Oxide)

600 V

30A (Tc)

10V

3.5V @ 960µA

96 nC @ 10 V

2127 pF @ 100 V

±20V

-

219W (Tc)

125mOhm @ 14.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IQE057N10NM6SCATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

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-

BSZ0902NSATMA1

Infineon Technologies

MOSFET N-CH 30V 19A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

pacchetto: -

Azione298.989

MOSFET (Metal Oxide)

30 V

19A (Ta), 40A (Tc)

4.5V, 10V

2V @ 250µA

26 nC @ 10 V

1700 pF @ 15 V

±20V

-

2.1W (Ta), 48W (Tc)

2.6mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8-FL

8-PowerTDFN

AUIRL3705N

Infineon Technologies

AUIRL3705 - 55V-60V N-CHANNEL AU

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

55 V

89A (Tc)

-

2V @ 250µA

98 nC @ 5 V

3600 pF @ 25 V

-

170W (Tc)

10mOhm @ 46A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IPBE65R099CFD7AATMA1

Infineon Technologies

MOSFET N-CH 650V 24A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3-10
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

pacchetto: -

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MOSFET (Metal Oxide)

650 V

24A (Tc)

10V

4.5V @ 630µA

53 nC @ 10 V

2513 pF @ 400 V

±20V

-

127W (Tc)

99mOhm @ 12.5A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263-7-3-10

TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

AIMZH120R160M1TXKSA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 109W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-11
Package / Case: TO-247-4

pacchetto: -

Azione150

SiC (Silicon Carbide Junction Transistor)

1200 V

17A (Tc)

18V, 20V

5.1V @ 1.5mA

14 nC @ 20 V

350 pF @ 800 V

+23V, -5V

-

109W (Tc)

200mOhm @ 5A, 20V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-11

TO-247-4

IPP070N08N3G

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacchetto: -

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MOSFET (Metal Oxide)

80 V

80A (Tc)

6V, 10V

3.5V @ 73µA

56 nC @ 10 V

3840 pF @ 40 V

±20V

-

136W (Tc)

7mOhm @ 73A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

ISZ0602NLSATMA1

Infineon Technologies

MOSFET N-CH 80V 12A/64A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-26
Package / Case: 8-PowerTDFN

pacchetto: -

Azione29.577

MOSFET (Metal Oxide)

80 V

12A (Ta), 64A (Tc)

4.5V, 10V

2.3V @ 29µA

29 nC @ 10 V

1860 pF @ 40 V

±20V

-

2.1W (Ta), 60W (Tc)

7.8mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8-26

8-PowerTDFN

IAUC100N04S6N022ATMA1

Infineon Technologies

IAUC100N04S6N022ATMA1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3V @ 32µA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

pacchetto: -

Azione40.569

MOSFET (Metal Oxide)

40 V

100A (Tc)

7V, 10V

3V @ 32µA

39 nC @ 10 V

2421 pF @ 25 V

±20V

-

75W (Tc)

2.26mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPP60R950C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 4.4A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacchetto: -

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MOSFET (Metal Oxide)

600 V

4.4A (Tc)

10V

3.5V @ 130µA

13 nC @ 10 V

280 pF @ 100 V

±20V

-

37W (Tc)

950mOhm @ 1.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IPD40DP06NMATMA1

Infineon Technologies

MOSFET P-CH 60V 4.3A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 166µA
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 19W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

Azione6.903

MOSFET (Metal Oxide)

60 V

4.3A (Tc)

10V

4V @ 166µA

6.7 nC @ 10 V

260 pF @ 30 V

±20V

-

19W (Tc)

400mOhm @ 4.3A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IRFHM9331TR2PBF

Infineon Technologies

MOSFET P-CH 30V 11A 3X3 PQFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (3x3)
Package / Case: 8-PowerTDFN

pacchetto: -

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MOSFET (Metal Oxide)

30 V

11A (Ta), 24A (Tc)

-

2.4V @ 25µA

48 nC @ 10 V

1543 pF @ 25 V

-

10mOhm @ 11A, 20V

-

Surface Mount

PQFN (3x3)

8-PowerTDFN

IPB055N08NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

Azione1.794

MOSFET (Metal Oxide)

80 V

94A (Tc)

6V, 10V

3.8V @ 55µA

54 nC @ 10 V

2500 pF @ 40 V

±20V

-

107W (Tc)

5.5mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPW90R340C3FKSA1

Infineon Technologies

MOSFET N-CH 900V 15A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

pacchetto: -

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MOSFET (Metal Oxide)

900 V

15A (Tc)

10V

3.5V @ 1mA

94 nC @ 10 V

2400 pF @ 100 V

±20V

-

208W (Tc)

340mOhm @ 9.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IMYH200R075M1HXKSA1

Infineon Technologies

SIC DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 2000 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.5V @ 7.7mA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): +20V, -7V
FET Feature: -
Power Dissipation (Max): 267W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-U04
Package / Case: TO-247-4

pacchetto: -

Azione267

SiC (Silicon Carbide Junction Transistor)

2000 V

34A (Tc)

15V, 18V

5.5V @ 7.7mA

64 nC @ 18 V

-

+20V, -7V

-

267W (Tc)

98mOhm @ 13A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-U04

TO-247-4

IPLK80R900P7ATMA1

Infineon Technologies

MOSFET 800V TDSON-8

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

pacchetto: -

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MOSFET (Metal Oxide)

800 V

-

±20V

-

Surface Mount

PG-TDSON-8

8-PowerTDFN

IMT65R048M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

pacchetto: -

Azione5.913

SiCFET (Silicon Carbide)

650 V

-

18V

-

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IGOT60R070D1E8220AUMA1

Infineon Technologies

GAN HV

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-20-87
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)

pacchetto: -

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GaNFET (Gallium Nitride)

600 V

31A (Tc)

-

1.6V @ 2.6mA

-

380 pF @ 400 V

-10V

-

125W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-20-87

20-PowerSOIC (0.433", 11.00mm Width)

IQE036N08NM6SCATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

IAUC120N06S5N017ATMA1

Infineon Technologies

MOSFET N-CH 60V 120A TDSON-8-43

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-43
Package / Case: 8-PowerTDFN

pacchetto: -

Azione25.239

MOSFET (Metal Oxide)

60 V

120A (Tj)

-

3.4V @ 94µA

95.9 nC @ 10 V

6952 pF @ 30 V

±20V

-

167W (Tc)

1.7mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-43

8-PowerTDFN

IGT60R070D1E8220ATMA1

Infineon Technologies

GAN HV

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Package / Case: 8-PowerSFN

pacchetto: -

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GaNFET (Gallium Nitride)

600 V

31A (Tc)

-

1.6V @ 2.6mA

-

380 pF @ 400 V

-10V

-

125W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8-3

8-PowerSFN

IRF7420TRPBF-1

Infineon Technologies

MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: -

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MOSFET (Metal Oxide)

12 V

11.5A (Ta)

1.8V, 4.5V

900mV @ 250µA

38 nC @ 4.5 V

3529 pF @ 10 V

±8V

-

2.5W (Ta)

14mOhm @ 11.5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD85P04P4L06ATMA2	Infineon Technologies	MOSFET P-CH 40V 85A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 85A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Azione12.000	MOSFET (Metal Oxide)	40 V	85A (Tc)	4.5V, 10V	2.2V @ 150µA	104 nC @ 10 V	6580 pF @ 25 V	+5V, -16V	-	88W (Tc)	6.4mOhm @ 85A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF7478TRPBF-1	Infineon Technologies	MOSFET N-CH 60V 7A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	60 V	7A (Ta)	4.5V, 10V	3V @ 250µA	31 nC @ 4.5 V	1740 pF @ 25 V	±20V	-	2.5W (Ta)	26mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
ISZ034N06LM5ATMA1	Infineon Technologies	MOSFET N-CH 60V 19A/112A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 112A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-26 Package / Case: 8-PowerTDFN	pacchetto: -	Azione18.780	MOSFET (Metal Oxide)	60 V	19A (Ta), 112A (Tc)	4.5V, 10V	2.3V @ 36µA	53 nC @ 10 V	3500 pF @ 30 V	±20V	-	2.5W (Ta), 83W (Tc)	3.4mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-26	8-PowerTDFN
IRFC7416B	Infineon Technologies	MOSFET 30V 10A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A	10V	-	-	-	-	-	-	20mOhm @ 10A, 10V	-	Surface Mount	Die	Die
IMBG120R008M2HXTMA1	Infineon Technologies	SIC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione2.937	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB019N06L3GATMA1	Infineon Technologies	MOSFET N-CH 60V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione23.178	MOSFET (Metal Oxide)	60 V	120A (Tc)	4.5V, 10V	2.2V @ 196µA	166 nC @ 4.5 V	28000 pF @ 30 V	±20V	-	250W (Tc)	1.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW60R125C6FKSA1	Infineon Technologies	MOSFET N-CH 600V 30A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	pacchetto: -	Azione810	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	3.5V @ 960µA	96 nC @ 10 V	2127 pF @ 100 V	±20V	-	219W (Tc)	125mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IQE057N10NM6SCATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSZ0902NSATMA1	Infineon Technologies	MOSFET N-CH 30V 19A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	pacchetto: -	Azione298.989	MOSFET (Metal Oxide)	30 V	19A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	26 nC @ 10 V	1700 pF @ 15 V	±20V	-	2.1W (Ta), 48W (Tc)	2.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
AUIRL3705N	Infineon Technologies	AUIRL3705 - 55V-60V N-CHANNEL AU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	55 V	89A (Tc)	-	2V @ 250µA	98 nC @ 5 V	3600 pF @ 25 V	-	-	170W (Tc)	10mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPBE65R099CFD7AATMA1	Infineon Technologies	MOSFET N-CH 650V 24A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3-10 Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4.5V @ 630µA	53 nC @ 10 V	2513 pF @ 400 V	±20V	-	127W (Tc)	99mOhm @ 12.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-7-3-10	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
AIMZH120R160M1TXKSA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 109W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-11 Package / Case: TO-247-4	pacchetto: -	Azione150	SiC (Silicon Carbide Junction Transistor)	1200 V	17A (Tc)	18V, 20V	5.1V @ 1.5mA	14 nC @ 20 V	350 pF @ 800 V	+23V, -5V	-	109W (Tc)	200mOhm @ 5A, 20V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-11	TO-247-4
IPP070N08N3G	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 73µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	80 V	80A (Tc)	6V, 10V	3.5V @ 73µA	56 nC @ 10 V	3840 pF @ 40 V	±20V	-	136W (Tc)	7mOhm @ 73A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
ISZ0602NLSATMA1	Infineon Technologies	MOSFET N-CH 80V 12A/64A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 29µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-26 Package / Case: 8-PowerTDFN	pacchetto: -	Azione29.577	MOSFET (Metal Oxide)	80 V	12A (Ta), 64A (Tc)	4.5V, 10V	2.3V @ 29µA	29 nC @ 10 V	1860 pF @ 40 V	±20V	-	2.1W (Ta), 60W (Tc)	7.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-26	8-PowerTDFN
IAUC100N04S6N022ATMA1	Infineon Technologies	IAUC100N04S6N022ATMA1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3V @ 32µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	pacchetto: -	Azione40.569	MOSFET (Metal Oxide)	40 V	100A (Tc)	7V, 10V	3V @ 32µA	39 nC @ 10 V	2421 pF @ 25 V	±20V	-	75W (Tc)	2.26mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPP60R950C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 4.4A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4.4A (Tc)	10V	3.5V @ 130µA	13 nC @ 10 V	280 pF @ 100 V	±20V	-	37W (Tc)	950mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPD40DP06NMATMA1	Infineon Technologies	MOSFET P-CH 60V 4.3A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 166µA Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 19W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Azione6.903	MOSFET (Metal Oxide)	60 V	4.3A (Tc)	10V	4V @ 166µA	6.7 nC @ 10 V	260 pF @ 30 V	±20V	-	19W (Tc)	400mOhm @ 4.3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFHM9331TR2PBF	Infineon Technologies	MOSFET P-CH 30V 11A 3X3 PQFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (3x3) Package / Case: 8-PowerTDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta), 24A (Tc)	-	2.4V @ 25µA	48 nC @ 10 V	1543 pF @ 25 V	-	-	-	10mOhm @ 11A, 20V	-	Surface Mount	PQFN (3x3)	8-PowerTDFN
IPB055N08NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacchetto: -	Azione1.794	MOSFET (Metal Oxide)	80 V	94A (Tc)	6V, 10V	3.8V @ 55µA	54 nC @ 10 V	2500 pF @ 40 V	±20V	-	107W (Tc)	5.5mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW90R340C3FKSA1	Infineon Technologies	MOSFET N-CH 900V 15A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	900 V	15A (Tc)	10V	3.5V @ 1mA	94 nC @ 10 V	2400 pF @ 100 V	±20V	-	208W (Tc)	340mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IMYH200R075M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 2000 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.5V @ 7.7mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +20V, -7V FET Feature: - Power Dissipation (Max): 267W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 13A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-U04 Package / Case: TO-247-4	pacchetto: -	Azione267	SiC (Silicon Carbide Junction Transistor)	2000 V	34A (Tc)	15V, 18V	5.5V @ 7.7mA	64 nC @ 18 V	-	+20V, -7V	-	267W (Tc)	98mOhm @ 13A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-U04	TO-247-4
IPLK80R900P7ATMA1	Infineon Technologies	MOSFET 800V TDSON-8 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	800 V	-	-	-	-	-	±20V	-	-	-	-	Surface Mount	PG-TDSON-8	8-PowerTDFN
IMT65R048M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	pacchetto: -	Azione5.913	SiCFET (Silicon Carbide)	650 V	-	18V	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IGOT60R070D1E8220AUMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-87 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	pacchetto: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-87	20-PowerSOIC (0.433", 11.00mm Width)
IQE036N08NM6SCATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUC120N06S5N017ATMA1	Infineon Technologies	MOSFET N-CH 60V 120A TDSON-8-43 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.4V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-43 Package / Case: 8-PowerTDFN	pacchetto: -	Azione25.239	MOSFET (Metal Oxide)	60 V	120A (Tj)	-	3.4V @ 94µA	95.9 nC @ 10 V	6952 pF @ 30 V	±20V	-	167W (Tc)	1.7mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-43	8-PowerTDFN
IGT60R070D1E8220ATMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	pacchetto: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IRF7420TRPBF-1	Infineon Technologies	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	12 V	11.5A (Ta)	1.8V, 4.5V	900mV @ 250µA	38 nC @ 4.5 V	3529 pF @ 10 V	±8V	-	2.5W (Ta)	14mOhm @ 11.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)